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High temperature aging device for microwave transistor

A technology of transistors and microwaves, which is applied in the field of split-type microwave transistor high-temperature aging devices, which can solve the problems of materials unable to withstand high temperatures and accelerated life tests of aging devices.

Active Publication Date: 2013-07-10
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The device is only suitable for room temperature aging due to the integration of plastic molds, epoxy boards and components, and these materials cannot withstand high temperatures.
Therefore, the burn-in unit becomes the bottleneck of the accelerated life test

Method used

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  • High temperature aging device for microwave transistor

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Experimental program
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Embodiment Construction

[0018] A microwave transistor high-temperature aging device, which is characterized in that it comprises an aluminum housing 1, a lower ceramic substrate 2, two L-shaped copper pillars 3, and an upper ceramic substrate 4; Toward the anti-self-excitation groove 5; the front wall of the aluminum housing 1 is provided with two square holes 6 that fit the L-shaped copper pillar 3; a thread is provided between the two square holes 6 Hole 7; On the inner bottom surface of the aluminum housing is provided with an upwardly protruding support 8 of the same size as the base of the microwave triode;

[0019] The upper surface of the lower ceramic substrate 2 is provided with two L-shaped first grooves 11 corresponding to the two L-shaped copper pillars 3; the position between the short arms of the first groove 11 is set There is a first fixing hole 10 adapted to the support 8;

[0020] The lower surface of the upper ceramic substrate 4 is provided with a second groove 11 and a second fixing ...

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Abstract

The invention discloses a high temperature aging device for a microwave transistor. The high temperature aging device comprises an aluminum shell, a lower ceramic substrate, two L-shaped copper columns and an upper ceramic substrate, wherein the upper ceramic substrate, the two L-shaped copper columns and the lower ceramic substrate are put into the aluminum shell sequentially from top to bottom;the two L-shaped copper columns are arranged in a groove between the upper ceramic substrate and the lower ceramic substrate; and two long arms of the two L-shaped copper columns extend out of two square holes in the front wall of the aluminum shell respectively and are used as transistor lead-out electrodes. In the whole design, all adopted materials have high temperature resistance; a high temperature lead wire is connected with a peripheral circuit, so a circuit board can be prevented from being heated; therefore, a high acceleration life test at temperature of over 400 DEG C can be realized.

Description

Technical field [0001] The invention relates to a high-temperature aging device for electronic devices, in particular to a high-temperature aging device for a split microwave transistor. Background technique [0002] Accelerated life test is to use the method of increasing stress to accelerate the aging of the product without changing the failure mechanism of the product, so as to obtain the failure information of the product in a short time, and then predict its life characteristics under normal stress. It is a fast calculation product Effective means of long-term service life and reliability evaluation. [0003] Microwave transistors are more sensitive to temperature stress, and generally use an accelerated life test with temperature as the main stress. The rated junction temperature of silicon devices is 175°C, and the step stress test in the accelerated life test can increase the junction temperature to 400°C, and the corresponding case temperature also exceeds 300°C. Therefor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
Inventor 彭浩黄杰童亮张艳杰高金环
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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