High temperature aging device for microwave transistor

A technology of transistors and microwaves, which is applied in the field of split-type microwave transistor high-temperature aging devices, which can solve the problems of materials unable to withstand high temperatures and accelerated life tests of aging devices.
CN102353883BActive Publication Date: 2013-07-10THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
Publication Date
2013-07-10

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Abstract

The invention discloses a high temperature aging device for a microwave transistor. The high temperature aging device comprises an aluminum shell, a lower ceramic substrate, two L-shaped copper columns and an upper ceramic substrate, wherein the upper ceramic substrate, the two L-shaped copper columns and the lower ceramic substrate are put into the aluminum shell sequentially from top to bottom;the two L-shaped copper columns are arranged in a groove between the upper ceramic substrate and the lower ceramic substrate; and two long arms of the two L-shaped copper columns extend out of two square holes in the front wall of the aluminum shell respectively and are used as transistor lead-out electrodes. In the whole design, all adopted materials have high temperature resistance; a high temperature lead wire is connected with a peripheral circuit, so a circuit board can be prevented from being heated; therefore, a high acceleration life test at temperature of over 400 DEG C can be realized.
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Description

Technical field

[0001] The invention relates to a high-temperature aging device for electronic devices, in particular to a high-temperature aging device for a split microwave transistor. Background technique

[0002] Accelerated life test is to use the method of increasing stress to accelerate the aging of the product without changing the failure mechanism of the product, so as to obtain the failure information of the product in a short time, and then predict its life characteristics under normal stress. It is a fast calculation product Effective means of long-term service life and reliability evaluation.

[0003] Microwave transistors are more sensitive to temperature stress, and generally use an accelerated life test with temperature as the main stress. The rated junction temperature of silicon devices is 175°C, and the step stress test in the accelerated life test can increase the junction temperature to 400°C, and the corresponding case temperature also exceeds 300°C. Therefor...

Claims

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