Method for testing single event effect cross section of device by changing depth of heavy ion Bragg peak

Abstract

The invention discloses a method for testing the single event effect cross section of a device by changing the depth of a heavy ion Bragg peak. The method comprises: calculating the equivalent depth of an energy-reducing sheet material per unit depth in silicon at the same energy loss; according to a certain step length, removing an energy-reducing sheet placed in front of the device in order thatthe Bragg peak gradually shifts to the sensitive area of the device, and a LET value and the single event effect cross section reach maximum values; continuously removing the energy-reducing sheet according to the set step length, based on the changing curve of the LET value of heavy ions with penetration depth in the silicon, reading the corresponding LET value at the sensitive area of the device; and drawing a relation curve between the single event effect cross section and the LET value at the heavy ions. The method acquires the single event effect cross section of new devices such as encapsulation devices and backside thinning devices, compensates for the influence caused by the low energy and insufficient range of a heavy ion accelerator, and can accurately obtain the device's singleevent effect threshold through testing, and is an effect test method for accurate evaluation of the device's ability to resist single event.

Description

technical field [0001] The invention relates to a method for changing the single-event effect cross-section of a heavy ion Bragg peak depth test device, and belongs to the research field of space single-event effect simulation test technology and reinforcement technology. Background technique [0002] In the space radiation environment, heavy ions and protons cause single event effects in the semiconductor devices in the spacecraft electronic system, seriously affecting the reliability of the spacecraft in orbit. The most commonly used method for simulating single event effects on the ground is to irradiate semiconductor devices with heavy ions generated by accelerators, obtain and fit the relationship curve between device single event effect cross section and LET value, and extract important parameters such as single event effect threshold and saturation cross section. In order to evaluate the anti-single event capability of the device. [0003] Among ground-based heavy io...

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