Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A compact artificial surface plasmon transmission line

An artificial surface plasmon and transmission line technology, applied in the direction of electrical components, waveguide devices, waveguides, etc., can solve the problems of increasing the line width of the transmission line, increasing the groove depth of the artificial surface plasmon transmission line, and reducing the line width , Change the field restraint characteristics, change the effect of transmission ability

Active Publication Date: 2021-01-26
SOUTHEAST UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to obtain a stronger binding ability, it is necessary to increase the groove depth of the artificial surface plasmon transmission line, resulting in a larger line width of the entire transmission line

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A compact artificial surface plasmon transmission line
  • A compact artificial surface plasmon transmission line
  • A compact artificial surface plasmon transmission line

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The technical solution of the present invention will be further introduced below in combination with specific implementation methods and accompanying drawings.

[0017] This specific embodiment discloses a compact artificial surface plasmon transmission line, such as figure 1 , figure 2 with image 3 As shown, the dielectric substrate 1 is included, and the top layer of the dielectric substrate 1 is provided with a sawtooth-shaped artificial surface plasmon transmission structure 2, and the groove of the sawtooth 8 of the artificial surface plasmon transmission structure 2 is provided with a vertical connection groove at one end. The top metal strip 4 on the side wall of the groove, the other end of the top metal strip 4 is suspended in the air, and the two ends of the artificial surface plasmon transmission structure 2 are provided with a transition structure 3 from the coplanar waveguide to the artificial surface plasmon transmission structure 2 , the bottom layer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a compact type artificial surface plasmon transmission line which comprises a dielectric substrate. A top layer of the dielectric substrate is provided with a sawtooth artificial surface plasmon transmission structure, top-layer metal strips are arranged in grooves of sawteeth of the artificial surface plasmon transmission structure, one end of each top-layer metal strip isconnected with the side walls of the corresponding groove, the other end of each top-layer metal strip is suspended, transition structures for coplanar waveguide to the artificial surface plasmon transmission structure are arranged at two ends of the artificial surface plasmon transmission structure, a bottom layer of the dielectric substrate is provided with a bottom-layer metal strip, the bottom-layer metal strip is connected with the artificial surface plasmon transmission structure and comprises a plurality of separated strip sections, the quantity of the top-layer metal strips is equal to that of the strip sections, and each top-layer metal strip partially directly faces the corresponding single strip section. The compact type artificial surface plasmon transmission line has the advantages that the line width of the compact type artificial surface plasmon transmission line can be diminished, and the electric field binding capability and transmission characteristics of the compacttype artificial surface plasmon transmission line can keep unchanged.

Description

technical field [0001] The invention relates to the field of microwave transmission lines, in particular to a compact artificial surface plasmon transmission line. Background technique [0002] The dispersion characteristics of artificial surface plasmon transmission lines are mainly determined by the geometric dimensions of its periodic units, including slot width, slot depth, and unit period. Among them, the groove depth has the greatest influence on the dispersion characteristics. The deeper the groove, the greater the degree of downward bending of the dispersion curve, the lower the cut-off frequency, and the stronger the binding ability of the artificial surface plasmon transmission line to the electric field. This feature plays a big role in reducing crosstalk between transmission lines. However, in order to obtain a stronger binding ability, it is necessary to increase the groove depth of the artificial surface plasmon transmission line, resulting in a larger line w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01P3/00
CPCH01P3/006
Inventor 胡三明石子豪
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com