integrated circuit structure

An integrated circuit, electrical connection technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as output voltage offset of operational amplifiers, and achieve the effect of reducing possibility, improving spatial symmetry, and uniformizing the impact

Active Publication Date: 2020-09-08
AIROHA TECHNOLOGY CORPORATION
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the characteristics of operational amplifiers are often affected by the semiconductor process flow, causing the output voltage of the operational amplifier to shift, which is quite unfavorable for circuit designers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • integrated circuit structure
  • integrated circuit structure
  • integrated circuit structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] In order to have a better understanding of the above-mentioned and other aspects of the present invention, the preferred embodiments are specifically cited below, together with the accompanying drawings, and are described in detail as follows:

[0038] The following examples are provided for detailed description, and the examples are only used as illustrations, and are not intended to limit the scope of protection of the present invention.

[0039] Herein, some embodiments of the present invention are described in detail with reference to the accompanying drawings, but not all embodiments are shown in the drawings. Indeed, these inventions can use many different variations and are not limited to the examples herein. Rather, the present invention provides these embodiments to meet the statutory requirements of the application. The same reference symbols are used in the drawings to designate the same or similar elements.

[0040] figure 1 is a schematic cross-sectional...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An integrated circuit structure includes an active area, a first top metal pattern, a second top metal pattern, a stack of first metal patterns, a stack of second metal patterns, a first transistor and a second transistor The active area is formed on a substrate The first top metal pattern electrically connects to the active region. The second top metal pattern electrically connects to the activeregion, and formed on the same metal layer as the first top metal pattern. The stack of first metal patterns includes M layers of first metal patterns. The stack of second metal patterns includes M layers of second metal patterns. The first transistor is formed on the substrate and electrically connects to the active area through the stack of first metal patterns which is eclectically connected tothe first top metal pattern The second transistor is disposed nearby the first transistor and electrically connects to the active area through the stack of second metal patterns which is eclecticallyconnected to the second top metal pattern.

Description

technical field [0001] The invention relates to the fields of integrated circuit structure and the like. Specifically, the invention provides an integrated circuit structure that can effectively reduce the influence of semiconductor process flow on the characteristics of electronic components. Background technique [0002] As the size of integrated circuits shrinks, the influence of semiconductor process flow on the characteristics of electronic components becomes more and more obvious. [0003] For example, bandgap voltage is an important source of reference voltage for integrated circuits. The bandgap voltage can be provided by a typical bandgap reference circuit, which usually includes an operational amplifier. However, the characteristics of the operational amplifier are often affected by the semiconductor process flow, causing the output voltage of the operational amplifier to shift, which is quite unfavorable for circuit designers. [0004] Therefore, how to propose ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L23/528
CPCH01L23/528
Inventor邱子寰
OwnerAIROHA TECHNOLOGY CORPORATION