Realization method of 27 three-valued single-variable functions based on single resistive variable device
A technology of resistive devices and implementation methods, applied in the fields of instruments, static memory, digital memory information, etc., can solve the problems of slow switching speed, large circuit area, low storage capacity, etc., to reduce circuit power consumption, optimize circuit structure, The effect of simplifying the operation method
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[0081] Embodiment: A method for realizing 27 kinds of ternary univariate functions based on a single resistive variable device, 27 kinds of ternary univariate functions are respectively denoted as f 0 , f 1 , f 2 , f 3 , f 4 , f 5 , f 6 , f 7 , f 8 , f 9 , f 10 , f 11 , f 12 , f 13 , f 14 , f 15 , f 16 , f 17 , f 18 , f 19 , f 20 , f 21 , f 22 , f 23 , f 24 , f 25 , f 26 ,in f 0 ={0,0,0}, f 1 ={0,0,1}, f 2 ={0,0,2}, f 3 ={0,1,0}, f 4 ={0,1,1}, f 5 ={0,1,2}, f 6 ={0,2,0}, f 7 ={0,2,1}, f 8 ={0,2,2}, f 9 ={1,0,0}, f 10 ={1,0,1}, f 11 ={1,0,2}, f 12 ={1,1,0}, f 13 ={1,1,1}, f 14 ={1,1,2}, f 15 ={1,2,0}, f 16 ={1,2,1}, f 17 ={1,2,2}, f 18 ={2,0,0}, f 19 ={2,0,1}, f 20 ={2,0,2}, f 21 ={2,1,0}, f 22 ={2,1,1}, f 23 ={2,1,2}, f 24 ={2,2,0}, f 25 ={2,2,1}, f 26 ={2,2,2}, including the following steps:
[0082] (1) Select memristors with electroresistance transition, non-volatility a...
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