The invention provides a low-power-consumption magnetic multi-resistance-state
memory cell. The low-power-consumption magnetic multi-resistance-state
memory cell successively comprises an anti-ferromagnetic strip film, a first ferromagnetic
metal, a first
oxide, a second ferromagnetic
metal, a first synthetic anti-ferromagnetic layer and a first
electrode from bottom to top. The thickness of the anti-ferromagnetic strip film is 0-20 nm. The thickness of the first ferromagnetic
metal is 0-3 nm. The thickness of the first
oxide is 0-2 nm. The thickness of the second ferromagnetic metal is 0-3 nm. The thickness of the first synthetic anti-ferromagnetic layer is 0-20 nm. The thickness of the first
electrode is 10-200 nm. The two ends of the anti-ferromagnetic strip film are respectively plated with a second
electrode and a third electrode. Five
layers of materials arranged above the anti-ferromagnetic strip film form material magnetic tunnel junctions. According to the technical scheme of the invention, the multi-resistance-state storage can be realized. The low-power-consumption magnetic multi-resistance-state
memory cell can be applied not only to the fields of single-bit memory and logic operation, but also the fields of brain-like calculation and the like. Data are written by adopting a unidirectional current, so that the design of memories and logic circuits is simplified. The integration level of circuits is improved and the
power consumption of the memory
cell is reduced. The
process complexity and the manufacturing cost are reduced. Moreover, data are written by using different branches, so that the write operations of different data are independently optimized and designed.