Low-power-consumption magnetic storage unit

A magnetic storage and storage unit technology, applied in the field of non-volatile storage and logic, to achieve the effect of simplifying design, reducing power consumption, reducing complexity and manufacturing cost

Active Publication Date: 2017-02-22
致真存储(北京)科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] Aiming at the difficulties of circuit design, control complexity, chip area, manufacturing process and cost faced by the magnetic tunnel junction writing technology mentioned in the above background, the present invention proposes a low-power magnetic storage unit, which uses a single Writing data to the current simplifies the design and control of the writing circuit, improves circuit integration and reduces process manufacturing costs

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Embodiment Construction

[0078] The substantive features of the present invention are further described with reference to the accompanying drawings. The drawings are all schematic diagrams, and the thicknesses of the various functional layers or regions involved are not actual dimensions, and the resistance and current values ​​in the working mode are also not actual values.

[0079] Detailed exemplary embodiments are disclosed herein, specific structural and functional details are merely representative for purposes of describing exemplary embodiments, therefore, the invention may be embodied in many alternative forms and should not be construed as It is to be construed as being limited only to the exemplary embodiments set forth herein, but to cover all changes, equivalents, and alternatives falling within the scope of the invention.

[0080] The invention proposes a low power consumption magnetic storage unit, which can be used not only for constructing a magnetic random access memory, but also for ...

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Abstract

The invention discloses a low-power-consumption magnetic storage unit which consists of six layers from bottom to top, that is, a heavy metal stripy film of 0-20nm thick, a first ferromagnetic metal layer of 0-3nm thick, a first oxide layer of 0-2nm thick, a second ferromagnetic metal layer of 0-3nm thick, a first synthesized antiferromagnetic layer of 0-20nm thick and a first electrode of 10-20nm thick, wherein two ends of the heavy metal stripy film are respectively plated with a second electrode and a third electrode; the five layers of substances above the heavy metal stripy film form magnetic tunnel junctions. According to the low-power-consumption magnetic storage unit, data can be written through one-way current, so that design of a memory and a logic circuit can be simplified, the circuit integration degree is increased, the power consumption of the storage unit is reduced, and the complexity and the manufacturing cost of processes can be reduced; as data are written through different branches, writing operation of different data can be independently optimized and designed conveniently.

Description

[0001] 【Technical field】 [0002] The invention relates to a low power consumption magnetic storage unit, which belongs to the technical field of nonvolatile storage and logic. [0003] 【Background technique】 [0004] Emerging non-volatile memory technology can keep stored data from being lost when power is turned off, so it is expected to solve the increasingly severe static problems faced by traditional memory and logic circuits based on complementary metal-oxide semiconductor (Complementary metal-oxide semiconductor, CMOS) technology. power consumption problem. Among them, Magnetic Random Access Memory (MRAM) based on Magnetic Tunnel Junction (Magnetic Tunnel Junction, MTJ) has been proved to be the The most potential general-purpose memory. It is not only expected to replace traditional SRAM (Static random access memory, SRAM) and dynamic random access memory (Dynamic random access memory, DRAM), but also can be applied to the design of non-volatile logic circuits. At pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08
CPCH10N50/10
Inventor 王昭昊赵巍胜林晓阳粟傈张磊
Owner 致真存储(北京)科技有限公司
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