Low-power-consumption magnetic storage unit

Abstract

The invention discloses a low-power-consumption magnetic storage unit which consists of six layers from bottom to top, that is, a heavy metal stripy film of 0-20nm thick, a first ferromagnetic metal layer of 0-3nm thick, a first oxide layer of 0-2nm thick, a second ferromagnetic metal layer of 0-3nm thick, a first synthesized antiferromagnetic layer of 0-20nm thick and a first electrode of 10-20nm thick, wherein two ends of the heavy metal stripy film are respectively plated with a second electrode and a third electrode; the five layers of substances above the heavy metal stripy film form magnetic tunnel junctions. According to the low-power-consumption magnetic storage unit, data can be written through one-way current, so that design of a memory and a logic circuit can be simplified, the circuit integration degree is increased, the power consumption of the storage unit is reduced, and the complexity and the manufacturing cost of processes can be reduced; as data are written through different branches, writing operation of different data can be independently optimized and designed conveniently.

Description

[0001] 【Technical field】 [0002] The invention relates to a low power consumption magnetic storage unit, which belongs to the technical field of nonvolatile storage and logic. [0003] 【Background technique】 [0004] Emerging non-volatile memory technology can keep stored data from being lost when power is turned off, so it is expected to solve the increasingly severe static problems faced by traditional memory and logic circuits based on complementary metal-oxide semiconductor (Complementary metal-oxide semiconductor, CMOS) technology. power consumption problem. Among them, Magnetic Random Access Memory (MRAM) based on Magnetic Tunnel Junction (Magnetic Tunnel Junction, MTJ) has been proved to be the The most potential general-purpose memory. It is not only expected to replace traditional SRAM (Static random access memory, SRAM) and dynamic random access memory (Dynamic random access memory, DRAM), but also can be applied to the design of non-volatile logic circuits. At pr...

AI Technical Summary

Problems solved by technology

[0009] Aiming at the difficulties of circuit design, control complexity, chip area, manufacturing process and cost faced by the magnetic tunnel junction writing technology mentioned in the above background, the present invention proposes a low-power magnetic storage unit, which uses a single Writing data to the current simplifies the design and control of the writing circuit, improves circuit integration and reduces process manufacturing costs

Images