Pixel circuit, driving method thereof and display device
A pixel circuit and circuit technology, applied in the field of pixel circuits and their driving methods and display devices, can solve the problems of inability to achieve high contrast, reduce the cross-voltage of light-emitting elements, etc., and achieve the effects of reducing luminous brightness, improving contrast, and obvious dark state
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2019-11-15
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Abstract
Description
technical field
[0001] The present invention relates to the field of display technology, in particular to a pixel circuit, a driving method thereof, and a display device. Background technique
[0002] Silicon-based OLED (Organic Light-Emitting Diode, Organic Light-Emitting Diode) microdisplays are at the intersection of microelectronics technology and optoelectronics technology, and need to achieve high contrast in certain cases. The existing pixel circuit cannot effectively guarantee to reduce the cross-voltage of the light-emitting element under the limitation of a specific low-voltage Mos (Metal-oxide-semiconductor, metal-oxide-semiconductor) process, so that high contrast cannot be achieved. Contents of the invention
[0003] The main purpose of the present invention is to provide a pixel circuit and its driving method and display device, which can solve the limitation that the existing pixel circuit cannot effectively guarantee the specific low-voltage Mos (Metal-oxid...
Examples
Embodiment Construction
[0051] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0052] The transistors used in all the embodiments of the present invention can be thin film transistors or field effect transistors or other devices with the same characteristics. In the embodiment of the present invention, in order to distinguish the two poles of the transistor except the gate, one pole is called the first pole, and the other pole is called the second pole. In actual operation, the first electrode may be a drain, and the second electrode may...