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A non-volatile memory processing circuit and method

A technology of non-volatile memory and processing circuit, which is applied in the field of memory processing, and can solve the problems of low reading accuracy of storage unit data and errors in reading storage unit data.

Active Publication Date: 2021-10-08
GIGADEVICE SEMICON XIAN INC +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the process of researching the above technical solutions, the inventors found that the above technical solutions have the following defects: the conduction thresholds of the storage cells in each non-volatile memory are usually different, and the solutions of the prior art will have different conduction thresholds The source of the storage unit is grounded, which will cause some storage unit data reading errors, and the accuracy of the storage unit data reading is not high

Method used

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  • A non-volatile memory processing circuit and method
  • A non-volatile memory processing circuit and method
  • A non-volatile memory processing circuit and method

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Embodiment 1

[0058] refer to figure 1 , shows a non-volatile memory processing circuit, which may specifically include: a charging circuit 300 , a comparison circuit 400 , and a storage unit selection circuit 200 .

[0059]The charging circuit 300 is connected to the storage unit selection circuit 200 for initially charging the storage unit selection circuit 200; the charging circuit 300 is connected to the comparison circuit 400 for when the After the storage unit selection circuit 200 is charged stably, the comparison circuit 400 is charged, and, when the comparison circuit 400 is charged stably, the charging of the comparison circuit 400 and the storage unit selection circuit 200 is ended; The storage unit selection circuit 200 forms a current loop with the comparison circuit 400 through the charging circuit 300, so that the comparison circuit 400 outputs a high level or a low level according to the current loop; the output of the comparison circuit 400 terminal as the output terminal ...

Embodiment 2

[0077] refer to Figure 4 , which shows a non-volatile memory processing method, which is applied to any of the above-mentioned non-volatile memory processing circuits, and may specifically include:

[0078] Step 401: Determine a memory cell to be detected in the memory cell selection circuit; wherein, the source line voltage in the memory cell selection circuit is set to a preset voltage.

[0079] In the embodiment of the present invention, the storage unit selection circuit can select the storage unit to be detected, and according to the difference in the threshold voltage of the storage unit to be detected, the corresponding source line voltage SL can be set in the storage unit selection circuit.

[0080] In a specific application, when using current or voltage detection method to read the stored value of the memory cell, when WLn-G-WLn-S>VTcell (threshold voltage of the memory cell), the memory cell can be turned on, and there is a current It can flow, and as the value of...

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Abstract

An embodiment of the present invention provides a non-volatile memory processing circuit and method, the method comprising: a charging circuit connected to a storage unit selection circuit for initially charging the storage unit selection circuit; the charging circuit connected to a comparison circuit , used to charge the comparison circuit when the storage unit selection circuit is charged stably, and end the charging of the comparison circuit and the storage unit selection circuit when the comparison circuit is charged stably; the storage unit selection circuit is connected to the comparison circuit through the charging circuit A current loop is formed so that the comparison circuit outputs a high level or a low level according to the current loop. In the embodiment of the present invention, the current flowing through the storage unit can be accurately controlled by setting a preset voltage on the source line, so when the storage unit in the non-volatile memory is read, each storage unit can be accurately read The data.

Description

technical field [0001] The invention relates to the technical field of memory processing, in particular to a nonvolatile memory processing circuit and method. Background technique [0002] With the development of various electronic devices and embedded systems, non-volatile memory devices are widely used in electronic products. Taking the non-volatile memory NAND flash memory (NAND Flash Memory) as an example, the NAND memory is composed of a plurality of storage cells (cells), and the storage cells can be negative threshold storage cells, that is, the storage cells whose conduction threshold voltage is a negative value; It can be a positive threshold memory cell, that is, a memory cell whose on-threshold voltage is positive; according to the on-current of the memory cell during operation, the data state of the memory cell can be read, such as erased state, programmed state, etc. [0003] In the prior art, when reading data from each storage unit of a non-volatile memory, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/30
CPCG11C16/30
Inventor 马思博贾少旭舒清明
Owner GIGADEVICE SEMICON XIAN INC
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