A kind of etching control method and control device before CVD synthetic diamond growth

Abstract

The invention relates to an etching control method and a control device before the growth of CVD synthetic diamond. A method for controlling etching before the growth of CVD synthetic diamond, comprising the steps of: S1, putting the diamond seed crystal into the etching chamber, and performing the etching operation; S2, monitoring and obtaining the plasma above the seed crystal in real time by a spectrum detector according to a predetermined detection method The spectral data; S3, the spectral detector sends the spectral data to the controller; S4, the controller detects whether there is target data, if yes, the etching is completed; if not, then execute step S2. The etching control method before the growth of CVD synthetic diamond provided by the present invention can obtain the relationship between spectral peak intensity and time by observing the plasma parameters in the etching process, accurately control the etching time, and avoid inefficient production activities. Improved product quality.

Description

technical field [0001] The invention relates to the field of diamond production, in particular to an etching control method and a control device before growth of CVD synthetic diamond. Background technique [0002] Due to its excellent physical and chemical properties, diamond can be used in drill bits, semiconductors, non-metal cutting and other applications, and has excellent performance. However, natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure method, hot wire chemical vapor deposition method, etc. Among them, the microwave plasma chemical vapor deposition method (Microwave plasmachemical vapor deposition, MPCVD) synthetic diamond method has no The introduction of impurities can synthesize high-quality, large-area diamonds, which are widely used. [0003] The quality of diamond synthesized by MPCVD is related to many factors, including carbon source concentration, gas flow r...

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Problems solved by technology

[0005] The patent document with the application number 201611130191.9 discloses a method for preparing diamond particles by plasma etching graphite, but there is no corresponding method for selecting the etching end point and the corresponding device for selecting the etching end point, which makes the equipment unable to grasp the details of the etching process. time, and a lot of manpower is needed to observe with the naked eye to determine the end point of etching, which wastes a lot of manpower

However, the control of the etching degree and etching time before diamond growth by the CVD method is often judged by the experience of the operator, which greatly depends on the experience of the technician, and there is unreliability.

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