Control method and control device for etching before CVD synthetic diamond growth

Abstract

The invention relates to a control method and control device for etching before CVD synthetic diamond growth. The control method for the etching before CVD synthetic diamond growth includes the following steps: S1, putting diamond seed crystals into an etching chamber, and performing etching operation; S2, performing monitoring in real time by using a spectrum detector according to a predetermineddetection manner to obtain spectrum data of plasma above the seed crystals; S3, transmitting the spectrum data to a controller through the spectrum detector; and S4, detecting whether target data exist by using the controller, if yes, completing the etching; and if not, performing the S2. According to the control method for the etching before CVD synthetic diamond growth provided by the invention, plasma parameters in the etching process are observed, so that the relationship between spectral peak intensity and time can be obtained, the etching time can be accurately controlled, inefficient production activities can be avoided, and the product quality is improved.

Description

technical field [0001] The invention relates to the field of diamond production, in particular to an etching control method and a control device before growth of CVD synthetic diamond. Background technique [0002] Due to its excellent physical and chemical properties, diamond can be used in drill bits, semiconductors, non-metal cutting and other applications, and has excellent performance. However, natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure method, hot wire chemical vapor deposition method, etc. Among them, the microwave plasma chemical vapor deposition method (Microwave plasmachemical vapor deposition, MPCVD) synthetic diamond method has no The introduction of impurities can synthesize high-quality, large-area diamonds, which are widely used. [0003] The quality of diamond synthesized by MPCVD is related to many factors, including carbon source concentration, gas flow r...

AI Technical Summary

Problems solved by technology

[0005] The patent document with the application number 201611130191.9 discloses a method for preparing diamond particles by plasma etching graphite, but there is no corresponding method for selecting the etching end point and the corresponding device for selecting the etching end point, which makes the equipment unable to grasp the details of the etching process. time, and a lot of manpower is needed to observe with the naked eye to determine the end point of etching, which wastes a lot of manpower

However, the control of the etching degree and etching time before diamond growth by the CVD method is often judged by the experience of the operator, which greatly depends on the experience of the technician, and there is unreliability.

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