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Control method and control device for etching before CVD synthetic diamond growth

A technology of synthetic diamond and control method, which is applied in the field of etching control method and control device before the growth of CVD synthetic diamond, which can solve the problems of wasting manpower, unreliability, and equipment can not grasp the specific time of etching, so as to save time and cost , improve quality, and avoid inefficient production activities

Active Publication Date: 2020-02-04
航天科工(长沙)新材料研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The patent document with the application number 201611130191.9 discloses a method for preparing diamond particles by plasma etching graphite, but there is no corresponding method for selecting the etching end point and the corresponding device for selecting the etching end point, which makes the equipment unable to grasp the details of the etching process. time, and a lot of manpower is needed to observe with the naked eye to determine the end point of etching, which wastes a lot of manpower
However, the control of the etching degree and etching time before diamond growth by the CVD method is often judged by the experience of the operator, which greatly depends on the experience of the technician, and there is unreliability.

Method used

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  • Control method and control device for etching before CVD synthetic diamond growth
  • Control method and control device for etching before CVD synthetic diamond growth

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Embodiment 1

[0035] Please focus on figure 1 , the present invention provides a method for controlling etching before the growth of CVD synthetic diamond, comprising the steps of:

[0036] S1. Put the diamond seed crystal into the etching chamber for etching operation;

[0037] S2. The spectral detector obtains the spectral data of the plasma above the seed crystal by real-time monitoring according to a predetermined detection method;

[0038] S3. The spectrum detector sends the spectrum data to the controller;

[0039] S4. The controller detects whether there is target data, if yes, the etching is completed; if not, execute step S2.

[0040] Specifically, the etching chamber may be an etching chamber specially used for etching the surface of the diamond seed crystal, or a synthesis chamber for synthesizing diamond. When using the synthesis chamber, after determining the etching end point , that is, after the etching is completed, the normal diamond growth step can be started. The etch...

Embodiment 2

[0060] see figure 2 , a CVD synthetic diamond pre-growth etching control method applying the CVD synthetic diamond pre-growth etching device, comprising: a spectrum detection 1 and a controller 2;

[0061] The spectral detector 1 is used to detect the spectral data of the plasma above the seed crystal obtained during the etching process of the diamond seed crystal, and transmit the spectral data to the controller; the spectral detector 1 is preferably a plasma emission spectrometer.

[0062] The controller 2 is configured to integrate the electronic data and detect whether there is target data.

[0063] Specifically, as a preferred solution, the controller has a memory, and the memory stores the target data;

[0064] The target data is a change in the detected target spectral position exceeding a predetermined difference;

[0065] The target spectral position includes: a carbon atom peak at 437nm or 493nm, and a carbon molecule peak at 558nm.

[0066] Specifically, as a p...

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PUM

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Abstract

The invention relates to a control method and control device for etching before CVD synthetic diamond growth. The control method for the etching before CVD synthetic diamond growth includes the following steps: S1, putting diamond seed crystals into an etching chamber, and performing etching operation; S2, performing monitoring in real time by using a spectrum detector according to a predetermineddetection manner to obtain spectrum data of plasma above the seed crystals; S3, transmitting the spectrum data to a controller through the spectrum detector; and S4, detecting whether target data exist by using the controller, if yes, completing the etching; and if not, performing the S2. According to the control method for the etching before CVD synthetic diamond growth provided by the invention, plasma parameters in the etching process are observed, so that the relationship between spectral peak intensity and time can be obtained, the etching time can be accurately controlled, inefficient production activities can be avoided, and the product quality is improved.

Description

technical field [0001] The invention relates to the field of diamond production, in particular to an etching control method and a control device before growth of CVD synthetic diamond. Background technique [0002] Due to its excellent physical and chemical properties, diamond can be used in drill bits, semiconductors, non-metal cutting and other applications, and has excellent performance. However, natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure method, hot wire chemical vapor deposition method, etc. Among them, the microwave plasma chemical vapor deposition method (Microwave plasmachemical vapor deposition, MPCVD) synthetic diamond method has no The introduction of impurities can synthesize high-quality, large-area diamonds, which are widely used. [0003] The quality of diamond synthesized by MPCVD is related to many factors, including carbon source concentration, gas flow r...

Claims

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Application Information

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IPC IPC(8): C30B25/00C30B29/04C01B32/26
CPCC30B25/00C30B29/04C01B32/26
Inventor 彭国令黄翀
Owner 航天科工(长沙)新材料研究院有限公司
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