A capacitively coupled plasma discharge device

A plasma and discharge device technology, applied in the field of plasma discharge devices, can solve problems such as poor plasma axial symmetry, and achieve the effect of ensuring axial symmetry
CN111586957BActive Publication Date: 2021-05-04DALIAN UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
DALIAN UNIV OF TECH
Publication Date
2021-05-04

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Abstract

The invention discloses a capacitive coupling plasma discharge device. The plasma discharge device comprises: a vacuum chamber, an upper plate electrode and a lower plate electrode located in the vacuum chamber, and insulating rings stacked between the upper plate electrode and the lower plate electrode; each insulating ring is connected to the adjacent There is a gap between the insulating rings; the uppermost insulating ring in the stacked insulating rings is in contact with the lower surface of the upper plate electrode, and the lowermost insulating ring is in contact with the upper surface of the lower plate electrode; the upper plate electrode is connected with the first The discharge drive rod, the first discharge drive rod extends outside the vacuum chamber; the lower plate electrode is connected with the second discharge drive rod, and the second discharge drive rod extends outside the vacuum chamber. Adopting the plasma discharge device of the invention can ensure the axial symmetry of the plasma during the experiment.
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Description

Technical field

[0001] The present invention relates to the field of plasma discharge, and more particularly to a capacitive coupling plasma discharge device.Background technique

[0002] Contentively coupled plasma (CCP) sources can generate large area, uniform plasma characteristics due to its simplicity, and can be widely used in material etching and deposition industries. The capacitive coupling (parallel plate electrode structure) plasma source is a closed system, which has no diagnostic (increasing the diagnostic window to destroy the state of the plasma, affecting the material etching or deposition quality). In order to optimize plasma etching or deposition processes, a multi-directional experimental diagnosis and computer simulation study on plasma sources are required. This requires reasonable design of the laboratory medium ionic source. In addition, if you want to perform one-dimensional computer simulation on the actual plasma source, the plasma between the parallel plates is ...

Claims

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