Capacitor formed on a recrystallized polysilicon layer and a method of manufacture therefor

Inactive Publication Date: 2005-05-26
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One such drawback stems from the difficulty in forming substantially planar first, or lower electrodes.
Specifically, the first, or lower electrodes, presently have varying and unpredictable amounts of roughness.
This unfortunately, causes the capacitors to have varying and unpredictable amounts of capacitance, as a result of the increased or decreased surface area of the first, or lower electrode.
It has been observed that the varying and unpredictable amounts of roughness are particularly evident when the first, or lower electrode, is formed over a polysilicon substrate.
Unfortunately, these capacitors are often formed directly on the polysilicon gate of the underlying transistor, which exaggerates this problem.

Method used

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  • Capacitor formed on a recrystallized polysilicon layer and a method of manufacture therefor
  • Capacitor formed on a recrystallized polysilicon layer and a method of manufacture therefor
  • Capacitor formed on a recrystallized polysilicon layer and a method of manufacture therefor

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Embodiment Construction

[0027] Referring initially to FIG. 1A, illustrated is a cross-sectional view of one embodiment of a semiconductor device 100 constructed according to the principles of the present invention. In the embodiment illustrated in FIG. 1A, the semiconductor device 100 includes a substrate 110. Located within the substrate 110 in the embodiment of FIG. 1A is a well region 120. Additionally, located over the substrate 110 and well region 120 is a gate structure 130.

[0028] The gate structure 130 illustrated in FIG. 1A includes a gate oxide 135 located over the substrate 110, as well as a gate electrode stack 140 located over the gate oxide 135. In the particular embodiment shown, the gate electrode stack 140 includes a gate electrode layer 143, such as a polysilicon gate electrode, and a recrystallized polysilicon layer 148 located over the gate electrode layer 143. The recrystallized polysilicon layer 148 may have a final thickness that ranges from about 7 nm to about 35 nm, among others. F...

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Abstract

The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device, among other elements, includes a recrystallized polysilicon layer 148 located over a gate electrode layer 143, a capacitor 170 located on the recrystallized polysilicon layer 148. The capacitor 170, in this embodiment, includes a first electrode 173, an insulator 175 located over the first electrode 173, and a second electrode 178 located over the insulator 175.

Description

TECHNICAL FIELD OF THE INVENTION [0001] The present invention is directed, in general, to a semiconductor device and, more specifically, to a capacitor formed on a recrystallized polysilicon layer and a method of manufacture therefor. BACKGROUND OF THE INVENTION [0002] Modern electronic equipment such as televisions, telephones, radios and computers are generally constructed of solid state devices. Solid state devices are preferred in electronic equipment because they are extremely small and relatively inexpensive. Additionally, solid state devices are very reliable because they have no moving parts, but are based on the movement of charge carriers. [0003] Solid state devices may be transistors, capacitors, resistors and other semiconductor devices. Typically, such devices are fabricated on a substrate and interconnected to form memory arrays, logic structures, timers and other integrated circuits. One type of memory array is a dynamic random access memory (DRAM) in which memory cel...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/8242
CPCH01L28/40H01L27/1085H10B12/03
InventorLU, JIONG-PINGBU, HAOWENMONTGOMERY, CLINT
OwnerTEXAS INSTR INC