Structure and Method for Reflective-Type Mask

Active Publication Date: 2015-09-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a reflective mask used in an extreme ultraviolet (EUV) lithography exposing tool. The mask is designed to improve the manufacturing process of integrated circuits by addressing issues such as manufacturing fabrication and damage to the mask. The technical effects of the reflective mask include improved patterning accuracy, reduced image distortion, and improved manufacturing efficiency. The reflective mask includes a substrate made of low thermal expansion material, which minimizes image distortion, and a reflective multilayer that helps to improve patterning accuracy. The reflective mask is also designed to be more durable and easier to clean.

Problems solved by technology

Such scaling down has also increased the complexity of processing and manufacturing ICs and, for these advances to be realized, similar developments in IC processing and manufacturing are needed.
However, the existing reflective mask is vulnerable to manufacturing fabrication, such as cleaning process, and is easily damaged.

Method used

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  • Structure and Method for Reflective-Type Mask
  • Structure and Method for Reflective-Type Mask
  • Structure and Method for Reflective-Type Mask

Examples

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Embodiment Construction

[0012]The following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and / or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.

[0013]FIG. 1 is a se...

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Abstract

A reflective mask includes a substrate; a reflective multilayer formed on the substrate; an absorber layer formed on the reflective multilayer, wherein the absorber layer is patterned to have openings according to an integrated circuit layout; and a protection layer formed over the reflective multilayer within the openings.

Description

PRIORITY DATA[0001]This is a continuation of U.S. patent application Ser. No. 13 / 944,080, entitled “Structure and Method for Reflective-Type Mask,” filed Jul. 17, 2013, which claims the benefit of U.S. Prov. App. No. 61 / 789,750 entitled “Structure and Method for Reflective-Type Mask,” filed Mar. 15, 2013. The entire disclosures of both applications are herein incorporated by reference.BACKGROUND[0002]The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced generations of ICs where each generation has smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased while geometry size (i.e., the smallest component or line that can be created using a fabrication process) has decreased. This scaling down process generally provides benefits by increasing production...

Claims

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Application Information

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IPC IPC(8): G03F1/24G03F1/76
CPCG03F1/76G03F1/24G03F1/22G03F7/20
InventorSHIH, CHIH-TSUNGLU, CHI-LUNCHEN, JENG-HORNGCHEN, CHIA-CHENYU, SHINN-SHENGYEN, ANTHONYLIU, WEI-HUNG
OwnerTAIWAN SEMICON MFG CO LTD