Analog floating gate voltage sense during dual conduction programming

A floating gate and voltage technology, applied in the direction of electrical analog memory, electrical components, transmission systems, etc., can solve the problem of fast tunnel oxide capture and achieve the effect of reducing power consumption

Inactive Publication Date: 2008-07-30
INTERSIL INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Known disadvantages of dual conduction digital programming of floating gates include: larger total voltage required to provide dual conduction voltage, and faster tunnel oxide trap-up because more tunnel current is required
Furthermore, prior art bandgap voltage references typically draw relatively large currents, ie greater than 10 μA

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Analog floating gate voltage sense during dual conduction programming
  • Analog floating gate voltage sense during dual conduction programming
  • Analog floating gate voltage sense during dual conduction programming

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The present invention is a method of sensing an analog voltage on a floating gate during a set mode in order to accurately set the floating gate to a desired voltage. image 3 is a circuit diagram of a differential single floating gate circuit 30 for accurately setting the floating gate to an analog voltage during a high voltage set mode or set period in accordance with the present invention. Figure 4A is a circuit diagram of a differential double floating gate circuit 40 according to another embodiment of the present invention. Circuit 40 is also used to accurately set a floating gate to an analog voltage during the high voltage set mode. Once the analog voltage level is set, both circuit 30 and circuit 40 can be configured as a precision voltage comparator with a built-in voltage reference, or as a precision voltage reference circuit during a read mode. Circuit 30 and circuit 40 are preferably implemented using integrated circuits fabricated using industry standard C...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for sensing the voltage on a floating gate in a floating gate circuit during a set mode is disclosed. The method includes the steps of: a) causing the floating gate circuit to enter into a set mode, wherein a first predetermined voltage is coupled to the gate of a second transistor in the floating gate circuit; b) causing the voltage on the floating gate to be sensed relative to the first voltage by a first transistor; c) causing an output voltage to be generated by the floating gate circuit; and d) causing the voltage on the floating gate to be modified as a function of the output voltage, including modifying the charge level on said floating gate under the control of a first tunnel device and a second tunnel device operating in dual conduction during said set mode, said first tunnel device formed between said floating gate and a first tunnel electrode and said second tunnel device formed between said floating gate and a second tunnel electrode; and e) repeating steps b) through d) until the voltage on the floating gate is approximately equal to the first voltage.

Description

technical field [0001] The present invention relates to floating gate circuits, and more particularly to a method and apparatus for sensing an analog voltage on a floating gate while the floating gate is set to a desired voltage for precise control of said voltage. Background technique [0002] Programmable analog floating gate circuits have been used since the early 1980's in applications requiring only modest absolute voltage accuracy over time, such as 100-200 mV absolute voltage accuracy over time. Such devices are commonly used to provide long-term non-volatile storage of charge on floating gates. A floating gate is an isolated piece of conductive material that is electrically isolated from the substrate but capacitively coupled to the substrate or other conductive layers. In general, the floating gate forms the gate of a MOS transistor which is used to read the charge level on the floating gate without causing any charge to leak therethrough. [0003] Various means a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(China)
IPC IPC(8): H03K5/153H03K5/22G11C16/04G11C16/34G11C27/00H03K5/24H04L
CPCG11C16/3468H03K5/2481H03K5/249G11C27/005G11C16/0441
InventorW·欧文
OwnerINTERSIL INC