Method for manufacturing silicon nitride layer and method for manufacturing semiconductor element

A technology of silicon nitride layer and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of metal silicide influence and inability to meet the needs of semiconductor technology, so as to improve tensile stress and improve electronic performance. Mobility, the effect of improving the process margin

Active Publication Date: 2009-09-23
UNITED MICROELECTRONICS CORP
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] However, the silicon nitride etch stop layer used to form the contact window opening is formed after the metal silicide, so if the rapid thermal annealing process is used to increase the stress of the silicon nitride etch stop layer, the high temperature of the rapid thermal annealing process will affect the metal Silicides cause adverse effects
[0006] In addition, the current UV irradiation treatment of the silicon nitride layer is carried out in an environment of atmospheric pressure, and the tensile stress that can be increased has a certain limit, which cannot meet the needs of the semiconductor process.

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  • Method for manufacturing silicon nitride layer and method for manufacturing semiconductor element
  • Method for manufacturing silicon nitride layer and method for manufacturing semiconductor element
  • Method for manufacturing silicon nitride layer and method for manufacturing semiconductor element

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Embodiment Construction

[0053] figure 1 Shown is a cross-sectional view of a silicon nitride layer according to an embodiment of the present invention.

[0054] Please refer to figure 1 In the method for manufacturing a silicon nitride layer of the present invention, a substrate 100 is firstly provided, and the substrate 100 is, for example, a silicon substrate.

[0055] Next, a silicon nitride layer 102 is formed on the substrate 100 . The silicon nitride layer 102 is formed by, for example, chemical vapor deposition, such as plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, or atomic layer chemical vapor deposition.

[0056]Then, in a pressure environment lower than atmospheric pressure, the silicon nitride layer 102 is irradiated with ultraviolet light. Wherein, the pressure environment lower than atmospheric pressure is, for example, between 3 mTorr˜500 Torr, and may also be a vacuum environment. The wavelength range of the ultraviolet light is, for example, b...

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Abstract

A method for manufacturing a silicon nitride layer. First, a substrate is provided. Next, a silicon nitride layer is formed on the substrate. Then, in a pressure environment lower than atmospheric pressure, the silicon nitride layer is irradiated with ultraviolet light. Thereby, the tensile stress of the silicon nitride layer can be increased.

Description

technical field [0001] The invention relates to a method for manufacturing a silicon nitride layer, in particular to a method for manufacturing a silicon nitride layer with high tensile stress. Background technique [0002] As the semiconductor technology enters the sub-micron era, the technology below 65nm pays more and more attention to the improvement of the driving current of NMOS and PMOS. The improvement of the driving current of NMOS and PMOS will greatly improve the device delay time (time delay). [0003] In recent years, experts at home and abroad have begun to study the influence of the stressed silicon nitride cap layer and silicon nitride etch stop layer on the driving current of the device. Research has found that a silicon nitride layer with tensile stress can increase the driving current of the NMOS, and the greater the tensile stress, the more the driving current of the NMOS increases. [0004] However, the current best coating technology can only form a s...

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Application Information

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IPC IPC(8): H01L21/3105H01L21/336
Inventor陈能国蔡腾群廖秀莲
OwnerUNITED MICROELECTRONICS CORP