A microwave plasma chemical vapor deposition device

Abstract

The invention discloses a microwave plasma chemical vapor deposition device. The device comprises a waveguide device for guiding microwave, wherein the waveguide device is connected with a reaction chamber below the waveguide device, a plurality of reaction gas inlets are uniformly formed in the reaction chamber in a peripheral direction, an isolation window is horizontally arranged at the joint between the waveguide device and the reaction chamber, the isolation window is used for separating the waveguide device from the reaction chamber and allowing the reaction chamber to keep the preset vacuum degree, a sample platform for supporting a substrate support is coaxially arranged in the reaction chamber, and gas channels, from which the reaction gas flows out of the reaction chamber, are arranged around the substrate support. According to the microwave plasma chemical vapor deposition device, the technical problems in the prior art that the service efficiency of doped gases is low and the film forming effect is non-ideal as doping elements cannot be effectively mixed into the film formed on the surface of a substrate are solved. The device disclosed by the invention is mainly used in the field of plasma processing.

Description

technical field [0001] The invention relates to the field of microwave plasma processing, in particular to a microwave plasma chemical vapor deposition device. Background technique [0002] Microwave plasma is a kind of plasma formed by using microwave energy to ionize gas: the gas in the reaction chamber is ionized under the action of the imported microwave electromagnetic field to form a mixture of atoms, atomic groups, ions and electrons. Chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is a process technology in which reactive substances are ionized or decomposed under gaseous conditions, react on or near the surface of the substrate, and deposit solid substances on it, thereby producing solid materials. [0003] Microwave plasma CVD is a process device that uses microwave energy to realize chemical vapor deposition, which has the advantages of large output, high quality and low cost. The principle is that microwaves resonate in the reaction cha...

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