A light-emitting device

A technology of light-emitting device and current spreading layer, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of non-radiative recombination rate increase, reduction of optical output power and external quantum efficiency, etc.

Inactive Publication Date: 2015-05-20
NANYANG TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This causes an increase in the non-radiative recombination rate in multiple quantum wells (MQW), and thus reduces the optical output power and external quantum efficiency (EQE)

Method used

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Embodiment Construction

[0071] Such as Figure 8 The first embodiment described includes an LED device 800 . The device 800 is formed from GaN and mounted on a sapphire substrate 802 . N-doped electron injection layers 804 , 806 are disposed on the substrate 802 . Active light emitting layer 810 is sandwiched between electron injection layers 804 , 806 and hollow injection layer 812 . The N-type electrode (cathode) is located on the n-GaN layer 806 , and the P-type electrode (anode) 814 is located on the hole injection layer 812 .

[0072] In the first embodiment, the hole injection layer 812 provides a PNP current spreading layer 816 . For example, there is a single p-GaN / n-GaN / p-GaN structure, or there are multiple structures such as Figure 8 The shown dual p-GaN / n-GaN / p-GaN / n-GaN / p-GaN structure.

[0073] Figure 17 The second embodiment shown includes an LED device 1700 . The device 1700 is formed similarly to device 800 , but includes an ITO layer 1718 on top of a hole injection layer 1712...

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Abstract

A light emitting device comprising a plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, wherein the N doped layer having a doping level and thickness configured for substantial depletion or full depletion.

Description

technical field [0001] The present invention relates to light emitting diodes (LEDs), and in particular to lateral current spreading structures in LEDs. Background technique [0002] InGaN / GaN light-emitting diodes (LEDs) have made amazing progress over the past few decades. A remaining problem is that performance is still limited by the p-type GaN layer. Due to the low doping concentration and low hole mobility (poor electrical conductivity) of P-type GaN, the current crowding effect becomes very obvious, especially under high current operation. The immediate effects of current crowding under the P-type GaN electrode include the creation of high local heating and local carrier concentrations. This causes an increase in the non-radiative recombination rate in multiple quantum wells (MQW), and thus reduces the optical output power and external quantum efficiency (EQE). [0003] To alleviate the undesirable current crowding effect, various techniques have been developed. S...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/04H01L33/14H01L33/0016H01L33/005H01L33/28H01L33/30H01L33/32H01L33/40
Inventor张紫辉陈瑞添孙小卫希勒米·沃尔坎·德米尔
OwnerNANYANG TECH UNIV