18results about How to "Reduce voltage loss" patented technology

The utility model discloses reflow soldering equipment and a heating wire device thereof, and relates to the technical field of reflow soldering, and the heating wire device comprises a fixing frame and a three-phase heating wire assembly. The fixing frame comprises a fixing plate and a supporting structure, the supporting structure is detachably connected to the fixing plate, the three-phase heating wire assembly is installed on the supporting structure, one end of the three-phase heating wire assembly is fixed to the fixing plate and connected with the power line, and the other end of the three-phase heating wire assembly is fixed to the fixing plate and connected with the fixing plate through a conducting strip. Therefore, a three-phase star-shaped wiring structure is formed. The heating wire device adopts a three-phase star-shaped wiring structure, the current distribution of the wiring structure is more uniform, the voltage loss is effectively reduced, the service life of the heating wire structure is prolonged, meanwhile, the wiring circuit is shorter, and the cable cost is effectively saved; meanwhile, the fixing frame cancels a welding process, so that the assembly is simpler, the manufacturing difficulty is reduced, the time and the labor cost are effectively saved, and very high economic benefits are achieved.

The invention relates to application of 1-phenyl biguanide hydrochloride to a perovskite active layer, a perovskite solar cell module and a preparation method of the perovskite active layer and the perovskite solar cell module. The 1-phenyl biguanide hydrochloride is introduced to the upper surface of an FA0.95 Cs0. 05PbI3 perovskite thin film. Based on the Lewis acid-base pairing theory, organic molecules of 1-phenyl biguanide hydrochloride have electron-rich and electron-deficient functional groups at the same time, and can interact with various defects on the surface of perovskite, thereby passivating the defects on the surface of the perovskite film, inhibiting non-radiative recombination of photon-generated carriers at the interface of perovskite and a transport layer, and improving the photoelectric conversion efficiency of the perovskite film. Open-circuit voltage loss of the solar cell is reduced, and cell efficiency and stability are finally improved.

The utility model discloses a locking structure of double compensation lead roll bundle, including lead mechanism and locking mechanism, locking mechanism is fixed connection to lead mechanism top left side, locking mechanism includes locking box, locking box inner cavity back side right side is fixed connection motor, and locking box inner cavity back side right side is fixed connection motor, and locking box inner cavity back side right side is fixed connection motor, and locking box inner cavity back side right side is fixed connection motor, locking box inner cavity back side right side is fixed connection motor. The output end of the motor is fixedly connected with a first belt pulley, the back face of an inner cavity of the locking box is movably connected with a second belt pulley through a bearing, the surface of the first belt pulley is in transmission connection with a connecting belt, and the side, away from the first belt pulley, of the connecting belt is in transmission connection with the surface of the second belt pulley. The top and the bottom of the front face of the second belt wheel are movably connected with connecting rods through rotating shafts. According to the double-branch compensating lead, a traditional ribbon locking mode is changed, the locking block is adopted for locking treatment, the phenomenon of wire slipping cannot occur after long-time locking treatment, the phenomenon of scattering of the locked double-branch compensating lead cannot occur, and the locking tightness cannot be affected.

The invention discloses a control circuit and a control method of a power switch tube, and a switching power supply, and belongs to the technical field of switching power supplies. The control circuit of the power switch tube comprises a first P-type MOS tube, the source electrode of which is connected with a power supply voltage node and the drain electrode of which is connected with the driving end of the power switch tube; the drain electrode of the first N-type MOS tube is connected with a power supply voltage node, and the source electrode of the first N-type MOS tube is connected with the driving end of the power switch tube; the driving circuit is connected with the grid electrode of the first P-type MOS tube and the grid electrode of the first N-type MOS tube, drives the first P-type MOS tube to be conducted when the control signal of the power switch tube is a conduction signal and the power supply voltage of the power supply voltage node is smaller than the reference voltage, and drives the first N-type MOS tube to be conducted when the control signal of the power switch tube is a conduction signal and the power supply voltage is larger than or equal to the reference voltage. And the first N-type MOS tube is driven to be conducted, so that the voltage loss caused by the threshold loss of the power tube is reduced, and the driving capability of the driving circuit when the power supply voltage is relatively low is improved.

The invention provides an electrolytic cell and an electrolytic bath, the electrolytic cell comprises at least one electrolytic cell, the electrolytic cell comprises a polar plate assembly, and a circulation port, a diversion structure and a cavity arranged on the polar plate assembly, the circulation port and the cavity are communicated through the diversion structure, and the polar plate assembly comprises a polar plate and a frame which are connected with each other; one part of the diversion structure is arranged on the frame, and the other part of the diversion structure is arranged on the polar plate, so that the space of a flow field between the circulation opening and the cavity is enlarged. The flow field design between the circulation opening and the cavity is improved, the flow channel type polar plate and the flow channel type frame are combined to form the small electrolysis chamber structure of the flow guide structure, the water inlet and outlet amount of the electrolytic bath can be increased, the water inlet and outlet pressure can be reduced, and therefore mass transfer is enhanced, oxygen generated in the water electrolysis process is discharged in time, mass transfer resistance is reduced, and the service life of the electrolytic bath is prolonged. And meanwhile, the flow guide structure is arranged, so that heat transfer can be enhanced, heat is taken away, and the operation stability and the overall performance of the electrolytic cell are improved.

The invention relates to a semiconductor switching device (1), comprising a switchable power semiconductor (T 2 ) and at least one regulating circuit (RS 1 , R.S. 2 ), the regulation circuit includes a current sink (S 1 , S 2 ) and the current amplifier (V 1 , V 2 ). Current sink (S 1 , S 2 ) through the adjustment capacitor (C 1 ) and power semiconductors (T 2 ) is capacitively coupled to the collector / drain of the MOSFET and is designed to derive the current flowing through the regulating capacitor (C 1 ) of the current until the maximum current that can be set. Current amplifier (V 1 , V 2 ) on the input side and the current sink (S 1 , S 2 ) and the regulating capacitor (C 1 ) is connected to the end of the capacitive coupling and is connected to a positive or negative supply voltage and to a power semiconductor (T 2 ) is connected to the control electrode and is designed to amplify the current flowing through the regulating capacitor (C 1 ) of the current not flowing through the current sink (S 1 , S 2 ) and conducts the partial current into the control electrode of the power semiconductor (T2), so that the partial current in the power semiconductor (T2) is offset during the switching process. 2 ) on the collector-emitter-path or on the drain-source-path. In order to improve the semiconductor switching device (1), it is proposed that the semiconductor switching device (1) also has an additional circuit (1.1) for adaptive switching transition, which is connected to the power semiconductor (T 2 ) and the additional circuit is designed to, when the collector-emitter-path or the drain-source-path of the power semiconductor is switched from a blocked state to a conducting state, the power semiconductor (T 2 )’s collector voltage or drain voltage.

The present invention discloses a control structure of an electromagnetic pulse valve, including an air distribution box, a plurality of electromagnetic pulse valves are arranged on the air distribution box, one end of the air distribution box is arranged at an air inlet connected to an air supply device, a plurality of junction boxes are fixed on the air distribution box, and the plurality of junction boxes are connected in series through power signal lines respectively, the power signal line includes a signal line and a power line, the power signal line connected to the junction box near the other end of the air distribution box passes through the other end of the air distribution box, and the signal line connected from the other end of the air distribution box is connected to a pulse injection controller; each electromagnetic pulse valve is connected to a junction box through a wire. The present invention adds a junction box between the pulse injection controller and the electromagnetic pulse valve, and the pulse injection controller sends out a coded instruction, which is identified by a microprocessor in the junction box, and after being confirmed as a local electromagnetic pulse valve, an electronic switch is triggered to make the electromagnetic pulse valve spray, thereby simplifying the installation workload, reducing costs, and facilitating remote control.

The invention provides a dimer acceptor material based on an electron-withdrawing bridging unit as well as a preparation method and application of the dimer acceptor material. The structural general formula of the dimer type acceptor material is (I), and the dimer type acceptor material is constructed by taking a benzotriazole unit with electron-withdrawing capability as a central core and taking a planar rigid unit with electron-withdrawing capability as a bridging unit. The acceptor material has a relatively high glass transition temperature and a relatively low diffusion coefficient. The material is used in a photoelectric functional device, can stabilize the film morphology of an active layer, and finally can effectively improve the stability of the device, for example, as an active layer acceptor material of an organic solar cell, can promote commercial application of the organic solar cell.

The invention provides power supply equipment, power receiving equipment and an Ethernet power supply system, and belongs to the technical field of Ethernet power supply. In the scheme provided by the invention, the positive electrode of the direct-current power supply end in the power supply equipment and the positive electrode of the direct-current power supply end in the power receiving equipment are connected with the center tap of the transformer, the negative electrode of the direct-current power supply end is connected with the shielding layer of the shielding differential line, and the two signal lines in the shielding differential line are connected with the two ends of the transformer. Based on the connection mode, the two signal lines in the shielding differential line can be connected in parallel, so that the direct-current resistance of the shielding differential line is effectively reduced. Therefore, the power loss and the voltage loss of the shielding differential line can be effectively reduced.

The invention relates to a molten salt electrochemical method for template-free preparation of silicon nanowires by nickel in-situ catalysis of silicon waste, and belongs to the technical field of material preparation. The preparation method comprises the following steps: grinding and uniformly mixing adhesive gel and silicon waste to obtain a silicon waste-gel mixture, and sintering the silicon waste-gel mixture to obtain an adhesive silicon material; preparing an electrolytic precursor from the bonding silicon material, a nickel catalyst and a pore-forming agent; the electrolytic precursor is used as a reduction cathode, an inert electrode is used as an anode, a peroxide additive is added into the molten salt electrolyte, and at the temperature of 700-900 DEG C, molten salt electrolysis is carried out for 5-25 min with high-frequency pulse current and low duty ratio, then molten salt electrolysis is carried out for 40-120 min with medium-frequency pulse current and medium duty ratio, and then molten salt electrolysis is carried out for 80-200 min with low-frequency pulse current and high duty ratio; and after electrolysis is finished, a cathode product is taken out and cooled to the room temperature, the silicon nanowire is obtained through ultrasonic treatment, water washing, soaking and acid pickling and drying in sequence, the growth end of the silicon nanowire is agglomerated and coated to form a nano NiSi2 alloy film, and the mechanical stress of the silicon nanowire can be improved.

This utility model discloses a control device for a dual-winding stepper motor, relating to the field of stepper motor drive technology. It includes: a first winding control device and a second winding control device for controlling the two winding coils of a dual-winding stepper motor. Both the first and second winding control devices include a data acquisition and output unit and connected to it a main control unit, an operation display unit, a drive unit, and a power supply unit. They also include a maintenance unit connected to the main control unit and the drive unit. The output terminal of the drive unit is connected to the winding coils, and the main control unit, data acquisition and output unit, and drive unit are all connected to the power supply unit. The two drive units are interconnected. This utility model utilizes digital technology and modular design, making the system's control and monitoring more precise and flexible. Furthermore, each module can be independently designed, tested, and maintained.

The invention relates to the field of perovskite solar cells, and discloses a perovskite solar cell, a preparation method thereof and a solar cell module. The perovskite solar cell comprises a hole transport layer, a functional layer and a perovskite layer which are stacked in sequence. Wherein the functional layer comprises a first functional layer and a second functional layer; the first functional layer and the second functional layer respectively and independently comprise self-assembly molecules. The first functional layer and the second functional layer adjust energy level matching between the hole transport layer and the perovskite layer, passivate interface defects and improve cell performance.

The application relates to the technical field of photovoltaic modules, in particular to a laminated cell, a preparation method thereof and a photovoltaic module. The laminated cell comprises a top cell unit, a bottom cell unit and a composite layer between the top cell unit and the bottom cell unit. The composite layer comprises a plurality of spaced rod bodies, the rod bodies extend along a first direction, and the rod bodies have a first doping element. The rod bodies at least have a first part and a second part which are stacked, and the doping concentration of the first part is different from that of the second part. The structure of the rod bodies which are spaced and extend along the first direction in the composite layer can form a vertical carrier transport channel in the composite layer, the diffusion path of the carriers is shortened, and thus the carrier transport rate is improved. Meanwhile, by adjusting the doping concentrations of the first part and the second part, the conduction band energy levels of the first part and the second part can be adjusted, so that the potential barrier of the carriers during transmission in the composite layer is reduced, and voltage loss is reduced.

This invention discloses a perovskite thin film, a perovskite device, and a preparation method thereof. The preparation method of the perovskite thin film includes: coating a perovskite precursor solution onto a substrate to form a liquid film; removing at least a portion of the solvent from the liquid film using a vacuum process to form an intermediate phase film; and performing an annealing treatment to form the perovskite thin film; wherein the perovskite precursor solution contains an excess of A-site cations. The preparation method provided by this invention effectively compensates for the loss of A-site cations during the vacuum process, inhibits the formation of residual B-site cation salts, reduces device voltage loss, increases the grain size of the perovskite thin film, improves carrier transport and extraction, and increases the short-circuit current of the device; it is simple and easy to implement, low in cost, and requires no additional steps, making it suitable for the preparation of large-area perovskite thin films; it reduces the number of steps in perovskite device preparation, lowers material costs, and facilitates industrial development.

This invention discloses a lubricating oil metal shavings detection device, including an oil shavings separator connected to a sliding pipeline. A shavings sensor is installed on one side of the oil shavings separator, and the shavings sensor is connected to a shavings conditioner via a cable. The oil shavings separator can place metal shavings and lubricating oil in the lubricating oil below the shavings sensor and expel air from the lubricating oil from the top. The shavings sensor generates an induced voltage based on the metal shavings detected below and transmits the induced voltage signal to the shavings conditioner via the cable. The shavings conditioner can collect the number and size of the shavings based on the induced voltage transmitted by the shavings sensor and transmit this information to a host computer. In this invention, the shavings sensor uses a permanent magnet as the magnet, which can generate a stable magnetic field, has strong anti-interference ability against electromagnetic fields, and has more stable performance. The induced voltage in the induction coil is enhanced by increasing the lubricating oil flow rate. The entire device is a mechanical structure and is not affected by aircraft electromagnetic interference.

The present invention provides a memory data reading sensing circuit, the memory comprises a plurality of memory cells arranged in an array and reference cells arranged in an array, wherein the reference cells comprise a first reference cell and a second reference cell, the data reading sensing circuit comprises an integrated operational amplifier, the bit lines of the first reference cell and the second reference cell are commonly connected to an input end of the integrated operational amplifier, the output end of the integrated operational amplifier is connected to another input end of the operational amplifier, the output end of the integrated operational amplifier and the bit line of a column of the memory cell to be read are respectively input into a voltage comparator to judge the data stored in the memory cell through the output signal of the voltage comparator.

The invention provides a ternary organic solar cell based on asymmetric acceptor molecules and a preparation method thereof, and relates to the field of organic solar cells. The ternary organic solar cell forward device structurally comprises a transparent conductive glass substrate, a hole transport layer, a ternary organic active layer, an electron transport layer and a metal Ag electrode in sequence from bottom to top, wherein the ternary organic active layer comprises a polymer donor PM6, a non-fullerene electron acceptor L8-BO and an asymmetric acceptor BTP-OS. An asymmetric acceptor BTP-OS is selected as a third component, a PM6: L8-BO system is introduced, PM6 serves as a donor material of the ternary organic solar cell, L8-BO serves as an acceptor material, and the crystallinity, molecular orientation and vertical component distribution of a blending system are effectively improved by adding BTP-OS, so that charge recombination is effectively inhibited, and the performance of the ternary organic solar cell is improved. Dissociation and charge extraction of excitons in corresponding devices are improved; by adding BTP-OS, the compatibility between a donor and a host receptor can be adjusted, so that the multi-scale morphology of the blended membrane is improved.

The present invention discloses a multifunctional mobile phone power switching circuit, which includes a charging port and a battery, wherein the charging port includes a USB interface, an OTG interface, and a wireless charging interface, and a power switching circuit is provided between the charging port and the battery; the power switching circuit includes a wired charging circuit, a wireless charging circuit, and a charging chip, wherein the charging chip is connected to the wired charging circuit and the wireless charging circuit respectively, the charging chip is connected to the battery, the wired charging circuit is connected to the OTG interface and the USB interface respectively, and the wireless charging circuit is connected to the wireless charging interface. The multifunctional mobile phone power switching circuit obtained by the present invention utilizes the very small conduction voltage drop of the MOS tube, and the voltage loss of each charging path after conduction is extremely small, thereby improving the use efficiency of the power supply, and the pure hardware switching is conducive to improving the switching speed of the charging path, and the safety is improved, and no special multi-power management chip is required, and the cost is low. It is not only applicable to mobile phone products, but also applicable to other electronic products.