12results about How to "Improve conduction performance" patented technology

This invention proposes a graphene film-based photoconductive semiconductor switch and its application method. It includes a substrate, a graphene film layer, a semiconductor layer, a first electrode, a second electrode, and a light incident window. The substrate is an insulating, high-temperature resistant substrate with the semiconductor layer fixedly attached to its top surface. The graphene film layer covers the top surface of the semiconductor layer, forming an ohmic contact between the graphene film layer and the semiconductor layer. This invention utilizes the excellent conductivity of graphene to form an ohmic contact between the graphene film layer and the semiconductor layer, effectively reducing the switch's on-resistance and improving its conduction efficiency. Simultaneously, the ultra-thin structure of the graphene film layer enhances laser absorption efficiency, improves the switch's laser trigger sensitivity, and shortens the response time. The substrate is made of insulating, high-temperature resistant alumina ceramic material, which improves the switch's high-temperature stability and insulation performance, extending its service life. The overall structure is simple, cost-controllable, and highly practical, showing significant improvements in response speed, conduction performance, and stability.

This application discloses a PCB interconnect structure for reducing carbon film resistance. The PCB interconnect structure for reducing carbon film resistance includes: a conductive carbon film and a substrate film; a copper foil contact assembly is disposed between the conductive carbon film and the substrate film; the copper foil contact assembly includes an upper copper foil and a lower copper foil, the upper copper foil being fixedly disposed at the conductive carbon film, and the lower copper foil being fixedly disposed at the substrate film. In order to solve the problem that the carbon film button produced by ordinary manufacturing process has a high carbon film resistance due to process problems in the prior art, this application designs a copper foil contact assembly. By setting the copper foil contact assembly, the conductivity of the conductive current can be effectively enhanced during use, and at the same time, a support structure is set to ensure the support gap between the conductive carbon film and the substrate film, thereby greatly reducing short circuits caused by accidental contact, and the use effect is better.

The utility model discloses a separated spray dust removal tower which comprises a tower body, a plurality of groups of spray pipes and spray heads, a sedimentation tank arranged at the bottom of the tower body, a spray pump communicated with the spray pipes, and spray isolation components arranged between the adjacent spray pipes. The spraying isolation assembly comprises an annular water collection tank, a water baffle arranged above the through hole, a water drainage pipe communicated with the water collection tank and a plurality of supporting pieces, the water collection tank is used for collecting spraying liquid on the upper layer, the water baffle is arranged above the through hole in a suspended mode and prevents the spraying liquid from directly dripping to the lower layer, and the water drainage pipe introduces the collected liquid into the sedimentation tank. By means of the structure, liquid physical isolation of different spraying intervals is achieved, meanwhile, vertical and smooth flowing of flue gas is kept, the dust removal efficiency is improved, interlayer interference is avoided, and the device has the advantages of being simple in structure, high in adaptability, stable in operation and the like and is suitable for various industrial flue gas treatment scenes.

The invention discloses a method for improving hole concentration in a p-type compound semiconductor. Comprising the following steps: in the growth process of a p-type doped compound semiconductor epitaxial layer, co-doping and introducing a certain concentration of compensating impurity elements used for inhibiting intrinsic donor type point defects in a compound semiconductor; after growth of the p-type doped compound semiconductor epitaxial layer is completed, annealing treatment is carried out in a protective atmosphere containing non-metallic elements in the compound semiconductor; wherein the hole concentration of the epitaxial layer is improved through the combined action of the introduction of the compensating impurity element and the annealing treatment. According to the method disclosed by the invention, through a synergistic process of low-atomic-number same-family element doping and nitrogen-containing atmosphere annealing, synchronous improvement of the bulk material and the surface hole concentration is realized.

The invention provides a field effect transistor and a preparation method thereof. The field effect transistor comprises a substrate, an epitaxial layer on the upper surface of the substrate, a grid electrode, a first well region, a second well region, a first source region, a second source region, a source electrode and a drain electrode. The gate includes a lateral portion extending laterally within the epitaxial layer and a vertical portion extending from the lateral portion toward the substrate. A first well region in the epitaxial layer includes a first portion extending away from the vertical portion from a sidewall of the vertical portion and a second portion extending toward the substrate from a lower surface of the lateral portion. A second well region in the epitaxial layer extends away from the lateral portion from a sidewall of the lateral portion. A first source region in the epitaxial layer is on a side of the first well region away from the substrate. A second source region in the epitaxial layer is on a side of the second well region away from the substrate. The source electrode is located on the first source region and the second source region, and the drain electrode is located on the lower surface of the substrate.

The present application belongs to the technical field of power semiconductor devices, and relates to a self-bias split gate bipolar transistor and a manufacturing method thereof. The present application provides a bias potential for the split gate (11) through the potential of the floating P region (18), thereby forming the electron accumulation ability below the trench, enhancing the conductance modulation ability, and thus enhancing the forward conduction ability of the device. Compared with the traditional split gate structure, the diode and capacitor structure of the self-bias structure are integrated into the IGBT structure, which can simultaneously improve the conduction ability and switching performance of the device without affecting the device size and IGBT operation, eliminates the negative effects brought by the split gate, improves the switching loss and enhances the switching speed, optimizes the forward conduction ability of the device, and improves the compromise characteristics between the forward conduction voltage drop and the off-state loss of the device.

The invention provides a lithium metal composite negative electrode, a preparation method thereof and a solid-state battery. The lithium metal composite negative electrode is of a multi-layer structure and sequentially comprises a current collector, a strengthening layer, an active substance layer and a space functional layer, the strengthening layer is a current collector conductive and mechanical property strengthening layer, the active substance layer is a lithium metal and / or lithium alloy layer, and the space functional layer is a layer with a three-dimensional network material loose porous structure. In the spatial functional layer, a three-dimensional network structure provides storage space and deposition sites for lithium ions, the spatial functional layer has conductivity and can regulate and control uniform deposition and separation of metal lithium in the spatial functional layer, and a loose porous structure effectively inhibits growth of lithium dendrites. The space functional layer isolates direct contact between lithium metal and the solid electrolyte and serves as a middle layer to reduce generation of side reactions, and the metal lithium solid-state battery is promoted to achieve the application target of high power and long circulation.

The application discloses an ultrasonic probe, an ultrasonic imaging system and a preparation method. The ultrasonic probe comprises a transducer assembly, and the transducer assembly comprises a matching layer, a piezoelectric layer having opposite first and second surfaces, the second surface of the piezoelectric layer being connected to the matching layer, the piezoelectric layer comprising a plurality of array elements arranged in an array, a flexible circuit board comprising an insulating substrate and a plurality of conductive parts, the insulating substrate being connected to the first surface of the piezoelectric layer, the plurality of conductive parts being arranged on the side of the insulating substrate facing the piezoelectric layer, a backing connected to the side of the insulating substrate away from the piezoelectric layer, a conductive adhesive used for bonding the insulating substrate and the piezoelectric layer, the conductive adhesive comprising a plurality of conductive particles, the conductive particles being used for conducting the array elements and the conductive parts, and a containing structure used for containing the conductive particles and limiting the movement of the conductive particles, the first surface of each array element being provided with the containing structure, so that the first surface of each array element is conducted with one conductive part, and the conduction rate of the array elements is improved.

The invention relates to the technical field of solar cells, and discloses a back contact laminated solar cell and a cell module. The cell comprises a substrate layer, a first carrier transport layer, a second carrier transport layer, a first light absorption layer and / or a second light absorption layer, a first electrode and a second electrode, wherein the substrate layer comprises a light receiving surface and a backlight surface; the first carrier transport layer is arranged in the first area of the backlight surface; the second carrier transport layer is arranged in the second region; the first light absorption layer with the band gap width larger than that of the substrate layer is arranged on the light receiving surface; the second light absorption layer with the band gap width smaller than that of the substrate layer is arranged on the backlight face, the first electrode is connected with the first carrier transmission layer, and the second electrode is connected with the second carrier transmission layer. The first light absorption layer and the second light absorption layer can be arranged on the light receiving face and the backlight face respectively, band gaps are gradually decreased from top to bottom, absorption of light of different wave bands can be enhanced, and the photoelectric conversion efficiency and the power generation performance are improved.

The utility model discloses a kind of U-shaped convergence branch line clamps, including the first connecting piece and the second connecting piece of U-shaped, the second connecting piece is slid in the first connecting piece opening along cable passing direction, and fixed cable is formed with surrounding structure, the opening of the first connecting piece is set as cladding area, the second connecting piece is set with the area of sticking away from the side of first connecting piece, and cladding area is adhered with the area of sticking after pressure bonding by mould;The utility model is simple in structure, reasonable in design, by setting the first connecting piece and the second connecting piece, the first connecting piece and the second connecting piece form wire slot structure to accommodate cable after splicing, and the pull-off force between the first connecting piece and the second connecting piece is enhanced, and the connection strength is improved.

This invention relates to the field of circuit breaker mounting box technology, and discloses a modularly adaptable instantaneous circuit breaker integrated mounting box, including an integrated base. The integrated base serves as an overall mounting carrier for assembling protective covers, an instantaneous circuit breaker, and a signal acquisition harness. The instantaneous circuit breaker is detachably and fixedly installed inside the integrated base. Embedded nuts are provided on the support seats on both sides of the integrated base, and the two ends of the conductive busbar inside the instantaneous circuit breaker are respectively connected to the embedded nuts on both sides. Two protective covers are symmetrically installed on the support seats, adopting a flip-open structure and equipped with a vibration-proof and anti-detachment limiting structure to protect the conductive busbar. The signal acquisition harness is connected to the embedded nuts of the integrated base through a pressure plate. The integrated base has an arc guide groove and a harness buckle to limit the harness. A harness avoidance groove is provided below the harness placement position to reserve the bending radius. The harness interface is snapped and fixed in the interface slot on the outside of the integrated base.

The utility model provides a conductive through hole structure and a substrate. The conductive through hole structure comprises a first plate provided with a first through hole; the first metal layer is positioned on the side wall of the first through hole; the conductive core is located in the first through hole, the soft soldering metal layer wraps the outer side of the conductive core, and the gap between the first metal layer and the conductive core in the first through hole is filled with the soft soldering metal layer. The substrate comprises a conductive through hole structure. According to the conductive through hole structure, the first metal layer, the soft soldering metal layer and the conductive core are arranged in the first through hole, the hole filling mode and hole filling materials of an existing conductive through hole are optimized, double-face laser copper filling or resin hole filling does not need to be used, and the conductive through hole structure with the large depth can be effectively improved. High heat dissipation performance, conduction performance and signal conduction performance can be kept, and for the first through hole with the large or small depth-to-width ratio, a series of quality problems such as great sinking or unevenness or cavities or bubbles cannot be generated.