252results about How to "Improve conduction performance" patented technology

The invention discloses a preparation method of a ceramic coating separator for lithium ion batteries and belongs to the technical field of lithium ion battery separator production. The method involves a polymer porous base film, a polymer glue applied on one or both sides of the base film surface, a ceramic coating applied on the surface of the polymer glue, and a PVDF and its copolymer glue applied on the other side of the ceramic coating surface and the base film surface, wherein the PVDF and its copolymer glue are coated on the other side of the ceramic coating surface and the base film surface. The inorganic ceramic particles adopted by the invention are non-spherical and multi-particle, which can greatly improve the porosity of the ceramic coating, increase the lithium ion transit property, improve the liquid absorption rate of the diaphragm, and improve the rate performance and cycle life of the lithium ion battery. As the structure design of the ceramic coat diaphragm of the invention can increase the adhesive force of the ceramic coating and the polymer porous base membrane, the adhesive strength of the diaphragm and the positive and negative electrode sheets is improved,the problems of powder dropping and coating peeling off are effectively improved, the high-efficient automatic assembly of the lithium battery is realized, and the heat resistance and electrochemicalstability of the diaphragm are greatly improved.

The invention discloses a unilateral MOS-type device manufacturing method integrated with an SBD structure. Through introducing a special angle groove manufacturing process, an inclination angle unilateral ion implantation process and a schottky metal process compatible with an ohm process, manufacturing of an SiC groove MOSFET device integrated with an SBD structure is realized. The silicon carbide SBD structure is integrated in the silicon carbide groove-type MOSFET device, a reverse follow current function can be realized well, the reverse recovery time of the MOSFET device can be reduced,and the application cost of a silicon carbide power electronic device can be effectively reduced. In combination of a unilateral high-mobility groove structure with special crystal face etching, whilethe groove mobility is improved, the size of a primitive cell is narrowed, and the device conduction ability is improved.

The invention relates to a flexible conductive composite fabric, and preparation and application thereof. The flexible conductive composite fabric comprises a conductive composite film (1), a base fabric (2) and an adhesive (3), wherein the base fabric (2) is adhered on the upper and lower surfaces of the conductive composite film through the adhesive (3); and two ends of the conductive composite film (1) are respectively adhered with an electrode. The flexible conductive composite fabric is prepared through the following steps: impregnating a carbon nanotube thin film in a graphene suspension, then taking the carbon nanotube thin film out of the graphene suspension, and carrying out drying in the air so as to obtain a carbon nanotube / graphene composite film; allowing a polyaniline nanowire array to grow in situ on the surface of the carbon nanotube / graphene composite film so as to obtain a carbon nanotube / graphene / polyaniline composite film; and respectively adhering an electrode at two ends of the composite film, coating the base fabric on the upper and lower surfaces of the composite film through the adhesive, and carrying out curing so as to obtain the flexible conductive composite fabric. The prepared conductive fabric provided by the invention has good conductivity, can reach 103 S / m to 105 S / m, can bear a certain degree of bending and compressive deformation, and is extensively applied in the fields of intelligent textile structures and intelligent materials.

The invention relates to a liquid crystal display device and a repairing method thereof. The liquid crystal display device comprises a glass base plate, a transparent public electrode formed on the glass base plate, an insulating layer and a passivation layer respectively deposited on the transparent public electrode, a pixel electrode formed on the transparent public electrode through isolating the insulating layer and the passivation layer, and a storage capacitance formed by the insulating layer between the pixel electrode and the transparent public electrode. The liquid crystal display device and the repairing method thereof can improve the aperture ratio of a display unit and the ducting capacity of the public electrode.

The invention discloses a heavy-current whole-wafer total-pressure-contact flat-plate encapsulated IGBT (Insulated Gate Bipolar Transistor) and a manufacturing method thereof. The heavy-current whole-wafer total-pressure-contact flat-plate encapsulated IGBT comprises an IGBT whole wafer and a total-pressure-contact flat-plate encapsulation, the whole wafer comprises multiple independent IGBT device regions, each IGBT device region is composed of multiple IGBT units which are connected in parallel, collectors of all the IGBT device regions are connected in parallel to form a total collector, atransmitter is led from each IGBT device region independently, gate poles of all the IGBT device regions in a normal operating state are connected to a total gate pole arranged in the center of the wafer by using an interconnecting line, and the transmitter of each IGBT device region is connected with a metal electrode plate of a total transmitter in parallel by virtue of a metal gasket of the transmitter. According to the invention, a heavy-current IGBT whole wafer device is realized, the advantages of high working voltage, low switching power consumption and simple voltage control of the gate pole are maintained, current carrying capacity, heat-conducting property, heat shock resistance and long-term reliability of the device are improved, and the problem of property matching between IGBT units is solved.

Provided is a superspeed heavy current LIGBT, relating to the semiconductor power device. The superspeed heavy current LIGBT comprises a silicon substrate, and a drift region, a channel region, an ohmic contact heavily doped region, a cathode, a grid medium, an anode leading-out wire, a grid, a cathode leading-out wire and an anode which are all arranged above the silicon substrate and buried oxide. The drift region is provided with an electric field strengthening unit on the upper surface of the portion between the anode and the channel region; and the electric field strengthening unit is used for generating an electric field pointing to the lower surface of the electric field strengthening unit from the anode, and is isolated from the drift region through an insulating medium. The superspeed heavy current LIGBT improves the conduction performance and switching performance of an LIGBT device.

The invention relates to a weaving method of a carbon fiber preform of an automobile brake disc, and belongs to the technical field of carbon fiber composite material reinforcement weaving. The methodincludes the following steps: (1) preparing a carbon fiber plain cloth; (2) preparing a carbon fiber net tire; (3) sewing the carbon fiber plain cloth of step (1) and the carbon fiber net tire of step (2) together to form a plain-mesh tire cloth; and (4) winding the plain-mesh tire cloth obtained in the step (3) for a plurality of circles along the circumferential direction of a graphite sleeve,and needling once in each winding circle until the size requirement of the carbon fiber preform is met to form the carbon fiber preform, wherein the weight percentage of the carbon fiber plain cloth in the carbon fiber preform is more than or equal to 67%, and the weight percentage of the carbon fiber net tire is less than or equal to 33%. The preparation method is safer, the fiber waste quantityis less, the thermal conductivity in the thickness direction of the product can be ensured to be higher, the internal phase of the material is more uniform, and the friction surface is smoother and more beautiful.

The invention provides an electrostatic locking vertical sensitive micromechanical inertial switch which comprises an insulating substrate, array fixation electrodes, a pull-in electrode, a mass block, conjoined serpentine springs, spring fixation bearings and a reverse limit stop structure. The array fixation electrodes are formed by a graph array through layout wiring, is insulated from the pull-in electrode through air gaps, and is located on the insulating substrate. The mass block is connected with four conjoined serpentine springs, forms a suspended movable structure through the spring fixation bearing, and is located above the plane of the fixation electrodes and the pull-in electrode. The reverse limit stop structure is suspended above the mass block. According to the invention, the fixation electrode array is used; through in-plane multi-point layout, the conducting possibility of the fixation electrodes and the mass block is greatly improved; the pull-in electrode and the mass block are under electrostatic attraction, which can arbitrarily prolong contact time and improve contact performance; the reverse limit stop structure can effectively suppresses the large deformation of the mass block in a non-sensitive direction, which improves the stability of the device.

The invention relates to a high-vacuum low-temperature container molecular sieve adsorbing device and a filling process thereof. The high-vacuum low-temperature container molecular sieve adsorbing device comprises an inner container and an outer container, wherein the inner container is provided with a process manhole and the outer container is provided with an anti-explosion hole. The filling process comprises the steps of: charging nitrogen in an adsorbing agent containing container to reach pressure atmosphere, and then opening the anti-explosion hole, connecting a vacuumized rubber pipe, connecting a corrugated pipe with a molecular sieve, starting a vacuum pump, slowly opening a feeding valve, enabling a molecular sieve adsorbing agent to continuously flow into a molecular sieve device under the action of negative pressure, after the molecular sieve adsorbing agent is filled with the molecular sieve device, dismantling the corrugated pipe, then plugging the corrugated pipe with ascrew plug, finally, stopping the vacuum pump, unplugging the vacuum rubber pipe, and closing the anti-explosion hole, and ending the filling of the whole molecular sieve adsorbing agent. The invention has the characteristic of better adsorbing effect, and has the advantages of increasing the load capacity of the whole vehicle, saving the cost, being more convenient for maintenance, improving thewhole quality of a low-temperature container, improving the labor intensity and the operation environment of workers, enhancing the production efficiency, and being convenient and simple in replacingthe molecule sieve.

The invention discloses a manufacturing method for a front electrode of a crystalline silicon solar battery, and the method comprises the following steps: on the basis of using a mixture of indium-gallium alloys with a low melting point and copper powder as a composite slurry, carrying out laser grooving on the front electrode region of a silicon slice so as to prepare a selective emitting electrode; then printing the composite slurry in the grooving region by utilizing a high-standard silk-screen printing process; and finally, carrying out the low-temperature sintering at 300-400 DEG C to form the front electrode. Compared with the prior art, the manufacturing method disclosed by the invention has the advantages that the manufacturing cost can be lowered, the sintering temperature is reduced, and the quality of a product is improved, thus the manufacturing method has important industrialization prospects in the field of crystalline silicon solar batterys.

The invention discloses a positive electrode grid line of a solar cell, comprising at least three main grid lines and a plurality of auxiliary grid lines; the main grid lines are arranged in a mutual parallel manner; the auxiliary grid lines are parallel to each other and perpendicular to the main grid lines; every two adjacent central axial lines between the two main grid lines are main grid central lines; the widths of the auxiliary grid lines are distributed in a stepped reduction manner from the main grid lines to the main grid central lines or edges of a positive electrode of the cell. According to the positive electrode grid line of the solar cell, the solar cell and the manufacturing method of the solar cell, the broken lines due to jump cut problem are avoided and the problem of EL (electroluminescence) broken lines is solved; meanwhile, the light interception area of the cell can further be increased, the current conduction capability is enhanced and the conversion efficiency of the cell is improved.

The invention relates to a circuit, and especially relates to a detection feedback circuit. The detection feedback circuit comprises a field effect transistor and a resistor R1, wherein a control electrode of the field effect transistor connects the resistor R1, and a source or drain electrode of the field effect transistor connects a control circuit. The detection feedback circuit is characterized by also comprising a thermistor, wherein the control electrode of the field effect transistor connects the thermistor. The invention is aimed at monitoring components temperature in real time and carrying out feedback control on components work voltage or current to stabilize work voltage or current of the components, guarantee normal work voltage or current of the components, prevent a temperature of the components working environment from rising too high, avoid damage of the components and prolong the service life of the components.

The invention discloses a portable angle-adjustable type electronic screen test fixture. The portable angle-adjustable type electronic screen test fixture comprises a mounting seat and a rack, whereinthe rack is hinged with the mounting seat through a hinged shaft; an angle adjusting device is arranged between the mounting seat and the rack; a PG test box, a carrier and a POGO conduction device are arranged on the rack; the PG test box is electrically connected with the POGO conduction device; the carrier is of an integrated plate-shaped structure; a support boss and limiting structures are arranged on one side surface of the carrier; the limiting structures are arranged on the periphery of the support boss; each limiting structure comprises a guiding groove formed in the surface of the carrier and a limiting block connected into the guiding groove in a sliding fit manner, and the limiting block is connected with the carrier through a positioning structure. The fixture is simple in structure and convenient to carry, and can be applicable to lighting tests of electronic screens with various sizes on the premise that the carrier is not replaced integrally.

A ball switch is composed of a casing consisting of a base plate with an array of several through holes and a central arc recess and a peripheral wall to define an internal space with top opening, several terminals passing through said through holes on base plate, at least one ball in said internal space and an external cover for locating said terminals and closing said top opening.

The invention discloses an insulating piercing wire clamp, and the wire clamp consists of a wire clamp core assembly and a wire clamp case assembly. The wire clamp core assembly can stretch out and draw back laterally, and the left and right side walls of the wire clamp core assembly are respectively provided with a cable duct. The interior of the wire clamp core assembly is provided with N wire holes and N wire seats. There are N metal wires, and the spiral telescoping parts of the metal wires are respectively disposed in the wire seats. Two piercing pointed ends at two sides of each spiral telescoping part respectively stretch into two cable ducts. The wire clamp case assembly comprises a left case and a right case, and the inner sides of the bottoms of the left and right cases are respectively provided with a wire pressing groove. The left case is clamped outside the right case, and there is a guide non-return mechanism between the left and right cases. Two groups of opposite wire pressing grooves and the cable ducts enable a main cable and branch cables to be clamped firmly, and each metal wire enable the main cable to be connected with the branch cables. After the insulating piercing wire clamp is installed, the insulating piercing wire clamp is good in sealing performance, is low in contact resistance, is high in stability, and can carry out the buffering of deformation and strain changes caused by temperature difference. Therefore, the insulating piercing wire clamp is long in service life, is stable in operation, is low in cost, and is convenient to install.

The invention relates to the technical field of semiconductor device fabrication, in particular to a high-performance normally-off GaN field effect transistor and a preparation method thereof. The device includes a substrate, an epitaxial layer, a gate dielectric layer, a gate pole, a drain pole and a source pole grown on the substrate. The epitaxial layer includes an epitaxially grown stress buffer layer and a GaN channel layer, masks are only retained in a gate region by mask patterning and etching processes, after mask residues and surface smears in an access region are removed by in-situ etching, an AlGaN / GaN heterojunction structure is grown in a selective region to form a trench channel. A gate metal covers the trench channel, both ends of the transistor form a source region and a drain region, and metals cover the source region and the drain region to form the source pole and the drain pole. The structure of the high-performance normally-off GaN field effect transistor is simple, the preparation process is simple and reliable, the in-situ etching of the access region can reduce defect impurities introduced in the access region of the transistor in a mask preparation process,thereby obtaining a high-quality access region interface and ensuring the secondary epitaxial AlGaN / GaN heterojunction structure quality so as to improve the conduction performance of the normally-off GaN field effect transistor.

The invention belongs to the technical field of high voltage and high power pulse power switch, in particular to a laser triggered multistage vacuum switch. The laser triggered multistage vacuum switch comprises a laser triggered vacuum clearance, a multistage self-breakdown vacuum clearance and a trigger system; the multistage self-breakdown vacuum clearance is fixed to the upper end of the lasertriggered vacuum clearance through the fastening connecting parts; and a pressure equalizing ring is covered outside the upper insulating shell. According to the invention, the series technique of the laser triggered vacuum clearance and the multistage self-breakdown vacuum clearance is adopted, and the laser triggered vacuum clearance and the multistage self-breakdown vacuum clearance are coordinated each other to achieve the application of the laser triggered multistage vacuum switch in a high voltage, high repetition frequency and high power pulse power system; and multiple channels of laser are used to bombard the trigger target material simultaneously, therefore, the affect area of the laser on the target material is increased, more initial plasmas are generated, and the conduction performance of the laser triggered vacuum switch is further improved. Using the laser triggered multistage vacuum switch, the complex process and high cost required by long term maintenance is avoided.

The invention relates to the technical field of power system capacitors and particularly relates to a cooling and heat radiation structure of a capacitor, which comprises a cooling mechanism, a heat radiation mechanism and multiple parallel capacitor elements, wherein the capacitor element is coated with a layer of insulating paper; the cooling mechanism comprises a water tank and a water pipe; one side of the water tank is communicated with the water pipe, and the other side of the water tank is provided with a sliding piston; the water pipe is wound on the capacitor element coated by the insulating paper; the heat radiation mechanism comprises a power supply, a fan, a paper plate and a paper plate groove; the paper plate, the fan and the power supply are connected by wires; the fan is fixedly connected with a rotating shaft; the rotating shaft is connected with a speed reduction gear set through an input shaft; the output shaft of the speed reduction gear set is connected with a threaded rod; the threaded rod is connected with a casing; and the casing is fixedly connected onto the piston. The capacitor is cooled by using the water pipe to be wound on the capacitor and water to flow in the water pipe, the fan is also rotated, and the cooling and heat radiation effects of the capacitor are further enhanced.

The invention discloses a display device which comprises a display panel, a circuit substrate, a grounding pad and a conductive shell. The circuit substrate is in electrical connection with the display panel. The grounding pad is located on the circuit substrate. Slicing seams penetrate through the grounding pad and the circuit substrate. The slicing seams are provided with a plurality of contact parts on the grounding pad. The conductive shell is provided with a protruding portion which presses and bends the contact portions, so that the bent contact portions are attached to the protruding portion.

The invention provides a thin film transistor, an array substrate, and a display device. The thin film transistor consists of a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; the gate insulating layer is arranged between the gate electrode and the active layer; the source electrode and the drain electrode are respectively and correspondingly arranged at the two ends of the active layer; and the active layer is made of a metallic nitrogen-oxide material. Besides, the thin film transistor also includes a conductive oxygen vacancy reduction layer that is arranged between the active layer and the source electrode and / or is arranged between the active layer and the drain electrode; and the conductive oxygen vacancy reduction layer is used for carrying out oxygen vacancy reduction in the active layer. According to the thin film transistor, because the oxygen vacancy reduction layer is arranged, the number of oxygen vacancy units in the active layer is substantially reduced, thereby improving the transmission rate of the carrier; and the sub threshold swinging of the thin film transistor is also reduced and thus the conduction performance of the thin film transistor is substantially improved.

The invention discloses a high-temperature low-impedance long-service life electrolytic capacitor, which comprises an aluminum cylinder; one end of the cylinder is opened; an electrolyte layer is arranged in the cylinder; the opened end of the cylinder is provided with a sealing layer which seals the cylinder; an anode is penetrated in the sealing layer and is conducted with the electrolyte layer; and a cathode is arranged outside the sealing layer and is conducted with the cylinder. The conducting performance of the high-temperature low-impedance long-service life electrolytic capacitor is enhanced by adopting electrolyte paper and conductive paper arranged at intervals; the sealing performance of the high-temperature low-impedance long-service life electrolytic capacitor is enhanced through the arrangements of a groove and a convex edge; and the service life of the capacitor is prolonged due to excellent sealing effect of the high-temperature low-impedance long-service life electrolytic capacitor.

The invention relates to an enhanced semiconductor transistor and a preparation method thereof. The enhanced semiconductor transistor comprises a substrate, a semiconductor epitaxial layer, a gate electrode, a source electrode and a drain electrode, wherein the semiconductor epitaxial layer are grown on the substrate; and the epitaxial layer comprises a nitride nucleating layer, a nitride stress buffer layer, a nitride channel layer, a primary epitaxial nitride barrier layer, a p-type nitride layer and a secondary epitaxial nitride barrier layer. Through region selection etching, p-type nitride in a gate region is reserved to turn off the gate electrode; and through region selection secondary epitaxy after masking, the secondary epitaxial nitride barrier layer is grown on the primary epitaxial nitride barrier layer, so that the connectivity of an access region is improved. The thicknesses and the components of the primary epitaxial nitride barrier layer and the secondary epitaxial nitride barrier layer are regulated and controlled, so that better gate turn-off capability and high conductivity of the access region are achieved. According to the method, the requirements for an etching process are reduced, and the etching damage can be effectively repaired. Finally, the enhanced semiconductor transistor with high threshold voltage, high conductivity and high stability can be realized.

The invention discloses a method for interconnecting back faces of wafer level chips during packaging. Blocking materials on a wafer welding cushion are removed through laser etching, a certain area of surface of the welding cushion is exposed to be connected with a metal wiring layer, and electricity of an element area is led to the back faces of wafers. Through the method that the blocking materials on the welding cushion are removed directly through laser etching, the process steps of photoresist coating, photo-etching exposure, developing, photoresist removing and the like are omitted; by selecting an appropriate laser wavelength, adjusting the laser focusing position, adjusting the energy, focus spot area, acting pulse number and other parameters of lasers acting at the bottom of a first opening and controlling laser etching to reach the surface of the welding cushion without penetrating through the welding cushion, a large area of the welding cushion is exposed. The method is convenient to operate, the contact area of the welding cushion and the metal wiring layer is enlarged, and conductivity is more reliable.

The invention discloses a multi-layer anisotropic conductive adhesive film. The multi-layer anisotropic conductive adhesive film comprises an upper conductive adhesive layer, a thin metal layer and alower conductive adhesive layer, wherein the thin metal layer is formed between the upper conductive adhesive layer and the lower conductive adhesive layer and is 50-3000 nm thick, and a release filmlayer or a carrier film layer is formed below the lower conductive adhesive layer. The multi-layer anisotropic conductive adhesive film has high conductivity and high electromagnetic wave shielding function. Metal conductive particles contained in the upper conductive adhesive layer and the lower conductive adhesive layer are in various shapes, and the thickness of the thin metal layer is nanoscale; when the conductive adhesive film is conducted, the metal conductive particles tend to flow in multiple directions, and conduction in all directions can be achieved; meanwhile, the metal conductiveparticles can pierce the thin metal layer, the number of the metal conductive particles can be reduced under the same conducting force, metal powder pollution is reduced, and the production cost is reduced.

The invention provides an enameled wire coating-stripping-free quick connection process and relates to the technical field of the coating-stripping-free quick connection process. The enameled wire coating-stripping-free quick connection process comprises a single splicing clamp (1) and strip-shaped teeth (2), and a plurality of strip-shaped teeth (2) are evenly arranged on the inner wall of the splicing clamp (1). The enameled wire coating-stripping-free quick connection process is reasonable in design, and simple in structure, replaces traditional welding process, has quickand reliable connection and breakover effects, and is popularized and applied to motors of refrigeration compressors nationwide firstly and is popularized in a common motor industry at present.

The invention provides a layout method of a SiC JBS device, which comprises the following steps of: growing an epitaxial layer on the crystal surface of a silicon carbide substrate, and dividing an active region with a rectangular structure on the epitaxial layer, arranging a terminal protection region at the periphery of the active region, arranging a plurality of P-type regions in the active region, arranging the plurality of P-type regions in a multi-row and multi-column staggered manner, implanting ions into each P-type region, and arranging Schottky contact regions between the P-type regions, and depositing an ohmic contact metal layer on the back surface of the silicon carbide substrate to generate the SiC JBS device. The plurality of P-type regions are arranged in the SiC JBS devicein a multi-row and multi-column staggered manner, so that the reverse breakdown characteristic of the SiC JBS device is ensured, the Schottky barrier region area is increased, and the conduction capability is improved.