41results about How to "Improve conduction performance" patented technology

The invention discloses a semiconductor device and a preparation method thereof, a power module, a power conversion circuit and a vehicle, and relates to the technical field of semiconductors, a semiconductor body of the semiconductor device is set as a first conductive type, a first surface of the semiconductor body is provided with a gate trench, and a trench gate structure is located in the gate trench. The semiconductor body further comprises a first region of the first conduction type, a well region of the second conduction type and a second region of the second conduction type, and the second region and at least part of the first surface are connected with a source electrode of the semiconductor device to form Schottky contact. The Schottky contact reduces the conduction voltage drop, reverse recovery time and reverse recovery energy consumption of the semiconductor device, enhances the conduction performance and surge current resistance of the body diode, avoids the problem that holes enter a drift layer in the follow current process, reduces the risk of double-click degradation of the device, avoids an external follow current diode, and improves the reliability of the device. Therefore, the circuit design complexity and the system cost are reduced.

The invention discloses an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and a preparation method thereof, and the MOSFET device comprises a substrate, an epitaxial layer located above the substrate, a drain electrode located below the substrate, a current expansion region located in the epitaxial layer, a well region located above the current expansion region, a source region located in the well region, and a body region located in the source region, the grooves are formed in the two ends of the epitaxial layer, the gate groove is formed in the center of the epitaxial layer, the gate dielectric layer is located in the grooves and the gate groove, the polycrystalline silicon is located on the surface of the gate dielectric layer, and the passivation layer is located on the upper surface of the epitaxial layer. The trench gate injection region is introduced into the MOSFET device and can be used for modulating an internal electric field of the device, so that gate-oxide breakdown is protected, meanwhile, the effective conduction area of the device can be increased, and the conduction capability of the device is improved. The device structure and the preparation method are simple, the effect is remarkable, high-performance and batch preparation and production of the groove type SiC MOSFET device can be achieved, and the device has huge market potential and wide application prospects.

The invention discloses a trench gate silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and a manufacturing method thereof, and relates to the technical field of power semiconductor devices. An epitaxial layer is arranged on the substrate, and a drain electrode is arranged below the substrate. The gate trench is arranged above the epitaxial layer, the two sides of the gate trench are multi-stage gate trench integration regions, and the interlayer dielectric and the source electrode are arranged on the gate trench integration regions. Polycrystalline silicon and gate media are arranged in the gate trenches, the multi-stage gate trench integration region comprises a connection region, the multi-stage gate trenches and a current expansion layer, a shielding layer is arranged at the bottom, and the polycrystalline silicon and the gate media are arranged in the multi-stage gate trench integration region. The source electrode is connected with the drain electrode through the connecting region and is isolated from the multi-stage gate trench through the interlayer dielectric, the shielding layer is of the second conduction type, and the rest are of the first conduction type. When the device is blocked, the electric field at the gate dielectric is reduced by applying zero or negative gate voltage, and the JFET effect is inhibited by applying positive gate voltage when the device is conducted, so that the conduction capability is improved, and the loss is reduced. During avalanche, the multi-stage groove structure moves down a breakdown point, the heat transfer path is prolonged, metal melting is delayed, and avalanche robustness is enhanced.

The utility model relates to an improvement of a groove type IGBT semiconductor device structure, in particular to a SiC-based split gate groove type IGBT semiconductor device structure, which can be used for manufacturing a SiC-based IGBT semiconductor device with higher current density on the premise of not increasing the difficulty of the existing process and the manufacturing cost. Comprising a first conductive type substrate (1); the second-type conductive buffer layer (2) is arranged at the upper part of the first-type conductive substrate (1); a second conductivity type drift layer (3) disposed above the second conductivity type buffer layer (2); the first-type conductive doped region (4) is arranged on the upper surface of the second-type conductive drift layer (3); the second-type conductive doped region (5) is arranged on the local upper surface of the first-type conductive doped region (4); and the groove (6) is arranged on the upper surface of the second conductive type drift layer (3) and penetrates through the first conductive type doped region (4) and the second conductive type doped region (5), and the groove (6) extends into the second conductive type drift layer (3).

This invention proposes a graphene film-based photoconductive semiconductor switch and its application method. It includes a substrate, a graphene film layer, a semiconductor layer, a first electrode, a second electrode, and a light incident window. The substrate is an insulating, high-temperature resistant substrate with the semiconductor layer fixedly attached to its top surface. The graphene film layer covers the top surface of the semiconductor layer, forming an ohmic contact between the graphene film layer and the semiconductor layer. This invention utilizes the excellent conductivity of graphene to form an ohmic contact between the graphene film layer and the semiconductor layer, effectively reducing the switch's on-resistance and improving its conduction efficiency. Simultaneously, the ultra-thin structure of the graphene film layer enhances laser absorption efficiency, improves the switch's laser trigger sensitivity, and shortens the response time. The substrate is made of insulating, high-temperature resistant alumina ceramic material, which improves the switch's high-temperature stability and insulation performance, extending its service life. The overall structure is simple, cost-controllable, and highly practical, showing significant improvements in response speed, conduction performance, and stability.

The invention discloses a saw-tooth bonding type light sensation packaging structure capable of directly receiving and emitting light. The saw-tooth bonding type light sensation packaging structure comprises a first chip, a second chip, a third chip, a saw-tooth bonding surface and an electrical connection structure, the third chip is arranged on the top surface of the second chip, a first open hole and a second open hole are formed in the third chip at intervals, and the first open hole penetrates through the third chip along the thickness direction of the third chip, so that the light receiving and transmitting end of the second chip is positioned in the first open hole; the first chip is arranged on the top surface of the second chip and embedded in the third chip, and the light receiving and emitting end of the first chip is located in the second opening; the sawtooth bonding surface is arranged on the bottom surface of the second chip, so that the second chip is electrically connected to the product through the sawtooth bonding surface, and the second chip, the first chip and the third chip are conducted through the electrical connection structure. The invention relates to the technical field of optical sensing packaging, and can solve the problems that in the prior art, an optical sensing packaging structure is large in size and poor in heat dissipation function, and the light transmission effect is affected.

This application discloses a PCB interconnect structure for reducing carbon film resistance. The PCB interconnect structure for reducing carbon film resistance includes: a conductive carbon film and a substrate film; a copper foil contact assembly is disposed between the conductive carbon film and the substrate film; the copper foil contact assembly includes an upper copper foil and a lower copper foil, the upper copper foil being fixedly disposed at the conductive carbon film, and the lower copper foil being fixedly disposed at the substrate film. In order to solve the problem that the carbon film button produced by ordinary manufacturing process has a high carbon film resistance due to process problems in the prior art, this application designs a copper foil contact assembly. By setting the copper foil contact assembly, the conductivity of the conductive current can be effectively enhanced during use, and at the same time, a support structure is set to ensure the support gap between the conductive carbon film and the substrate film, thereby greatly reducing short circuits caused by accidental contact, and the use effect is better.

The utility model relates to a chip structure capable of improving ACF conductive particle capture rate, which belongs to the technical field of chips and comprises a chip electrode and various types of protrusions arranged on the surface of the chip electrode, a plurality of conductive particles are captured on the chip electrode, the height of each protrusion is H, 50 nm < = H < = 2 / 3 d, d is the diameter of each conductive particle, and the diameter of each conductive particle is larger than or equal to 50 nm. Different protrusions are designed on the chip electrode, the effect of preventing the conductive particles from flowing is achieved, the capture rate of the chip electrode on the ACF conductive particles is increased, the number of particles captured on the surface of the chip electrode is increased on the premise that the density of the ACF conductive particles is not increased, and the risk of short circuit can be reduced while the conduction performance is improved.

The invention discloses a data line, which belongs to the technical field of data lines, comprises a line body and connecting plugs at the two ends of the line body, the two ends of the line body are electrically connected with the connecting plugs, and is characterized in that a first body and a second body switch the charging state, the data transmission state and the charging data transmission state of the data line through a switching mechanism; the data line has the beneficial effects that the switching mechanism is creatively arranged, switching of the charging state, the data transmission state and the charging data transmission state of the data line is achieved, the core wire connection mode in the line body can be changed, three modes of only charging, only data transmission and simultaneous charging data transmission can be achieved, only charging is achieved, and only data transmission is achieved. And only the core wires are connected in parallel in pairs during data transmission, so that the resistance of the core wires is reduced, the current is increased under the condition that the input voltage is not changed, the charging efficiency and the data transmission efficiency are improved, and the use requirements are well met.

The present invention discloses a capillary hollow metal microneedle, characterized in that it is an eccentric capillary hollow metal microneedle, comprising a needle rod and a needle tip, the upper surface of the needle tip is an elliptical plane section inclined at an acute angle to the axis of the needle rod, the top of the upper surface is a pointed top, and the bottom is a pointed bottom; the inside of the needle rod is provided with a cylindrical through hole that penetrates up and down along the length direction to form a hollow structure, the needle rod and the axial center of the through hole are eccentric, and the axis of the through hole is translated to the side of the pointed bottom to a set distance, so that the wall thickness of the needle rod near the pointed top is not less than 1.2 times the wall thickness of the needle rod near the pointed bottom, so as to significantly improve the axial strength and electrical and thermal conductivity of the wall of the needle rod near the pointed top. The present invention also discloses an array chip using the capillary hollow metal microneedle and its application. The present invention improves the mechanical strength, liquid conduction ability, electrical and thermal conductivity of the microneedle through the eccentric structural design of the needle rod and the center of the through hole, and expands the scope of application.

The invention provides a display panel, a display device and a preparation method of the display panel, the display panel comprises a substrate, an isolation structure, a protection part, a light-emitting function layer and a first electrode layer, the isolation structure is arranged on one side of the substrate, the isolation structure can form an isolation opening in a surrounding mode and comprises a conductive structure, and the protection part covers the isolation structure. The light-emitting functional layer is arranged on one side of the substrate, and the light-emitting functional layer comprises a light-emitting structure arranged corresponding to the isolation opening. The first electrode layer is located on the side, away from the substrate, of the light-emitting function layer and comprises a first electrode arranged corresponding to the isolation opening, and the first electrode is electrically connected to the conductive structure through the protection part. According to the embodiment of the invention, the adverse effect of the etching process corresponding to the light-emitting structure and the first electrode on the isolation structure can be reduced, so that the structural integrity of the isolation structure is improved.

The utility model discloses a separated spray dust removal tower which comprises a tower body, a plurality of groups of spray pipes and spray heads, a sedimentation tank arranged at the bottom of the tower body, a spray pump communicated with the spray pipes, and spray isolation components arranged between the adjacent spray pipes. The spraying isolation assembly comprises an annular water collection tank, a water baffle arranged above the through hole, a water drainage pipe communicated with the water collection tank and a plurality of supporting pieces, the water collection tank is used for collecting spraying liquid on the upper layer, the water baffle is arranged above the through hole in a suspended mode and prevents the spraying liquid from directly dripping to the lower layer, and the water drainage pipe introduces the collected liquid into the sedimentation tank. By means of the structure, liquid physical isolation of different spraying intervals is achieved, meanwhile, vertical and smooth flowing of flue gas is kept, the dust removal efficiency is improved, interlayer interference is avoided, and the device has the advantages of being simple in structure, high in adaptability, stable in operation and the like and is suitable for various industrial flue gas treatment scenes.

The invention discloses a method for improving hole concentration in a p-type compound semiconductor. Comprising the following steps: in the growth process of a p-type doped compound semiconductor epitaxial layer, co-doping and introducing a certain concentration of compensating impurity elements used for inhibiting intrinsic donor type point defects in a compound semiconductor; after growth of the p-type doped compound semiconductor epitaxial layer is completed, annealing treatment is carried out in a protective atmosphere containing non-metallic elements in the compound semiconductor; wherein the hole concentration of the epitaxial layer is improved through the combined action of the introduction of the compensating impurity element and the annealing treatment. According to the method disclosed by the invention, through a synergistic process of low-atomic-number same-family element doping and nitrogen-containing atmosphere annealing, synchronous improvement of the bulk material and the surface hole concentration is realized.

The invention provides a field effect transistor and a preparation method thereof. The field effect transistor comprises a substrate, an epitaxial layer on the upper surface of the substrate, a grid electrode, a first well region, a second well region, a first source region, a second source region, a source electrode and a drain electrode. The gate includes a lateral portion extending laterally within the epitaxial layer and a vertical portion extending from the lateral portion toward the substrate. A first well region in the epitaxial layer includes a first portion extending away from the vertical portion from a sidewall of the vertical portion and a second portion extending toward the substrate from a lower surface of the lateral portion. A second well region in the epitaxial layer extends away from the lateral portion from a sidewall of the lateral portion. A first source region in the epitaxial layer is on a side of the first well region away from the substrate. A second source region in the epitaxial layer is on a side of the second well region away from the substrate. The source electrode is located on the first source region and the second source region, and the drain electrode is located on the lower surface of the substrate.

The present application belongs to the technical field of power semiconductor devices, and relates to a self-bias split gate bipolar transistor and a manufacturing method thereof. The present application provides a bias potential for the split gate (11) through the potential of the floating P region (18), thereby forming the electron accumulation ability below the trench, enhancing the conductance modulation ability, and thus enhancing the forward conduction ability of the device. Compared with the traditional split gate structure, the diode and capacitor structure of the self-bias structure are integrated into the IGBT structure, which can simultaneously improve the conduction ability and switching performance of the device without affecting the device size and IGBT operation, eliminates the negative effects brought by the split gate, improves the switching loss and enhances the switching speed, optimizes the forward conduction ability of the device, and improves the compromise characteristics between the forward conduction voltage drop and the off-state loss of the device.

The invention provides a lithium metal composite negative electrode, a preparation method thereof and a solid-state battery. The lithium metal composite negative electrode is of a multi-layer structure and sequentially comprises a current collector, a strengthening layer, an active substance layer and a space functional layer, the strengthening layer is a current collector conductive and mechanical property strengthening layer, the active substance layer is a lithium metal and / or lithium alloy layer, and the space functional layer is a layer with a three-dimensional network material loose porous structure. In the spatial functional layer, a three-dimensional network structure provides storage space and deposition sites for lithium ions, the spatial functional layer has conductivity and can regulate and control uniform deposition and separation of metal lithium in the spatial functional layer, and a loose porous structure effectively inhibits growth of lithium dendrites. The space functional layer isolates direct contact between lithium metal and the solid electrolyte and serves as a middle layer to reduce generation of side reactions, and the metal lithium solid-state battery is promoted to achieve the application target of high power and long circulation.

The utility model discloses a magnetic switch structure which comprises an iron core and at least two sections of windings, the at least two sections of windings are arranged on the iron core, each section of winding is made of wide thin copper foil, the winding directions of the at least two sections of windings are the same, and the at least two sections of windings are connected in series. And the first end of the first section of winding and the second end of the last section of winding in the at least two sections of windings are respectively connected with an external circuit. According to the scheme, the wide thin copper foil is adopted to manufacture the winding, the at least two sections of windings are arranged on the iron core to realize the magnetic switch, the thin copper foil can overcome the skin effect and improve the conduction capability, and the problem that the magnetic switch is difficult to realize large current due to winding of a single-strand or multi-strand enameled wire is solved.

The invention discloses a switch panel capable of avoiding poor contact. The switch panel comprises a base, an upper cover, a panel, a button, a button panel and a conduction assembly, wherein the upper cover and the panel are mounted on the base; the button is movably mounted on the upper cover; the device is characterized in that a conduction push rod for pushing the conduction assembly to move to improve the conduction effect is slidably mounted in the base; the two ends of the button are detachably provided with conduction driving rods penetrating through the two ends of the conduction push rod correspondingly. A guide boss for pushing the conduction push rod to move is arranged on the conduction driving rod; and the button is also provided with an elastic fixing piece for fixing the conduction driving rod. According to the invention, the button is pressed, the button drives the corresponding conduction driving rod to move downwards, the conduction driving rod is in contact with the conduction push rod along with the guide boss on the conduction driving rod, the conduction push rod is pushed to slide, and the conduction push rod pushes the conduction assemblies to move, so that the conduction effect between the conduction assemblies is improved, and the condition of poor contact is prevented.

The composite current collector provided by the utility model comprises a compact conductive layer, the compact conductive layer is provided with insulating support layers on two opposite side surfaces in the thickness direction of the compact conductive layer, the insulating support layers are provided with open structures, and the open structures penetrate through the insulating support layers along the thickness direction of the insulating support layers. The composite current collector disclosed by the utility model has relatively high mechanical property and mechanical property, and simultaneously has good conductivity and current collection performance, so that the preparation yield and the reliability of the composite current collector, the electrode pole piece and the electrochemical device in the using process can be improved, and the electrochemical device is enabled to have relatively high electrochemical performance; the material has high weight energy density, and the preparation method is simple and efficient in process.

The application discloses an ultrasonic probe, an ultrasonic imaging system and a preparation method. The ultrasonic probe comprises a transducer assembly, and the transducer assembly comprises a matching layer, a piezoelectric layer having opposite first and second surfaces, the second surface of the piezoelectric layer being connected to the matching layer, the piezoelectric layer comprising a plurality of array elements arranged in an array, a flexible circuit board comprising an insulating substrate and a plurality of conductive parts, the insulating substrate being connected to the first surface of the piezoelectric layer, the plurality of conductive parts being arranged on the side of the insulating substrate facing the piezoelectric layer, a backing connected to the side of the insulating substrate away from the piezoelectric layer, a conductive adhesive used for bonding the insulating substrate and the piezoelectric layer, the conductive adhesive comprising a plurality of conductive particles, the conductive particles being used for conducting the array elements and the conductive parts, and a containing structure used for containing the conductive particles and limiting the movement of the conductive particles, the first surface of each array element being provided with the containing structure, so that the first surface of each array element is conducted with one conductive part, and the conduction rate of the array elements is improved.

The embodiment of the present invention relates to an electrostatic protection circuit design, and discloses an electrostatic protection circuit, including: an electrostatic protection module; an input and output terminal, a power supply terminal, and a ground terminal; the electrostatic protection module includes a first NMOS transistor, a first capacitor, and a first resistor, the source and substrate of the first NMOS transistor are both connected to the input and output terminal, and the drain is connected to the ground terminal; the first end of the first capacitor is connected to the ground terminal, and the second end is connected to the gate of the first NMOS transistor; the first end of the first resistor is connected to the input and output terminal, and the second end is connected to the gate of the first NMOS transistor. In the present invention, the electrostatic protection circuit can effectively realize the electrostatic protection of the internal circuit without affecting the operation of the internal circuit.

The utility model discloses a kind of motor terminal board assemblies facilitating processing, including plastic encapsulation ring, the plastic encapsulation ring is equipped with upwardly extending three-phase groove and radially extending terminal hole;The terminal board assembly further includes three conductive sheets, each The conductive sheet includes conducting ring and multiple wire claws and a three-phase copper sheet arranged on the conducting ring, the conductive sheet is embedded in the plastic encapsulation ring, wire claw is stretched out from terminal hole, three-phase copper sheet is stretched out upwardly from three-phase groove;The wire claw includes terminal body from the root of conducting ring and extension hole formed by stamping from terminal body;The plastic encapsulation ring is insulating ring, and the three-phase groove of the plastic encapsulation ring can wrap the three-phase copper sheet.The utility model structure design is reasonable, extension hole at wire claw is formed using the mode of stamping forming, production efficiency is high, product yield is high, and the conductivity of wire claw and wire after extrusion welding is high.

The utility model discloses a high conductivity and stable charging wire, which comprises a cable, a first connector and a second connector, the first connector and the second connector are arranged at two ends of the cable, the first connector at least comprises an insulating shell and a terminal arranged in the insulating shell, the terminal is fixed and conducted with a PCB (printed circuit board) in a welding manner, the PCB is fixed and conducted with the cable in a welding manner, and the second connector is connected with the cable in a welding manner. The rear end of the terminal is provided with a first pin and a second pin which are bent downwards and distributed in parallel, and the PCB is provided with a first annular bonding pad and a second annular bonding pad corresponding to the first pin and the second pin. And the first pin and the second pin are respectively inserted into the first welding hole of the first annular bonding pad and the second welding hole of the second annular bonding pad from top to bottom, and are welded and fixed through soldering tin, so that stable connection between the terminal and the PCB can be ensured, and meanwhile, the high conduction performance can be enhanced, so that the terminal has extremely strong market competitiveness.

The invention relates to the technical field of solar cells, and discloses a back contact laminated solar cell and a cell module. The cell comprises a substrate layer, a first carrier transport layer, a second carrier transport layer, a first light absorption layer and / or a second light absorption layer, a first electrode and a second electrode, wherein the substrate layer comprises a light receiving surface and a backlight surface; the first carrier transport layer is arranged in the first area of the backlight surface; the second carrier transport layer is arranged in the second region; the first light absorption layer with the band gap width larger than that of the substrate layer is arranged on the light receiving surface; the second light absorption layer with the band gap width smaller than that of the substrate layer is arranged on the backlight face, the first electrode is connected with the first carrier transmission layer, and the second electrode is connected with the second carrier transmission layer. The first light absorption layer and the second light absorption layer can be arranged on the light receiving face and the backlight face respectively, band gaps are gradually decreased from top to bottom, absorption of light of different wave bands can be enhanced, and the photoelectric conversion efficiency and the power generation performance are improved.

The utility model relates to a hanging shaft type portal crane grounding device which comprises a grounding box used for being fixed with a portal crane moving frame, a guide sleeve is arranged in the grounding box, a hanging shaft is connected in the guide sleeve in a sliding mode, and the lower end of the hanging shaft penetrates through a bottom plate of the grounding box and then is connected with a grounding copper plate. A pressure spring is arranged between the grounding copper plate and the bottom plate, the bottom of the grounding copper plate is a sliding contact bottom surface, the periphery of the sliding contact bottom surface is a sliding contact inclined surface which is inclined towards the outer upper direction, and a cable plug connector is arranged on the grounding box, so that a grounding cable is connected with the hanging shaft through the cable plug connector. The hanging shaft type portal crane grounding device has good current conductivity, the bearing damage risk existing in a wheel direct grounding mode is avoided, the situation that a tension spring type contact shoe is clamped cannot occur, and the hanging shaft type portal crane grounding device is safe and reliable.

The utility model relates to the technical field of communication lines, and discloses a communication line from a mainboard to an Android screen, which comprises a storage box, a communication line and terminals, the storage box is integrally in the shape of a rectangle with smooth edges, two sides of the storage box are provided with terminal grooves for accommodating the terminals, and the terminal grooves are communicated with the communication line. The terminal grooves are formed in the two sets of terminals, grooves corresponding to the terminals are formed in the positions, corresponding to the terminals, in the terminal grooves, the two sets of terminals are fixedly connected together through a communication line, the device further comprises a winding assembly, through introduction of the winding assembly and specific structural design, the problems of good connection firmness and conduction performance of the terminal punch are effectively solved, and the service life of the terminal punch is prolonged. And more stable and reliable communication experience is provided for the user, and the method is more practical.

The utility model discloses a kind of U-shaped convergence branch line clamps, including the first connecting piece and the second connecting piece of U-shaped, the second connecting piece is slid in the first connecting piece opening along cable passing direction, and fixed cable is formed with surrounding structure, the opening of the first connecting piece is set as cladding area, the second connecting piece is set with the area of sticking away from the side of first connecting piece, and cladding area is adhered with the area of sticking after pressure bonding by mould;The utility model is simple in structure, reasonable in design, by setting the first connecting piece and the second connecting piece, the first connecting piece and the second connecting piece form wire slot structure to accommodate cable after splicing, and the pull-off force between the first connecting piece and the second connecting piece is enhanced, and the connection strength is improved.

The invention belongs to the technical field of high-voltage high-power pulse power switches, and particularly relates to a laser trigger gap series multi-gap vacuum switch with non-uniform gaps. The switch comprises a laser trigger gap, a self-breakdown gap and a laser trigger system; the end part of the cathode conducting rod of the laser trigger gap is of a screw rod structure, the end part of the anode conducting rod of the multi-stage self-breakdown vacuum gap is of a nut structure, and the two gaps are connected by adopting a modular thread structure; according to the invention, a laser trigger vacuum gap and multi-stage self-breakdown vacuum gap series connection technology is adopted, and the gap lengths of the self-breakdown gaps are increased stage by stage, so that the conduction time of the first stages of self-breakdown gaps is effectively shortened, and the conduction performance of the switch is improved; high-voltage non-inductive resistors (coupling resistors) are connected to the two ends of each gap in parallel to regulate and control voltage division between self-breakdown gaps, so that the higher the stage number is, the larger the voltage division of the vacuum gaps is, the shorter the breakdown time is, and the conduction of the front vacuum switch is further accelerated.

The invention belongs to the technical field of anisotropic conductive adhesive films, and relates to an anisotropic conductive adhesive film as well as a preparation method and application thereof. The anisotropic conductive adhesive film with the high capture rate is processed from the following raw materials in parts by weight: 20-40 parts of rubber, 5-20 parts of epoxy resin, 2-25 parts of an acrylate phosphate monomer, 1-10 parts of an initiator, 2-10 parts of insulating conductive particles and 5-40 parts of filling particles, the insulating conductive particles are conductive particles coated with a polymer insulating layer. According to the invention, the insulating conductive particle with a three-layer structure is adopted, and the outer layer is a polyacetylene polymer insulating layer. Due to the fact that double bonds exist in the polyacetylene outer layer, the polyacetylene outer layer can generate a synergistic effect with acrylate phosphate monomers introduced into a conductive adhesive formula system for linkage, the capture rate of conductive particles can be increased in the Bonding process, the poor appearance of a product is reduced, and performance improvement is achieved.

The invention belongs to the technical field of cement-based batteries for buildings, and discloses a bearing and energy storage integrated cement-based structure battery and a preparation method thereof. The method comprises the following steps: 1) mixing a polymer solution, cement and fine sand to obtain a polymer-cement paste electrolyte; the polymer solution is obtained by dissolving a polymer and a strong base in water, or dissolving a polymer, a strong base and a sulfide in water, or dissolving a polymer, a strong base, an inorganic sulfide and a chemical cross-linking agent in water; the polymer is more than one of PVA or PAA; (2) preparing a positive plate; (3) preparing a negative plate; and 4) respectively placing the polymer-cement paste electrolyte on the surface of the positive plate and the surface of the negative plate, sequentially stacking the positive plate and the negative plate, placing the stacked positive plate and negative plate in a mold for maintenance, and standing to obtain the bearing and energy storage integrated cement-based structure battery. The cement-based structure battery has the advantages of high mechanical bearing strength, high capacity, stable electricity holding and excellent cycle performance.