249results about How to "Improve conduction performance" patented technology

The invention discloses a preparation method of a ceramic coating separator for lithium ion batteries and belongs to the technical field of lithium ion battery separator production. The method involves a polymer porous base film, a polymer glue applied on one or both sides of the base film surface, a ceramic coating applied on the surface of the polymer glue, and a PVDF and its copolymer glue applied on the other side of the ceramic coating surface and the base film surface, wherein the PVDF and its copolymer glue are coated on the other side of the ceramic coating surface and the base film surface. The inorganic ceramic particles adopted by the invention are non-spherical and multi-particle, which can greatly improve the porosity of the ceramic coating, increase the lithium ion transit property, improve the liquid absorption rate of the diaphragm, and improve the rate performance and cycle life of the lithium ion battery. As the structure design of the ceramic coat diaphragm of the invention can increase the adhesive force of the ceramic coating and the polymer porous base membrane, the adhesive strength of the diaphragm and the positive and negative electrode sheets is improved,the problems of powder dropping and coating peeling off are effectively improved, the high-efficient automatic assembly of the lithium battery is realized, and the heat resistance and electrochemicalstability of the diaphragm are greatly improved.

The invention relates to a flexible conductive composite fabric, and preparation and application thereof. The flexible conductive composite fabric comprises a conductive composite film (1), a base fabric (2) and an adhesive (3), wherein the base fabric (2) is adhered on the upper and lower surfaces of the conductive composite film through the adhesive (3); and two ends of the conductive composite film (1) are respectively adhered with an electrode. The flexible conductive composite fabric is prepared through the following steps: impregnating a carbon nanotube thin film in a graphene suspension, then taking the carbon nanotube thin film out of the graphene suspension, and carrying out drying in the air so as to obtain a carbon nanotube/graphene composite film; allowing a polyaniline nanowire array to grow in situ on the surface of the carbon nanotube/graphene composite film so as to obtain a carbon nanotube/graphene/polyaniline composite film; and respectively adhering an electrode at two ends of the composite film, coating the base fabric on the upper and lower surfaces of the composite film through the adhesive, and carrying out curing so as to obtain the flexible conductive composite fabric. The prepared conductive fabric provided by the invention has good conductivity, can reach 103 S/m to 105 S/m, can bear a certain degree of bending and compressive deformation, and is extensively applied in the fields of intelligent textile structures and intelligent materials.

The invention discloses a heavy-current whole-wafer total-pressure-contact flat-plate encapsulated IGBT (Insulated Gate Bipolar Transistor) and a manufacturing method thereof. The heavy-current whole-wafer total-pressure-contact flat-plate encapsulated IGBT comprises an IGBT whole wafer and a total-pressure-contact flat-plate encapsulation, the whole wafer comprises multiple independent IGBT device regions, each IGBT device region is composed of multiple IGBT units which are connected in parallel, collectors of all the IGBT device regions are connected in parallel to form a total collector, atransmitter is led from each IGBT device region independently, gate poles of all the IGBT device regions in a normal operating state are connected to a total gate pole arranged in the center of the wafer by using an interconnecting line, and the transmitter of each IGBT device region is connected with a metal electrode plate of a total transmitter in parallel by virtue of a metal gasket of the transmitter. According to the invention, a heavy-current IGBT whole wafer device is realized, the advantages of high working voltage, low switching power consumption and simple voltage control of the gate pole are maintained, current carrying capacity, heat-conducting property, heat shock resistance and long-term reliability of the device are improved, and the problem of property matching between IGBT units is solved.

Provided is a superspeed heavy current LIGBT, relating to the semiconductor power device. The superspeed heavy current LIGBT comprises a silicon substrate, and a drift region, a channel region, an ohmic contact heavily doped region, a cathode, a grid medium, an anode leading-out wire, a grid, a cathode leading-out wire and an anode which are all arranged above the silicon substrate and buried oxide. The drift region is provided with an electric field strengthening unit on the upper surface of the portion between the anode and the channel region; and the electric field strengthening unit is used for generating an electric field pointing to the lower surface of the electric field strengthening unit from the anode, and is isolated from the drift region through an insulating medium. The superspeed heavy current LIGBT improves the conduction performance and switching performance of an LIGBT device.

The invention provides an electrostatic locking vertical sensitive micromechanical inertial switch which comprises an insulating substrate, array fixation electrodes, a pull-in electrode, a mass block, conjoined serpentine springs, spring fixation bearings and a reverse limit stop structure. The array fixation electrodes are formed by a graph array through layout wiring, is insulated from the pull-in electrode through air gaps, and is located on the insulating substrate. The mass block is connected with four conjoined serpentine springs, forms a suspended movable structure through the spring fixation bearing, and is located above the plane of the fixation electrodes and the pull-in electrode. The reverse limit stop structure is suspended above the mass block. According to the invention, the fixation electrode array is used; through in-plane multi-point layout, the conducting possibility of the fixation electrodes and the mass block is greatly improved; the pull-in electrode and the mass block are under electrostatic attraction, which can arbitrarily prolong contact time and improve contact performance; the reverse limit stop structure can effectively suppresses the large deformation of the mass block in a non-sensitive direction, which improves the stability of the device.

The invention relates to a high-vacuum low-temperature container molecular sieve adsorbing device and a filling process thereof. The high-vacuum low-temperature container molecular sieve adsorbing device comprises an inner container and an outer container, wherein the inner container is provided with a process manhole and the outer container is provided with an anti-explosion hole. The filling process comprises the steps of: charging nitrogen in an adsorbing agent containing container to reach pressure atmosphere, and then opening the anti-explosion hole, connecting a vacuumized rubber pipe, connecting a corrugated pipe with a molecular sieve, starting a vacuum pump, slowly opening a feeding valve, enabling a molecular sieve adsorbing agent to continuously flow into a molecular sieve device under the action of negative pressure, after the molecular sieve adsorbing agent is filled with the molecular sieve device, dismantling the corrugated pipe, then plugging the corrugated pipe with ascrew plug, finally, stopping the vacuum pump, unplugging the vacuum rubber pipe, and closing the anti-explosion hole, and ending the filling of the whole molecular sieve adsorbing agent. The invention has the characteristic of better adsorbing effect, and has the advantages of increasing the load capacity of the whole vehicle, saving the cost, being more convenient for maintenance, improving thewhole quality of a low-temperature container, improving the labor intensity and the operation environment of workers, enhancing the production efficiency, and being convenient and simple in replacingthe molecule sieve.

The invention discloses a manufacturing method for a front electrode of a crystalline silicon solar battery, and the method comprises the following steps: on the basis of using a mixture of indium-gallium alloys with a low melting point and copper powder as a composite slurry, carrying out laser grooving on the front electrode region of a silicon slice so as to prepare a selective emitting electrode; then printing the composite slurry in the grooving region by utilizing a high-standard silk-screen printing process; and finally, carrying out the low-temperature sintering at 300-400 DEG C to form the front electrode. Compared with the prior art, the manufacturing method disclosed by the invention has the advantages that the manufacturing cost can be lowered, the sintering temperature is reduced, and the quality of a product is improved, thus the manufacturing method has important industrialization prospects in the field of crystalline silicon solar batterys.

The invention relates to a circuit, and especially relates to a detection feedback circuit. The detection feedback circuit comprises a field effect transistor and a resistor R1, wherein a control electrode of the field effect transistor connects the resistor R1, and a source or drain electrode of the field effect transistor connects a control circuit. The detection feedback circuit is characterized by also comprising a thermistor, wherein the control electrode of the field effect transistor connects the thermistor. The invention is aimed at monitoring components temperature in real time and carrying out feedback control on components work voltage or current to stabilize work voltage or current of the components, guarantee normal work voltage or current of the components, prevent a temperature of the components working environment from rising too high, avoid damage of the components and prolong the service life of the components.

The invention discloses a portable angle-adjustable type electronic screen test fixture. The portable angle-adjustable type electronic screen test fixture comprises a mounting seat and a rack, whereinthe rack is hinged with the mounting seat through a hinged shaft; an angle adjusting device is arranged between the mounting seat and the rack; a PG test box, a carrier and a POGO conduction device are arranged on the rack; the PG test box is electrically connected with the POGO conduction device; the carrier is of an integrated plate-shaped structure; a support boss and limiting structures are arranged on one side surface of the carrier; the limiting structures are arranged on the periphery of the support boss; each limiting structure comprises a guiding groove formed in the surface of the carrier and a limiting block connected into the guiding groove in a sliding fit manner, and the limiting block is connected with the carrier through a positioning structure. The fixture is simple in structure and convenient to carry, and can be applicable to lighting tests of electronic screens with various sizes on the premise that the carrier is not replaced integrally.

The invention discloses an insulating piercing wire clamp, and the wire clamp consists of a wire clamp core assembly and a wire clamp case assembly. The wire clamp core assembly can stretch out and draw back laterally, and the left and right side walls of the wire clamp core assembly are respectively provided with a cable duct. The interior of the wire clamp core assembly is provided with N wire holes and N wire seats. There are N metal wires, and the spiral telescoping parts of the metal wires are respectively disposed in the wire seats. Two piercing pointed ends at two sides of each spiral telescoping part respectively stretch into two cable ducts. The wire clamp case assembly comprises a left case and a right case, and the inner sides of the bottoms of the left and right cases are respectively provided with a wire pressing groove. The left case is clamped outside the right case, and there is a guide non-return mechanism between the left and right cases. Two groups of opposite wire pressing grooves and the cable ducts enable a main cable and branch cables to be clamped firmly, and each metal wire enable the main cable to be connected with the branch cables. After the insulating piercing wire clamp is installed, the insulating piercing wire clamp is good in sealing performance, is low in contact resistance, is high in stability, and can carry out the buffering of deformation and strain changes caused by temperature difference. Therefore, the insulating piercing wire clamp is long in service life, is stable in operation, is low in cost, and is convenient to install.

The invention relates to the technical field of semiconductor device fabrication, in particular to a high-performance normally-off GaN field effect transistor and a preparation method thereof. The device includes a substrate, an epitaxial layer, a gate dielectric layer, a gate pole, a drain pole and a source pole grown on the substrate. The epitaxial layer includes an epitaxially grown stress buffer layer and a GaN channel layer, masks are only retained in a gate region by mask patterning and etching processes, after mask residues and surface smears in an access region are removed by in-situ etching, an AlGaN/GaN heterojunction structure is grown in a selective region to form a trench channel. A gate metal covers the trench channel, both ends of the transistor form a source region and a drain region, and metals cover the source region and the drain region to form the source pole and the drain pole. The structure of the high-performance normally-off GaN field effect transistor is simple, the preparation process is simple and reliable, the in-situ etching of the access region can reduce defect impurities introduced in the access region of the transistor in a mask preparation process,thereby obtaining a high-quality access region interface and ensuring the secondary epitaxial AlGaN/GaN heterojunction structure quality so as to improve the conduction performance of the normally-off GaN field effect transistor.

The invention belongs to the technical field of high voltage and high power pulse power switch, in particular to a laser triggered multistage vacuum switch. The laser triggered multistage vacuum switch comprises a laser triggered vacuum clearance, a multistage self-breakdown vacuum clearance and a trigger system; the multistage self-breakdown vacuum clearance is fixed to the upper end of the lasertriggered vacuum clearance through the fastening connecting parts; and a pressure equalizing ring is covered outside the upper insulating shell. According to the invention, the series technique of the laser triggered vacuum clearance and the multistage self-breakdown vacuum clearance is adopted, and the laser triggered vacuum clearance and the multistage self-breakdown vacuum clearance are coordinated each other to achieve the application of the laser triggered multistage vacuum switch in a high voltage, high repetition frequency and high power pulse power system; and multiple channels of laser are used to bombard the trigger target material simultaneously, therefore, the affect area of the laser on the target material is increased, more initial plasmas are generated, and the conduction performance of the laser triggered vacuum switch is further improved. Using the laser triggered multistage vacuum switch, the complex process and high cost required by long term maintenance is avoided.

The invention relates to the technical field of power system capacitors and particularly relates to a cooling and heat radiation structure of a capacitor, which comprises a cooling mechanism, a heat radiation mechanism and multiple parallel capacitor elements, wherein the capacitor element is coated with a layer of insulating paper; the cooling mechanism comprises a water tank and a water pipe; one side of the water tank is communicated with the water pipe, and the other side of the water tank is provided with a sliding piston; the water pipe is wound on the capacitor element coated by the insulating paper; the heat radiation mechanism comprises a power supply, a fan, a paper plate and a paper plate groove; the paper plate, the fan and the power supply are connected by wires; the fan is fixedly connected with a rotating shaft; the rotating shaft is connected with a speed reduction gear set through an input shaft; the output shaft of the speed reduction gear set is connected with a threaded rod; the threaded rod is connected with a casing; and the casing is fixedly connected onto the piston. The capacitor is cooled by using the water pipe to be wound on the capacitor and water to flow in the water pipe, the fan is also rotated, and the cooling and heat radiation effects of the capacitor are further enhanced.

The invention discloses a display device which comprises a display panel, a circuit substrate, a grounding pad and a conductive shell. The circuit substrate is in electrical connection with the display panel. The grounding pad is located on the circuit substrate. Slicing seams penetrate through the grounding pad and the circuit substrate. The slicing seams are provided with a plurality of contact parts on the grounding pad. The conductive shell is provided with a protruding portion which presses and bends the contact portions, so that the bent contact portions are attached to the protruding portion.

The invention discloses a method for interconnecting back faces of wafer level chips during packaging. Blocking materials on a wafer welding cushion are removed through laser etching, a certain area of surface of the welding cushion is exposed to be connected with a metal wiring layer, and electricity of an element area is led to the back faces of wafers. Through the method that the blocking materials on the welding cushion are removed directly through laser etching, the process steps of photoresist coating, photo-etching exposure, developing, photoresist removing and the like are omitted; by selecting an appropriate laser wavelength, adjusting the laser focusing position, adjusting the energy, focus spot area, acting pulse number and other parameters of lasers acting at the bottom of a first opening and controlling laser etching to reach the surface of the welding cushion without penetrating through the welding cushion, a large area of the welding cushion is exposed. The method is convenient to operate, the contact area of the welding cushion and the metal wiring layer is enlarged, and conductivity is more reliable.

The invention provides an enameled wire coating-stripping-free quick connection process and relates to the technical field of the coating-stripping-free quick connection process. The enameled wire coating-stripping-free quick connection process comprises a single splicing clamp (1) and strip-shaped teeth (2), and a plurality of strip-shaped teeth (2) are evenly arranged on the inner wall of the splicing clamp (1). The enameled wire coating-stripping-free quick connection process is reasonable in design, and simple in structure, replaces traditional welding process, has quickand reliable connection and breakover effects, and is popularized and applied to motors of refrigeration compressors nationwide firstly and is popularized in a common motor industry at present.

The invention provides a layout method of a SiC JBS device, which comprises the following steps of: growing an epitaxial layer on the crystal surface of a silicon carbide substrate, and dividing an active region with a rectangular structure on the epitaxial layer, arranging a terminal protection region at the periphery of the active region, arranging a plurality of P-type regions in the active region, arranging the plurality of P-type regions in a multi-row and multi-column staggered manner, implanting ions into each P-type region, and arranging Schottky contact regions between the P-type regions, and depositing an ohmic contact metal layer on the back surface of the silicon carbide substrate to generate the SiC JBS device. The plurality of P-type regions are arranged in the SiC JBS devicein a multi-row and multi-column staggered manner, so that the reverse breakdown characteristic of the SiC JBS device is ensured, the Schottky barrier region area is increased, and the conduction capability is improved.

The invention provides silicon carbide groove-shaped metal-oxide-semiconductor field-effect transistors (MOSFETs) and a fabrication method thereof. Gate contact of the MOSFETs is arranged at a side wall of a main groove, source metal contact is formed at the bottom of the groove, electrons flow through an inversion layer at the side wall of the groove from bottom to top to form an inverse conduction channel different from traditional groove-shaped MOSFETs during positive conduction, a high electric field of a body region of a device is effectively shielded by the source metal contact at the bottom of the groove during reverse blocking, so that the gate dielectric field of the device is greatly reduced, and avalanche occurs at a PN junction of the body region of the device. The fabricated silicon carbide groove-shaped MOSFETs have relatively low positive conduction resistance and relatively high reverse blocking capability, and the static and dynamic working reliability of the device can be improved.