Thin film transistor, array substrate, and display device

Abstract

The invention provides a thin film transistor, an array substrate, and a display device. The thin film transistor consists of a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; the gate insulating layer is arranged between the gate electrode and the active layer; the source electrode and the drain electrode are respectively and correspondingly arranged at the two ends of the active layer; and the active layer is made of a metallic nitrogen-oxide material. Besides, the thin film transistor also includes a conductive oxygen vacancy reduction layer that is arranged between the active layer and the source electrode and / or is arranged between the active layer and the drain electrode; and the conductive oxygen vacancy reduction layer is used for carrying out oxygen vacancy reduction in the active layer. According to the thin film transistor, because the oxygen vacancy reduction layer is arranged, the number of oxygen vacancy units in the active layer is substantially reduced, thereby improving the transmission rate of the carrier; and the sub threshold swinging of the thin film transistor is also reduced and thus the conduction performance of the thin film transistor is substantially improved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a thin film transistor, an array substrate and a display device. Background technique [0002] Thin film transistors (TFTs) have been widely used in flat panel display devices due to their good switching characteristics. [0003] Generally, a thin film transistor includes a gate, an active layer, a source and a drain, and the source and the drain are respectively arranged at two ends of the active layer and are respectively in contact with the active layer. When the gate voltage is higher than its threshold voltage, the source and drain are turned on through the active layer, and carriers flow from the source to the drain or from the drain to the source. [0004] The active layer of the thin film transistor is usually formed of metal oxynitride materials, such as zinc gallium oxynitride, zinc indium oxynitride, zinc aluminum oxynitride, zinc oxynitride (ZnON) and the li...

AI Technical Summary

Problems solved by technology

When the thin film transistor is in the on state, the oxygen vacancies in the metal oxynitride will form a trap state for carrier transport, thereby reducing the rate of carrier transport and improving the subthreshold swing of the thin film transistor, the subthreshold swing Increase will seriously affect the conduction performance of thin film transistors

[0005] In addition, the contact resistance between the active layer and the source and drain is usually relatively large, which will also affect the transport of carriers, and eventually lead to a large subthreshold swing of the thin film transistor, which seriously affects the conductance of the thin film transistor. general performance

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