The invention discloses a
sulfuric acid etching process method, which comprises the following steps of: in an
etching process of a
silicon wafer, setting the initial proportioning amount of pure waterin an
etching tank to be 220+ / -50g / L, the initial proportioning amount of
hydrofluoric acid to be 100+ / -50g / L, the initial proportioning amount of
nitric acid to be 510+ / -50g / L and the initial proportioning amount of
sulfuric acid to be 220+ / -50g / L; the pure water supplementing amount of the etching tank is set to be 0 mL / piece, the
hydrofluoric acid supplementing amount is set to be 4.0+ / -2.0 mL / piece, the
nitric acid supplementing amount is set to be 5.0+ / -2.0 mL / piece, and the
sulfuric acid supplementing amount is set to be 1.5+ / -1.0 mL / piece; and according to the method, equipment (suitable for rollers of different types or tooth depths) does not need to be improved, sulfuric acid only needs to be supplemented in the primary preparation and production process of the etching groove,
polishing of the back face of the
silicon wafer and improvement of the
reflectivity can be achieved through comprehensive optimization and adjustment of the process temperature, the circulating flow andthe water film amount, then the purpose of improving the conversion efficiency of the
single crystal cell is achieved, and various electrical parameters of the prepared
silicon wafer completely meetthe original requirements, and the process is simple and easy to implement.