40results about How to "Improved Charge Injection" patented technology

An electrophotographic photosensitive member is provided by forming a photosensitive layer on an electroconductive support. The photosensitive layer is provided with particularly excellent durability while retaining good electrophotographic performances when formed as a layer comprising a polymerizate of a hole-transporting compound having at least two chain polymerization function groups in its molecule represented by formula (1) below:wherein A denotes a hole-transporting group, P1 and P2 independently denote a chain polymerization function group and Z denotes a bonding organic group; a, b and d are independently an integer of at least 0 satisfying a+bxd>=2 provided that if a>=2. plural groups P1 can be identical or different; if b>=2, plural groups Z can be identical or different; and if bxd>=2, plural groups P2 can be identical or different.

A method of patterning a functional material ( 150 ) onto a substrate ( 100 ) comprises the steps of (a) applying a layer of protective material ( 130 ), soluble in a solvent in which the functional material is insoluble, to at least one major surface of said substrate; (b) removing areas of said layer ( 130 ) to gain access to the substrate in well-defined regions; (c) depositing the functional material ( 150 ) at least onto the substrate in the well-defined regions; and (d) removing the remaining layer of protective material from the substrate by dissolution in said solvent.

The invention provides a pure inorganic perovskite light emitting diode device manufacturing method. The method comprises the following steps: (1) an ITO transparent conductive glass substrate is subjected to standardized cleaning and drying and then pretreatment; (2) the ITO is transferred to a vacuum cavity, and evaporation on a hole injection layer and a transport layer is carried out; (3) a dual source co-evaporation method is adopted, and a pure inorganic CsPbX3 perovskite light emitting layer thin film is formed through evaporation; (4) an infrared thermal radiation device is used to carry out thermal treatment on the CsPbX3 perovskite film; and (5) an electron transport layer, an electron injection layer and a metal cathode are formed through thermal evaporation. The manufacturing process is simple and convenient, the manufacturing difficulty is low, the full vacuum evaporation method is adopted to manufacture the device, the manufacturing is easy, the repeatability is good, and the device performance is stable; and through the dual source co-evaporation manufacturing method, the smoothness and the uniformity of the thin film are improved, replacement of a subject material and an object material is facilitated, the ratio of the two can be changed, and regulation on the position of a light emitting peak is realized.

Fast switching and fast settling is achieved in a phase locked loop ("PLL") containing a bandwidth switched active loop filter (8) by feeding the phase error signal of the phase detector (1) of the PLL to the non-inverting input of the amplifier (7) within the loop filter and having the electronic switch (17) control the loop filter bandwidth through changing the resistance (9, 11) to ground at the inverting input of the amplifier between a high and low value associated respectively with broad bandwidth and narrow bandwidth to the loop filter. Switching is possible in as little as one microsecond, and is accompanied by fast settling of the loop with minimal generation of phase/frequency perturbation. The foregoing PLL is of particular benefit in fast switching frequency synthesizers, such as used in frequency hopping frequency synthesizers of frequency and time division multiplexing systems.

Provided are a method for manufacturing a perovskite nanocrystal particle light-emitter where an organic ligand is substituted, a light-emitter manufactured thereby, and a light emitting device using the same. A method for manufacturing an organic-inorganic-hybrid perovskite nanocrystal particle light-emitter where an organic ligand is substituted may comprise the steps of: preparing a solution including an organic-inorganic-hybrid perovskite nanocrystal particle light-emitter, wherein the organic-inorganic-hybrid perovskite nanocrystal particle light-emitter comprises an organic-inorganic-hybrid perovskite nanocrystal structure and a plurality of first organic ligands surrounding the organic-inorganic-hybrid perovskite nanocrystal structure; and adding, to the solution, a second organic ligand which is shorter than the first organic ligands or includes a phenyl group or a fluorine group, thereby substitutes the first organic ligands with the second organic ligand. Thus, since energy transfer or charge injection into the nanocrystal structure increases through ligand substitution, it is possible to further increase light emitting efficiency and increase durability and stability by means of a hydrophobic ligand.

A method of preparing a conductive polymeric film, includes providing a liquid crystal phase comprising a plurality of hydrophobic cores, the phase on a substrate, introducing a hydrophobic component to the phase, the component a conductive polymer precursor, and applying an electric potential across the liquid crystal phase, the potential sufficient to polymerize the said precursor.

Disclosed is an organic electroluminescent element having an element structure that can reduce damage to an organic layer during electrode formation and can facilitate the injection of charges from the electrode into the organic layer. The organic electroluminescent element includes an anode, a cathode, and an organic layer held between the anode and the cathode. The organic layer contains a luminescent material. The organic electroluminescent element further includes a transparent protective layer provided between the anode or the cathode and the organic layer. The transparent protective layer contains a bipolar charge transport organic compound and an electron-accepting compound. The transparent protective layer is formed in a period between after the formation of the organic layer and before the formation of the anode or the cathode on the organic layer.

A cathode that contain nanostructures that extend into the organic layer of an OLED has been described. The cathode can have an array of nanotubes or a layer of nanoclusters extending out from its surface. In another arrangement, the cathode is patterned and etched to form protruding nanostructures using a standard lithographic process. Various methods for fabricating these structures are provided, all of which are compatible with large-scale manufacturing. OLEDs made with these novel electrodes have greatly enhanced electron injection, have good environmental stability.

Complex of formula (I)

in which:

• • F represents one or more groups capable of grafting chemically to a substrate of semiconductive porous oxide ceramic;
  • S represents a sensitizing group for sensitizing a semiconductive porous oxide ceramic;
  • C is a conductive polymer;
  • E is a deconjugating spacer group which makes it possible to electrically isolate the sensitizer (S) from the electron-conductive polymer (C).

A cascaded light emitting device. The cascaded light emitting device includes: a base electrode formed of a base electrode material and electrically coupled to a base voltage lead; a top electrode layer formed of a top electrode material and electrically coupled to a top voltage lead; a number of electroluminescent layers arranged between and electrically coupled to the base electrode and top electrode layer; and at least one middle electrode layer formed of a middle electrode material. Each of the middle electrodes is coupled between two juxtaposed electroluminescent layers. The electroluminescent layers include a mixed conductor that luminesces with a peak wavelength.

The invention provides a method of manufacturing a high-efficiency inorganic quantum dot light emitting diode device. The method comprises the following steps: an ITO transparent conductive glass substrate is cleaned and dried; PEIE is diluted by using ethanol to a concentration of 0.05-0.1 wt%, and a PEIE solution is then applied to the substrate to form a thin film around 10 nm; the PEIE is then doped to a ZnO solution, the doping concentration is 0.05-0.1 wt%, and a mixed solution of ZnO:PEIE is applied to the substrate; inorganic quantum dots dissolved in toluene are then applied; and the substrate is finally placed in a vacuum chamber, vacuum evaporation of CBP, CBP:MoO3, MoO3 and Al is carried out sequentially, and a quantum dot light emitting diode device is thus obtained. PEIE/ZnO:PEIE is adopted as an electron injection layer, the injection barrier of electrons is reduced, the electron injection efficiency is improved, and the whole efficiency of the device is greatly improved.

A semiconductor device, including: a semiconductor material and an electrode structure electrically coupled to the semiconductor material. The electrode structure includes: a first portion formed of a first conductive material and a second portion formed of a second conductive material. Both the first portion and the second portion of the electrode structure are in direct contact with the semiconductor material. The first conductive material has a first work function and the second conductive material has a second work function that is different from the first work function, so that the second portion of the electrode structure forms a junction with the first portion. The first portion and the second portion of the electrode structure are arranged such that the fringe field from the edge of this junction between the first portion and the second portion extends into the semiconductor material.

An imaging apparatus includes a plurality of unit pixels arranged in a matrix and configured to generate a signal by photoelectric conversion, a plurality of pixel output lines connected to each column of the unit pixels, a plurality of column amplifiers configured to amplify a signal of the pixel output lines, and a driving circuit configured to generate a control signal of the column amplifiers. Each of the column amplifiers includes first and second input terminals, an output terminal, an input capacitance between the first and second input terminals, and a first switch between the second input and output terminals. The driving circuit is configured to generate the control signal so as to make a period for switching the first switch from a conductive state to a non-conductive state longer than a period for switching the first switch from the non-conductive state to the conductive state.

This invention relates to a method for fabrication of electrode material in electronic devices by in situ-electrodeposition of metal or metalloid ions that are present in the device. In another aspect, the present invention relates to electronic devices and charge storage devices comprising the electrodes manufactured by said method. Furthermore, the present invention further relates to a method of enhancing charge injection in an electronic device or charge storage device comprising the steps of: pre-assembling an electronic device or charge storage device and subsequently applying an electric field to effect electrodeposition of an electrode layer in situ by reducing the metal or metalloid ions to a non-ionic state.

There is a method of manufacturing organic thin film devices comprising the steps of dissolving an organic material in a first solvent, thereby providing a first solution; dissolving an inorganic salt in a second solvent, thereby providing a second solution; blending the first solution with the second solution, thereby providing a blended solution; and using the blended solution to prepare organic thin films in the manufacture of the organic thin film devices. Alternatively, the inorganic salt may be added directly to the first solution to provide an inorganic salt-doped solution that is then used to prepare the organic thin films in the manufacture of the organic thin film devices.

A 1,2,4,5-substituted phenyl compound represented by the formula (1):

wherein one of X¹-X⁵ is nitrogen and the remainders of X¹-X⁵ are carbon; R¹ and R² represent hydrogen, C_1-6 alkyl or C_1-6 alkoxy; R³ and R⁴ represent C_1-6 alkyl or C_1-6 alkoxy; and m is an integer of 0-4, and n is an integer of 0-5. This compound is useful as a constituent for an organic electroluminescent device.

The invention relates to a DNA sensor based on a thin film transistor and a preparation method thereof.The DNA sensor comprises the thin film transistor and a DNA molecular probe, the thin film transistor comprises a substrate, a gate electrode, an insulating layer, source and drain electrodes and a semiconductor layer, the substrate, the gate electrode and the insulating layer are sequentially arranged from bottom to top, the semiconductor layer is arranged on the insulating layer, and the source and drain electrodes are in contact with the semiconductor layer, and the DNA molecular probe is fixed on the source and drain electrodes. Compared with the prior art, the source and drain electrodes are used as the substrate, and the DNA molecular probes are fixed on the source and drain electrodes, so that the influence of physical absorption on the organic semiconductor layer on moisture and certain ions is avoided, charge injection is improved, the saturation current and carrier mobility of the sensor are enhanced, and the stability and sensitivity of the DNA sensor are improved.