Directly cooled cathode liner with magnet ring for plasma reaction chamber

Abstract

The invention discloses a straight cold cathode bush with a magnet ring for a plasma reaction chamber. A main bush body is in a four-section stepped shaft structure, wherein through holes are formed in the axes of stepped shafts; a plurality of water channel joint mounting grooves which are evenly distributed around the circumference are formed in the left end surface of the first section of shaft; a cooling water channel which is communicated with the inner wall of the main bush body is formed next to each water channel joint mounting groove; each water channel joint mounting groove is connected with a water channel joint; a seal ring mounting groove A is formed in the right end surface of the first section of shaft; a second section of shaft, a third section of shaft and a fourth section of shaft are sequentially arranged at the large end of the main bush body towards the right; a groove is formed in a middle outer ring of the third section of shaft; an aluminum ring is arranged at the middle part of the groove; a lug boss is formed in the middle of the aluminum ring; and a plurality of neodymium iron boron permanent magnets which are evenly distributed around the circumference are arranged between two sides of the lug boss and the groove. The straight cold cathode bush is reasonable in structure; the plasma can be effectively restrained; corrosion to the reaction chamber caused by the plasma is reduced; the service life of equipment is prolonged; and the maintenance cost of the equipment is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor process equipment, in particular to a direct-cooled cathode liner with a magnet ring for a plasma reaction chamber. Background technique [0002] Plasma reaction chamber is the key equipment for semiconductor chip processing. It is used to process semiconductor wafers to manufacture integrated circuits. Usually, the etching gas or deposition gas in the reaction chamber is excited into a plasma state by applying a radio frequency field to use a vacuum processing chamber for etching and The material is chemically vapor deposited on the substrate. During the plasma etching process, a large number of active free radicals such as C1 group and F group will be generated. When etching semiconductor devices, it will also corrode the inner surface of the plasma reaction chamber made of aluminum and aluminum alloy. This intense erosion produces a large amount of particles, resulting in the need for fr...

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