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An ultraviolet detector based on black phosphorus/graphene heterostructure and its preparation method

A technology of ultraviolet detectors and heterogeneous structures, which is applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as oxygen defects and affecting device performance, so as to improve stability, improve device performance, and improve The effect of response speed

Active Publication Date: 2017-09-29
BEIJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

Due to the presence of lone pairs of electrons on the surface of black phosphorus, when it is exposed to the air, it will quickly react with oxygen and water to form oxygen defects and impurities, which will seriously affect the performance of the device.

Method used

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  • An ultraviolet detector based on black phosphorus/graphene heterostructure and its preparation method
  • An ultraviolet detector based on black phosphorus/graphene heterostructure and its preparation method
  • An ultraviolet detector based on black phosphorus/graphene heterostructure and its preparation method

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Embodiment Construction

[0032] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but should not be used to limit the scope of the present invention.

[0033] figure 1 Be a kind of ultraviolet detector based on black phosphorus / graphene heterostructure of a preferred embodiment of the present invention; Described a kind of ultraviolet detector based on black phosphorus / graphene heterostructure comprises substrate 5, insulation Layer 4, black phosphorus / graphene heterostructure 1 and source electrode 6, drain electrode 7 and gate power supply 8, wherein,

[0034] The black phosphorus / graphene heterostructure 1 is formed by stacking black phosphorus 2 and graphene 3, and the black phosphorus 2 is a two-dimensional layered material located on the insulating layer 4;

[0035] The insulating layer 4 covers the substrate 5, and the material is silicon dioxide; ...

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Abstract

The invention discloses a black phosphorus / graphene heterostructure-based ultraviolet detector and a production method thereof. The detector comprises a substrate, an insulating layer and a black phosphorus / graphene heterostructure, wherein the insulating layer covers the substrate; and the black phosphorus / graphene heterostructure is formed by stacking black phosphorus and graphene and is located on the insulating layer. The disadvantages of the black phosphorus are compensated by the black phosphorus / graphene heterostructure; and the performance of the detector can be improved under the premise of not affecting the advantages of the black phosphorus.

Description

technical field [0001] The invention relates to the technical field of application of two-dimensional materials, and more specifically relates to an ultraviolet detector based on a black phosphorus / graphene heterostructure and a preparation method thereof. Background technique [0002] New two-dimensional layered materials represented by graphene and transition metal sulfides are currently one of the hottest topics in the field of materials. Compared with macroscopic bulk materials and other low-dimensional materials, two-dimensional layered materials have extremely high specific surface area and excellent electrical and optical properties. They are used in high-speed electronic devices, spintronic devices, light-emitting diodes, photodetectors, It has broad application prospects in solar cells, nonlinear optical devices, and biological / chemical sensors. Black phosphorus is a new type of layered material that has emerged in the last two years, and its performance in many as...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/09H01L31/18
CPCH01L31/09H01L31/18Y02P70/50
Inventor 颜鑫张霞吴瑶任晓敏
Owner BEIJING UNIV OF POSTS & TELECOMM
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