A cold fireplace and continuous production method for preparing graphene by CVD method

A production method, graphene technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of quartz tube bursting, high cost, safety production accidents, etc., and achieve the effects of saving costs, improving efficiency, and increasing production capacity

Active Publication Date: 2019-04-30
WUXI GRAPHENE FILM +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the equipment used to grow graphene film by CVD is a tube furnace, which uses a resistance wire to heat the sample inside the quartz tube on the periphery of the quartz tube, and then feeds gas into the quartz tube. The size of the quartz tube is not large, the production capacity of a single device is relatively low, and the quartz tube needs to be replaced regularly, the production cost is relatively high, which is not conducive to the promotion of industrialization
[0006] Due to the arrangement of the resistance wires and the open heating state at both ends, the temperature uniformity of the tube furnace heating cannot be well controlled, and the quartz tube of the tube furnace may be in danger of bursting during use. cause safety accidents

Method used

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  • A cold fireplace and continuous production method for preparing graphene by CVD method
  • A cold fireplace and continuous production method for preparing graphene by CVD method
  • A cold fireplace and continuous production method for preparing graphene by CVD method

Examples

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Effect test

Embodiment 1

[0048] A cold fireplace for preparing graphene by the CVD method, comprising a sample inlet cabin 1, a process cabin 2, and a sample outlet cabin 3, the sample inlet cabin 1, the process cabin 2, and the sample outlet cabin are sequentially connected 3, and adjacent cabins are arranged There are flapper valves 4 for connecting or isolating adjacent compartments. The dimensions of the sample chambers 1 and 3 are Φ1500mm×1300mm, and the size of the process chamber 2 is Φ1500mm×1500mm. These three chambers are connected by two vacuum gate valves 4 with a diameter of 1500mm. Wherein, the process chamber 2 includes a reaction chamber 21 , a soaking plate 22 , a heating layer, an insulation layer 24 , and a condensation wall 25 sequentially from the center to the periphery, and the reaction chamber is used for accommodating the hanger 5 .

[0049] The heating layer adopts heating rods 23 evenly arranged on the periphery of the vapor chamber 22. Preferably, the heating rods 23 adopt gr...

Embodiment 2

[0055] A continuous production method for preparing graphene by CVD method. First, vacuumize the equipment. When the pressure in the process chamber is lower than 1Pa, the carbon rod starts to be heated. Plug-in valve, the manipulator sends the hanger 5 containing the sample from the sampling cabin 1 to the process cabin 2, closes the plug-in valve 4 between the sampling cabin 1 and the process cabin 2, and starts to pass H 2 、CH 4 , Ar to carry out graphene film growth, at this time the pressure of the process cabin is about 500-1000pa, stop the ventilation after the growth is over, make the pressure <10pa, open the flapper valve 4 between the sample cabin 3 and the process cabin 2, and the manipulator will The hanger 5 with the deposited graphene sample is taken out from the process cabin 2, put into the sample delivery cabin 3, then close the plug valve 4 between the sample delivery cabin 3 and the process cabin 2, and pass argon into the sample delivery cabin 3 gas or nit...

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Abstract

The invention discloses a cold wall furnace for preparation of graphene through a CVD method and a continuous production method. The cold wall furnace includes a sample injection room, a process room and a sample discharge room which are successively connected; an insert plate valve is arranged between each adjacent rooms and is used for communicating or isolating the adjacent rooms; the process room successively includes a reaction cavity, a heat evening plate, a heating layer, a heat preservation layer and a condensation wall from the center to the periphery; the reaction cavity is used for holding hanging racks. The cold wall furnace device for growing a graphene thin film through the CVD method adopts a three-room way, a quartz tube furnace growth process and a cooling process are both carried out in a quartz tube at present, and the cold wall furnace device separates the two processes to be carried out in different spaces, so as to improve the efficiency.

Description

technical field [0001] The invention relates to equipment and a continuous production method for preparing graphene by a CVD method, belonging to the field of graphene preparation. Background technique [0002] Graphene preparation technology is developing rapidly. The excellent properties and wide application prospects of graphene have greatly promoted the rapid development of graphene preparation technology. Since Geim et al first prepared graphene by micromechanical exfoliation in 2004, researchers have developed many methods for preparing graphene. Among them, the mainstream methods include epitaxial growth method, chemical vapor deposition CVD method and graphite oxide reduction method. [0003] Existing methods can not meet the requirements of graphene industrialization. Many preparation methods, including micromechanical exfoliation, epitaxial growth, chemical vapor deposition CVD and graphite oxide reduction, still cannot meet the requirements of industrialization...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186
CPCC01P2004/03
Inventor 沈大勇刘海滨谭化兵
Owner WUXI GRAPHENE FILM
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