Lower electrode and reaction chamber

Abstract

The invention discloses a lower electrode and a reaction chamber. The lower electrode comprises an electrostatic chuck and a lower electrode interface board arranged beneath the electrostatic chuck. The lower electrode interface board is used for installing component interfaces connected with the electrostatic chuck. The lower electrode interface board comprises a lower electrode interface board body, an accommodating part arranged on the lower electrode interface board, and local dielectric constant adjustment blocks with a dielectric constant different from that of the lower electrode interface board. The accommodating part is used for accommodating the local dielectric constant adjustment blocks. The dielectric constant of the lower electrode interface board is adjusted by selectively accommodating the local dielectric constant adjustment blocks in the accommodating part. The local dielectric constant of the lower electrode interface board can be adjusted within a certain scope, and thus, the dielectric constant distribution of the lower electrode interface board is improved. By adjusting the local capacitance of the lower electrode interface board, the local radio frequency strength of the lower electrode interface board can be adjusted, the local etching or depositing rate can be adjusted, and the uniformity of wafers during etching or depositing can be improved and enhanced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a lower electrode and a reaction chamber. Background technique [0002] Plasma devices are widely used in the manufacturing process of integrated circuits (ICs) or MEMS devices, and one notable application is inductively coupled plasma (ICP) devices. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. These active particles interact with the substrate to cause various physical and chemical reactions on the surface of the material, thereby changing the surface properties of the material. In the fabrication of semiconductor based devices, multiple layers of material may be alternately deposited onto and etched from the substrate surface. [0003] Electrostatic chuck (ESC for short) is widely used in integrated circuit (IC) manufacturing process, especially plasma etching (ETCH), ph...

AI Technical Summary

Problems solved by technology

Since the electric field distribution of the lower electrode 1 is positively correlated with the plasma distribution, although the lower electrode interface plate 7 of the prior art can affect the electric field distribution, it cannot adjust the electric field distribution and thus adjust the etching uniformity of the wafer 13

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