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Crystal material, preparation method thereof and nonlinear optical crystal including same

A technology of nonlinear optics and crystal materials, applied in the direction of nonlinear optics, polycrystalline material growth, optics, etc., can solve problems such as crystal comprehensive performance defects, and achieve the effect of simple steps, high yield and high purity

Active Publication Date: 2019-03-01
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing materials used in the mid-to-far infrared band mainly include AgGaS 2 , AgGaSe 2 and ZnGeP 2 etc. These materials have played a key role in high-tech fields and military equipment, but at present these crystals still have defects in their overall performance.

Method used

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  • Crystal material, preparation method thereof and nonlinear optical crystal including same
  • Crystal material, preparation method thereof and nonlinear optical crystal including same
  • Crystal material, preparation method thereof and nonlinear optical crystal including same

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The preparation of embodiment 1 sample

[0041] Sample I-1 # preparation of

[0042] Na 2 After S (23.2mg), In (136.3mg) and Se (140.5mg) are batched and mixed evenly, they are packed into a graphite crucible, placed in a quartz tube, and evacuated to 10 -4 Torr (1 torr = 133.322 Pa) seal the tube, put it into the muffle furnace and slowly heat it to 850 °C, keep it warm for 72 hours, after cooling down to 300 °C after 3 °C / h, turn off the muffle furnace and naturally cool to room temperature, and get The chemical formula is Na 2 In 4 SSe 6 red crystals, denoted as sample I-1 # .

[0043] Sample I-2 # ~Sample I-5 # preparation of

[0044] The specific preparation process is the same as sample I-1 # , the difference lies in the proportion of ingredients, high-temperature solid-phase reaction temperature, high-temperature solid-phase reaction time, cooling rate;

[0045] Table 1 Sample I-2 # ~Sample I-6 # preparation of

[0046]

[0047] Sample II-...

Embodiment 2

[0055] The structural characterization of embodiment 2 sample

[0056] Sample I-1 # ~I-6 # The X-ray powder diffraction phase analysis (XRD) was carried out on the MiniFlex II X-ray diffractometer of Rigaku Company, Cu target, Kα radiation source (λ=0.154184nm). The results showed that sample I-1 # ~I-6 # They are all samples with high purity and high crystallinity, the crystal structure type is the same, the peak positions of the main characteristic peaks are the same, and the peak intensity of each peak varies slightly with the difference of A element, M element, and Q element.

[0057] Sample I-1 # The X-ray single crystal diffraction was carried out on a Rigaku Pilatus type single crystal diffractometer, Mo target, Kα radiation source (λ=0.07107nm), test temperature 293K. And through the structure analysis of Shelxtl 97, the analysis result is:

[0058] The chemical formula is Na 2 In 4 SSe 6 , belonging to the orthorhombic Pca2 1 The space group, the unit cell p...

Embodiment 3

[0071] The frequency doubling test of embodiment 3 sample

[0072] respectively for sample I-1 # ~I-6 # , Sample II-1 # ~II-6 # Do the multiplier test, the specific steps are as follows:

[0073]The laser with a wavelength of 1910nm generated by OPO technology is used as the fundamental frequency light to irradiate the crystal powder to be tested, and the intensity of the 955nm second harmonic generated by the charge-coupled device (CCD) is used to detect the intensity of the second harmonic of 955nm generated by the test sample and the standard sample AgGaS 2 Grind separately, and use a standard sieve to sieve crystals of different particle sizes, the particle sizes are 30-50 μm, 50-75 μm, 75-100 μm, 100-125 μm, 125-150 μm and 150-200 μm. Observe the change trend of the frequency multiplier signal with the particle size, and judge whether it can achieve phase matching. Under the same conditions, compare the intensity of the second harmonic generated by the sample with tha...

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Abstract

The invention discloses a crystal material, a preparation method thereof, a nonlinear optical crystal material including the same and application of the crystal material in a laser device. The chemical formula of the crystal material is [AM3Q5]n; A represents at least one of Na, K, Rb and Cs; M represents Ga and / or In; Q represents S and / or Se; n is greater than or equal to 1 but is smaller than or equal to 4. The crystal material has excellent infrared nonlinear optical properties, and the frequency intensity can reach 7 times of the frequency intensity of commercial AgGaS2 of the same particle size, and a laser damage threshold value can reach 11 times of the value of commercial AgGaS2 (abbreviated as AGS). On the frequency converter aspects such as laser frequency doubling, sum frequency, difference frequency and optical parametric oscillation of middle and far infrared bands, the crystal material has an important application value.

Description

[0001] This application is a divisional application, and the parent case is: a crystal material, its preparation method and a nonlinear optical crystal containing it, the application number is 201611108475.8, and the application date is 2016-12-06. technical field [0002] The application relates to a crystal material, a preparation method, a nonlinear optical crystal containing it and an application in a laser, belonging to the field of nonlinear optical materials. Background technique [0003] Middle and far infrared nonlinear optical materials are widely used in laser frequency doubling, optical parametric oscillation and acoustic and electro-optical devices. In recent years, with the rapid development of CO2 lidar detection, laser communication, infrared telemetry, infrared navigation and other technologies, the requirements for high-quality and high-performance infrared nonlinear optical materials are becoming more and more urgent. [0004] At present, the generation of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B1/10G02F1/355
CPCC30B1/10C30B29/46G02F1/3551
Inventor 李淑芳郭国聪姜小明徐忠宁曾卉一
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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