35 results about "Electronvolt" patented technology

A method comprises a plurality of cycles, wherein each cycle, comprises exposing the carbon containing etch layer to oxygen radicals to modify part of the carbon containing etch layer. The carbon containing etch layer is exposed to bombardment ions with an energy greater than 100 eV for less than 0.5 seconds, wherein the bombardment ions remove the modified part of the carbon containing etch layer to form etched features.

The invention discloses a supercontinuum extreme ultraviolet coherent light source generating device based on superstrong laser induction, which comprises an intense laser source, a gas cell and a focus lens, and is characterized in that the intense laser source is used for outputting short-period intense laser pulses; the number of light periods contained in the short-period intense laser pulse is not larger than three, the pulse width ranges from 5 fs to 7 fs, and the single-pulse energy is 500 mJ or above. The gas pool is filled with gas and is arranged in the vacuum cavity; the short-period intense laser pulse enters the gas cell after passing through the focus lens so as to excite gas in the gas cell to generate super-continuous extreme ultraviolet coherent light. According to the technical scheme provided by the invention, super-continuous extreme ultraviolet radiation with the bandwidth exceeding twenty electron volts is generated through the excitation and decoration effects of the strong laser field in the gas cell, strong field attosecond control of external atom radiation dynamics is realized, and spatially separated coherent attosecond light pulses can be generated at the same time; the light source problem of the attosecond pulse interference experiment is solved.

Example methods and related systems for determining a level or amount of carburization in a furnace coil are described. For instance, an embodiment of a method includes directing photons having an energy in a range from 80 to 140 kiloelectronvolts (keV) toward a coil of an ethylene furnace. In addition, the method includes obtaining a photon count for the photons that are emitted from the coil. Further, the method includes determining an amount of carburization in the coil based on the photon count.

Example methods and related systems for determining a level or amount of carburization in a furnace coil are described. For instance, an embodiment of a method includes directing photons having an energy in a range from 80 to 140 kiloelectronvolts (keV) toward a coil of an ethylene furnace. In addition, the method includes obtaining a photon count for the photons that are emitted from the coil. Further, the method includes determining an amount of carburization in the coil based on the photon count.

An OLED display panel comprising a first electrode (101, 201, 301) and a second electrode (102, 202, 302), at least one light-emitting layer (103, 203, 303, 503, 603) arranged between the first electrode (101, 201, 301) and the second electrode (102, 202, 302); a first functional layer (104, 204, 304) and a second functional layer (105, 205, 305) arranged on either side of the respective light-emitting layer; wherein the first functional layer (104, 204, 304) comprises at least one compound having hole transport capability; and the second functional layer (105, 205, 305) comprises at least one compound having electron transport capability; wherein in the at least one light-emitting layer (103, 203, 303, 503, 603) an organic light-emitting compound is doped with a thermally activated delayed fluorescence material in at least one of the light-emitting layers (103, 203, 303, 503, 603); where the lowest triplet energy level of the organic light-emitting compound (T H ) is higher than the lowest singlet energy level of the thermally activated material (S T ) delayed fluorescence; where the lowest triplet energy level of the compound with hole transport capability (T1) and the lowest triplet energy level of the organic light-emitting compound (T H ) satisfy the following formula (I): T 1 − TH > − 0.2 eV where the lowest triplet energy level of the compound with electron transport capability (T2) and the lowest triplet energy level of the organic light-emitting compound (T H ) satisfy the following formula (II): T 2 − TH > − 0.2 eV wherein the at least one light-emitting layer (103, 203, 303, 503, 603) comprises at least one blue light-emitting layer; wherein the blue light-emitting layer comprises at least one high-energy organic light-emitting compound, at least one low-energy organic light-emitting compound, and a thermally activated delayed fluorescence material doped therein; wherein the lowest singlet energy level of the high-energy organic light-emitting compound is higher than the lowest singlet energy level of the thermally activated delayed fluorescence material; where the lowest singlet energy level of the low-energy organic light-emitting compound is lower than the lowest singlet energy level of the thermally activated delayed fluorescence material.

A highly reliable light-emitting device is provided. The light-emitting device includes a first electrode, a second electrode, and a light-emitting layer. The light-emitting layer is positioned between the first electrode and the second electrode. The light-emitting layer includes a first organic compound, a second organic compound, and a substance that can convert triplet excitation energy into light emission. The first organic compound includes a π-electron deficient heteroaromatic ring. The second organic compound includes a π-electron rich heteroaromatic ring or an aromatic amine skeleton. The first organic compound and the second organic compound each contain deuterium. A difference between the lowest triplet excitation level of the first organic compound and that of the second organic compound is less than or equal to 0.10 eV.

The invention relates to particle-induced X-ray emission using a light particle beam and a heavy particle beam. A particle induced X-ray emission (PIXE) analysis method, the method comprising: (a) delivering a first ion beam from a first ion source and comprising ions having a first component, where the ions have a kinetic energy of no greater than 50 kiloelectron volts (keV), onto a region of a sample; (b) transporting a second ion beam from a second ion source onto the sample region while transporting the first ion beam onto the sample region, the second ion beam comprising ions having a second component wherein the ions of the second ion beam have a kinetic energy of no greater than 50 keV; and (c) detecting X-rays emitted from the sample region in response to simultaneous delivery of the first ion beam and the second ion beam to the sample region.

The present invention discloses a supercontinuum extreme ultraviolet coherent light source generating device based on ultra-intense laser induction, comprising an intense laser source, a gas pool and a focusing mirror, wherein the intense laser source is used to output a few-cycle intense laser pulse; the few-cycle intense laser pulse contains no more than three light cycles, the pulse width is between 5-7fs, and the single pulse energy is above 500mJ. The gas pool is filled with gas and is arranged in a vacuum chamber; the few-cycle intense laser pulse is incident on the gas pool after passing through the focusing mirror to excite the gas in the gas pool to generate supercontinuum extreme ultraviolet coherent light. The technical solution provided by the present invention generates supercontinuum extreme ultraviolet radiation with a bandwidth of more than twenty electron volts through the excitation and decoration effect of the strong laser field in the gas pool, realizes the strong field attosecond control of the radiation dynamics of foreign atoms, and can simultaneously generate spatially separated coherent attosecond light pulses, solving the light source problem of attosecond pulse interference experiments.

A laminated light-emitting device (D) comprising a first electrode (d1), a second electrode (d2), at least two light-emitting units (d30) and at least one laminated connection layer (d4). The laminated connection layer (d4) comprises an N-type charge generation layer (d41) and a P-type charge generation layer (d42), which are arranged in a stacked manner. The N-type charge generation layer (d41) is of a binary doped structure including a first host material and a first guest material, and the P-type charge generation layer (d42) is of a binary doped structure including a second host material and a second guest material. An absolute value of a difference value between a highest occupied molecular orbital energy level of the second host material and a highest occupied molecular orbital energy level of the first host material is greater than 0.3 electron volts, and an absolute value of a difference value between a lowest unoccupied molecular orbital energy level of the second host material and a lowest unoccupied molecular orbital energy level of the first host material is greater than 0.1 electron volts.

A memory transistor has a tunneling dielectric layer and a charge trapping layer between a channel region and a gate electrode, wherein the charge trapping layer has a conduction band step below a low point of a tunneling barrier in the tunneling dielectric layer such that electrons tunnel directly into the charge trapping layer when a write voltage is applied. The conduction band step of the charge trapping layer is between -1.0 electron volts and 2.3 electron volts. The memory transistor can include a barrier layer between the tunneling dielectric layer and the charge trapping layer, the barrier layer having a conduction band step that is less than the conduction band step of the charge trapping layer.

A method of water purification includes mixing contaminated water with a zirconium dioxide (ZrO2) / calcium silicate (CaSiO3) / graphitic carbon nitride (g-C3N4) based nanocomposite material to form a reaction mixture, further exposing the resultant reaction mixture to light, and removing the nanocomposite material to form purified water. The nanocomposite material consists of spherical metal oxide nanoparticles including a ZrO2 phase and a CaSiO3 phase dispersed on a matrix of g-C3N4 nanosheets, where the spherical metal oxide nanoparticles have an average particle diameter in a range from 2-25 nanometer (nm), and the nanocomposite material has a band gap energy in a range from 1.5-4 electron volt (eV).

A stacked light-emitting device includes a first electrode, a second electrode, at least two light-emitting units, and at least one stacked connection layer. A stacked connection layer is between every two adjacent light-emitting units and includes an N-type charge generation layer and a P-type charge generation layer. The N-type charge generation layer is of a doped binary structure including a first host material and a first guest material; and the P-type charge generation layer is of a doped binary structure including a second host material and a second guest material. An absolute value of difference between HOMO energy level of the second host material and HOMO energy level of the first host material is greater than 0.3 electron volts; and an absolute value of difference between LUMO energy level of the second host material and LUMO energy level of the first host material is greater than 0.1 electron volts.

A photovoltaic device comprises a PIN structure in which a p-type hole transporting layer (2) is carried by a substrate (1) and a perovskite layer (3) and an n-type electron transporting layer (4) are arranged in sequence on the p-type layer. A light transmissive electrically conductive layer (9) is provided on top of the n-type electron transporting layer to form a light receiving top surface. Between the n-type electron transporting layer and the light transmissive conductive layer there is provided a structure comprising two inorganic electrically insulative layers (6, 8) having a layer of a conductive material (7) therebetween, wherein the two inorganic electrically insulative layers comprise a material having a band gap of greater than 4.5 eV and the layer of a conductive material comprises a material having a band gap of less than the band gap of the electrically insulative layers, wherein each electrically insulative layer forms a type-1 offset junction with the layer of conductive material.

The invention discloses an integral active spectrum stabilization system and method of a desktop high-resolution X-ray emission spectrometer, and belongs to the field of precise spectrum analysis. The system comprises a single heat capacity main base which is integrally formed and internally provided with a temperature control flow channel and serves as a unified physical and thermal reference; an optical assembly directly rigidly mounted on the base; the module is used for supporting the base to actively isolate vibration; and the closed-loop feedback subsystem consists of a light beam position sensor, a micro-motion compensation mechanism and a controller. The method comprises the steps that base global heat balance and active vibration isolation are established; calibrating a light path and recording a zero position; monitoring the position of the reference beam in real time; and a micro-motion mechanism is driven to compensate the crystal angle according to the drift distance in a closed-loop manner, and a light path is dynamically locked. According to the invention, the problem of long-term drift of the desktop high-resolution X-ray spectrometer caused by module assembly and passive stability is solved, sub-electron volt-level long-term energy stability in a conventional laboratory environment is realized, and the measurement repeatability and reliability are remarkably improved.

The invention relates to a preparation method of a wide-band-gap nitrogen atom doped non-benzene type graphene nanobelt, and belongs to the technical field of surface synthesis. The method comprises the following steps: depositing 1, 8-dibromo-9H-carbazole precursor molecules on the surface of a gold substrate by utilizing a strategy that the 1, 8-dibromo-9H-carbazole precursor molecules can generate intramolecular dehalogenation coupling and cyclization dehydrogenation under the catalytic action of the gold substrate, preserving heat for 20-40 minutes at the temperature of 200 DEG C, and then cooling a sample to room temperature to obtain a one-dimensional polymer chain. And then carrying out heat preservation on the one-dimensional molecular chain sample at the temperature of 400 DEG C for 20-40 minutes to obtain the nitrogen atom doped non-benzene type graphene nanobelt. The prepared nitrogen atom doped non-benzene type graphene nanometre has a band gap of 3.55 electron volts, and belongs to a broadband semiconductor.

The application discloses an ultralow-energy monochromatic electron beam generation and transmission device, and relates to the technical field of electron optical instruments, which comprises the following units arranged in sequence along an electron beam transmission path: an electron generation unit for generating an initial electron beam; an injection lens unit for receiving the initial electron beam generated by the electron generation unit; a monochromator unit having an inlet and an outlet and being used for energy screening of the electron beam from the injection lens unit to reduce energy spread thereof; and a deceleration and focusing lens unit for receiving the monochromatized electron beam output from the outlet of the monochromator unit. The device can output an ultralow-energy electron beam with a continuously adjustable energy of 0 eV to 5 eV through the cooperative work of the electron generation unit, the injection lens unit, the monochromator unit and the deceleration and focusing lens unit, and the energy spread is better than 90 meV, thereby improving beam monochromaticity and transmission efficiency.

Field effect transistor (FET) devices having a heterogeneous / segmented channel region and methods for fabricating the same are provided. In one example, a fin-like field effect transistor (FinFET) device includes a substrate, a fin structure disposed on the substrate, a segmented channel region formed in the fin structure, two source / drain (S / D) regions separated by the segmented channel region, and a gate structure wrapping around the segmented channel region. The segmented channel region further includes multiple channel segments sequentially arranged in the segmented channel region, and the multiple channel segments include a first channel segment and a second channel segment. The first channel segment includes a first channel barrier material dispersed therein and has a first energy barrier, and the first energy barrier is at least 0.1 electron volts (eV) in a carrier flow path between the two S / D regions when the FinFET device is not activated for operation.

A microelectronic device comprises a stack structure, cell pillar structures, an active body structure, digit line structures, and control logic devices. The stack structure comprises vertically neighboring tiers, each of the vertically neighboring tiers comprising a conductive structure and an insulative structure vertically neighboring the conductive structure. The cell pillar structures vertically extend through the stack structure and each comprise a channel material and an outer material stack horizontally interposed between the channel material and the stack structure. The active body structure vertically overlies the stack structure and is in contact with the channel material of the cell pillar structures. The active body structure comprises a metal material having a work function greater than or equal to about 4.7 electronvolts. The digit line structures vertically underlie the stack structure and are coupled to the cell pillar structures. Memory devices, electronic systems, and methods of forming a microelectronic device are also described.

A gate-all-around charge plasma-based dual-material gate stack nanowire field-effect transistor, consisting of: an undoped intrinsic silicon nanowire body whose thickness is smaller than the Debye length; a source electrode and a drain electrode generated in the undoped intrinsic silicon nanowire body by means of a charge plasma, wherein the source electrode and the drain electrode have metal contacts with a work function that is less than the sum of the electron affinity of silicon and half the band gap of silicon, and wherein the source electrode and the drain electrode are configured to generate an electron charge plasma in the source and drain regions of the silicon nanowire body; a gate structure surrounding the undoped intrinsic silicon nanowire body, wherein the gate structure comprises a dual-material gate containing a first gate metal material and a second gate metal material arranged along a length of the silicon nanowire body, and wherein the first gate metal material has a first work function and the second gate metal material has a second work function, the difference between the first and second work functions being 0.5 electron volts; and a gate dielectric layer arranged between the gate structure and the silicon nanowire body, wherein the gate dielectric layer comprises a gate stack structure containing a silicon dioxide layer and a layer of dielectric material with a high dielectric constant; the transistor is configured to provide improved analog performance with reduced short-channel effects and operates without chemical doping in the source and drain regions.

Embodiments provide a light emitting element and a display device that includes the light emitting element. The light emitting element includes a first electrode, a first emission layer disposed on the first electrode and including a (1-1)-th compound, a second emission layer disposed on the first emission layer and including a (2-1)-th compound, and a second electrode disposed on the second emission layer, wherein the (2-1)-th compound has a lowest excited triplet energy level (T1) in a range of about 1.5 eV to about 2.1 eV. The (1-1)-th compound is represented by Formula 1, the (2-1)-th compound is represented by Formula 2, and Formula 1 and Formula 2 are each described in the specification.

A method for manufacturing a flexible circuit may include treating a surface of the flexible circuit with at least one of an atmospheric plasma and an ion beam. The atmospheric plasma is formed by directing a gas stream between a motor and the surface of the flexible circuit and generating a voltage between the motor and the flexible circuit to generate plasma from the gas. The average ion energy of the ions varies from about 500 electron volts to about 1,500 electron volts.

Practical implementations of particle-induced X-ray emission (PIXE) on a focused ion beam device or a dual beam device that includes both focused ion beam and scanning microscopy capabilities are described. Accordingly, an analysis method includes: directing ions including a mixture of protons and non-hydrogen ions onto a sample, where the kinetic energy of the ions of the mixture is no more than 50 kiloelectron volts (keV); and detecting and measuring X-rays emitted from the sample in response to the protons and the non-hydrogen ions impacting onto the sample.

A method of Particle-Induced X-Ray Emission (PIXE) analysis comprises: (a) delivering a first ion beam from a first ion source and comprising ions having a first composition onto an area of a sample, wherein the kinetic energy of the ions is not greater than 50 kilo-electron-Volts (keV); (b) simultaneously with the delivering of the first ion beam onto the sample area, delivering a second ion beam from a second ion source onto the sample area, the second ion beam comprising ions having a second composition, wherein the kinetic energy of the ions of the second ion beam is not greater than 50 keV; and (c) detecting X-rays that are emitted from the sample area in response to the simultaneous delivery of the first and second ion beams thereto.

To provide an improved method of particle-induced X-ray emission (PIXE) analysis at relatively low ion beam energy.SOLUTION: A method of PIXE analysis comprises: (a) delivering a first ion beam from a first ion source onto an area of a sample, where the first ion beam comprises ions having a first composition and having kinetic energy of 50 kilo-electron-Volts (keV) or less; (b) simultaneously with the delivery of the first ion beam onto the sample area, delivering a second ion beam from a second ion source onto the sample area, where the second ion beam comprises ions having a second composition and having kinetic energy of 50 keV or less; and (c) detecting X-rays that are emitted from the sample area in response to the simultaneous delivery of the first and second ion beams to the sample area.SELECTED DRAWING: Figure 7A

A fin field effect transistor device is provided. In one example, a fin field effect transistor (FinFET) device includes a substrate, a fin structure disposed on the substrate, a segmented channel region formed in the fin structure, two source / drain regions separated by the segmented channel region, and a gate structure surrounding the segmented channel region. The segmented channel area further comprises a plurality of channel sections sequentially arranged in the segmented channel area, and the channel sections comprise the first channel section and the second channel section. The first channel section includes a first channel barrier material dispersed in the first channel section and has a first energy barrier. When the FinFET device is not started, the carrier flow path of the first energy barrier between the two source / drain regions is at least 0.1 electron volt.

Practical implementation of Particle-Induced X-ray Emission (PIXE) on a focused ion beam apparatus or on a dual-beam apparatus comprising both focused-ion beam and scanning microscopy capabilities is described. Accordingly, an apparatus comprises: a focused ion beam (FIB) column configured to direct ions comprising a mixture of protons and non-hydrogen ions onto a sample, wherein the kinetic energy of ions of the mixture is not greater than 50 kilo-electron-Volts (keV); and an X-ray detector configured to detect and measure X-rays that are emitted from the sample in response to the impingement of the protons and non-hydrogen ions onto the sample.

An electrode includes a carbon fiber, wherein the carbon fiber has a first region including a surface of the carbon fiber, when a cross section of the carbon fiber is analyzed by electron energy loss spectroscopy, the first region has peaks both around 285 eV and around 530 eV, and the first region is provided up to 10% of a diameter of the carbon fiber from the surface toward a center.

Methods and systems for performing overlay and edge placement error based on measurement data from soft x-ray (SXR) scatterometry measurements are presented herein. Short wavelength SXR radiation focused on small illumination spot sizes enables measurement of design rule targets and functional device structures in dies. In some embodiments, measurements of SXR scatterometry measurements are performed with SXR radiation having energies in the range from 10 to 5,000 electron volts. Thus, measurements at SXR wavelengths permit target designs at process design rules that closely represent actual device overlay. In some embodiments, measurements of SXR scatterometry measurements of overlay and shape parameters are performed simultaneously from the same metrology target to enable accurate measurement of edge placement error. In another aspect, based on SXR measurements of design rule targets, overlay of non-periodic device structures is estimated by calibrating the SXR measurements to reference measurements of actual device targets.

The method comprises the following steps: dissolving lead chloride, manganese chloride, hydrochloric acid and polyether amine D400 in N, N-dimethylformamide to form a polar precursor solution, mixing the polar precursor solution with an oleic acid / n-octane weak polar solvent containing cesium acetate, stirring for 1 hour at 20-30 DEG C and 400 r / min, centrifuging for 3-5 minutes at 8000-10000 r / min, and drying to obtain the manganese-doped flexible lead halide perovskite material. And washing with n-hexane for three times. The material is composed of an amorphous perovskite network and embedded nanocrystals with the average diameter of 6.8 nanometers, and has polymer-like viscoelasticity and 3D printing capacity; the photoluminescence quantum yield exceeds 50%, and the Stokes shift is gt; the X-ray excitation light yield is about 8.07 * 10 < 4 > photons / megaelectron volts, and the imaging resolution is 9.0 line pairs / mm. The material is still excellent in performance after being subjected to 300% stretching, 5000 times of bending circulation, air storage for nearly two months and 5 minutes of self-healing, and is suitable for flexible electronic devices, wearable X-ray detection equipment and complex three-dimensional common imaging systems.

A pixel sensor may include a layer stack to reduce and / or block the effects of plasma and etching on a photodiode and / or other lower-level layers. The layer stack may include a first oxide layer, a layer having a band gap that is approximately less than 8.8 electron-Volts (eV), and a second oxide layer. The layer stack may reduce and / or prevent the penetration and absorption of ultraviolet photons resulting from the plasma and etching processes, which may otherwise cause the formation of electron-hole pairs in the substrate in which the photodiode is included.