61 results about "Electronvolt" patented technology

An organic light-emitting element includes an anode, a functional layer, and a hole injection layer between the anode and the functional layer. The functional layer contains an organic material. The hole injection layer injects holes to the functional layer. The hole injection layer comprises tungsten oxide and includes an occupied energy level that is approximately 1.8 electron volts to approximately 3.6 electron volts lower than a lowest energy level of a valence band of the hole injection layer in terms of binding energy.

Disclosed is an electronic device including an n-type organic compound layer as a portion of an electrode for hole injection or hole extraction. The electronic device includes a first electrode including a conductive layer and an n-type organic compound layer disposed on the conductive layer; a second electrode; and a p-type organic compound layer that is interposed between the n-type organic compound layer of the first electrode and the second electrode and forms an NP junction together with the n-type organic compound layer of the first electrode and energy levels of the layers satisfy the following Expressions (1) and (2):

2 eV<E_nL−E_F1≦4 eV  (1)

E_pH−E_nL≦1 eV  (2)

• • where E_F1 is a Fermi energy level of the conductive layer of the first electrode, E_nL is an LUMO energy level of the n-type organic compound layer of the first electrode, and E_pH is an HOMO energy level of the p-type organic compound layer forming the NP junction together with the n-type organic compound layer of the first electrode.

Compound tunneling field effect transistors integrated on a silicon substrate are provided with increased tunneling efficiency and an abrupt band slope by forming a source region with a material having a bandgap at least 0.4 electron volts (eV) narrower than that of silicon to increase a driving current (ON current) by forming a channel region with a material having almost no difference in lattice constant from a source region and having a high electron mobility at least 5 times higher than silicon. ON/OFF current ratio simultaneously is increased by forming a drain region with a material having a bandgap at least as wide as a channel region material to restrain OFF current. Tunneling field effect transistors having various threshold voltages according to circuit designs are formed easily by adding a specific material with an electron affinity less than a source region material when forming a channel region.

A magnetic recording medium, including a substrate, and a data-storing thin film layer formed over the substrate. The data-storing thin film layer is comprised of cobalt (Co), platinum (Pt), and a multi-component oxide. The multi-component oxide has cations with a reduction potential of less than −0.03 electron volts, and atomic radii of less than 0.25 nanometers. Additionally, the multi-component oxide is diamagnetic, paramagnetic, or magnetic with a permeability of less than 10⁻⁶ m³/kg. The multi-component oxide has a dielectric constant greater than 5.0. The sputter target is further comprised of chromium (Cr) and/or boron (B).

There are disclosed novel compounds, liquid crystal compositions, polymers, optically anisotropic products, and optical or liquid crystal elements that have large refractive index anisotropy, mix easily with other liquid crystals, have advantageous stability against light, and exhibit absorption at practically short wavelength in the ultraviolet region. The compounds are represented by the formula (1) and have a phenylacetylene structure, wherein difference ΔE in energy of HOMO of parts (1-1), (1-2) and (1-3) calculated by the method of molecular orbitals is not less than 0.3 electronvolt, and the polarizability anisotropy Δα of a molecule represented by the formula (1) calculated in the same way is not lower than 500 A.U.:

(A¹ to A⁴: H, F, alkyl or alkoxy group of C1 to C10 optionally substituted with F; P¹, P²: structure fulfilling the conditions of HOMO energy and polarizability).

Disclosed is an organic light emitting device comprising a first electrode, two or more organic compound layers, and a second electrode, wherein the first electrode comprises a conductive layer and an n-type organic compound layer which is in contact with the conductive layer, one of the organic compound layers interposed between the n-type organic compound layer of the first electrode and the second electrode is a p-type organic compound layer forming an NP junction together with the n-type organic compound layer of the first electrode, energy levels of the layers satisfy the following Expressions (1) and (2), and one or more layers interposed between the p-type organic compound layer and the second electrode are n-doped with alkali earth metal:

0 eV<E_nL−E_F1≦4 eV  (1)

E_pH−E_nL≦1 eV  (2)

• • where E_F1 is a Fermi energy level of the conductive layer of the first electrode, E_nL is an LUMO (lowest unoccupied molecular orbital) energy level of the n-type organic compound layer of the first electrode, and E_pH is an HOMO (highest occupied molecular orbital) energy level of the p-type organic compound layer forming the NP junction together with the n-type organic compound layer of the first electrode.

A light-emitting device includes: a substrate; a light reflection layer that is formed on the substrate and reflects light; a first electrode that is formed on the light reflection layer and transmits light; a light-emitting layer that is formed on the first electrode and emits light; a second electrode that is formed on the light-emitting layer and transmits a part of light from the light-emitting layer and reflects the rest of the light from the light-emitting layer; and a conductive transflective layer that is formed on the second electrode and that transmits a part of light from the second electrode and reflects the rest of the light from the second electrode. A work function of the second electrode is 4 eV (electron volts) or less. The conductive transflective layer is formed of a metal material having a higher optical reflectance than the second electrode.

The invention belongs to the field of organic photoelectricity, and particularly relates to an organic compound and an organic photoelectric element containing the organic compound, in particular to an organic light-emitting diode. The structure of the organic compounds is shown in the formula (I). The organic compound group shown in the formula (I) has a remarkable characteristic that the difference value between the singlet state energy level S1 and the triplet state energy level T1 of the organic compounds is smaller than or equal to 0.35 electron volt. Detailed description information and the organic photoelectric element thereof can be understood by referring to the specific description provided by the invention. The organic compound provided by the invention has the characteristic of thermal activation delayed fluorescence, can improve the utilization efficiency of triplet excitons when being applied to an organic electroluminescent diode, and particularly can improve the current efficiency, reduce the driving voltage and obviously prolong the service life of a light-emitting element when being used as a functional layer of the light-emitting element, and good commercialization prospects are realized.

Methods and systems for measuring structural and material characteristics of semiconductor structures based on wavelength resolved, soft x-ray reflectometry (WR-SXR) at multiple diffraction orders are presented. WR-SXR measurements are simultaneous, high throughput measurements over multiple diffraction orders with broad spectral width. The availability of wavelength resolved signal information at each of the multiple diffraction orders improves measurement accuracy and throughput. Each non-zero diffraction order includes multiple measurement points, each different measurement point associated with a different wavelength. In some embodiments, WR-SXR measurements are performed with x-ray radiation energy in a range of 10-5,000 electron volts at grazing angles of incidence in a range of 1-45 degrees. In some embodiments, the illumination beam is controlled to have relatively high divergence in one direction and relatively low divergence in a second direction, orthogonal to the first direction. In some embodiments, multiple detectors are employed, each detecting different diffraction orders.

A selector device includes a first electrode composed of a first metal having a first work function. A second electrode is composed of a second metal having a second work function. A selector layer is disposed between the first and second electrodes and is composed of a dielectric material having a conduction band and a valence band defining a band gap of at least 5 electron volts. Dopant atoms are disposed in the selector layer to form a sub-conduction band that is below the conduction band and above the work functions. When a threshold voltage is applied across the first and second electrodes, and a magnitude of the threshold voltage exceeds an energy difference between the sub-conduction band and the work functions, but does not exceed an energy difference between the conduction band and the work functions, an on-current will conduct through the selector layer.

Ion implantation with high brightness, ion beam by direct electron impact ionization of gas or vapor of eg dimer or decaborane near the exit aperture (46; 176) of the ionization chamber (80; 175). Preferably, conditions should be maintained that generate a considerable ion density and limit the ion transverse kinetic energy to within 0.7 eV (electron volts); the width of the ionization volume near the exit hole is limited to about three times the width of the exit hole; Exit holes are very slender; magnetic fields are avoided or limited; ion beam noise is kept low; conditions within the ionization chamber are maintained to prevent arcing from forming. Ions generated from the ion source are delivered to the target surface and implanted by ion beam optics, such as a batch injector in Fig. (20), or a continuous injector; in some cases, ion acceleration-deceleration beamlines are used Clusters are more beneficial. The invention also discloses the structure of the electron gun, the belt electron source and the structure of the ionization box. The present invention demonstrates the characteristics of the formation of drain extension and planar mesa doping of semiconductor devices, such as CMOS (Complementary Metal Oxide Semiconductor) devices.

Methods and systems for performing overlay and edge placement errors based on Soft X-Ray (SXR) scatterometry measurement data are presented herein. Short wavelength SXR radiation focused over a small illumination spot size enables measurement of design rule targets or in-die active device structures. In some embodiments, SXR scatterometry measurements are performed with SXR radiation having energy in a range from 10 to 5,000 electronvolts. As a result, measurements at SXR wavelengths permit target design at process design rules that closely represents actual device overlay. In some embodiments, SXR scatterometry measurements of overlay and shape parameters are performed simultaneously from the same metrology target to enable accurate measurement of Edge Placement Errors. In another aspect, overlay of aperiodic device structures is estimated based on SXR measurements of design rule targets by calibrating the SXR measurements to reference measurements of the actual device target.

A quantum dot device includes an anode, a hole injection layer on the anode, a hole transport layer on the hole injection layer, a quantum dot layer on the hole transport layer, and a cathode on the quantum dot layer, wherein a highest occupied molecule orbital (HOMO) energy level of the quantum dot layer is greater than or equal to about 5.6 electronvolts (eV), a difference between a HOMO energy level of the hole transport layer and the highest occupied molecule orbital energy level of the quantum dot layer is less than about 0.5 eV, the hole injection layer has a first surface contacting the anode and a second surface contacting the hole transport layer, and a HOMO energy level of the first surface of the hole injection layer is different from a HOMO energy level of the second surface of the hole injection layer.

The invention relates to an ultrafast high-energy electronic probe system based on an ultrafast wide-spectrum electron beam. The system comprises a laser driving electron input system, a femtosecond laser time precise synchronization system, a combined magnet module, a sample and a separation magnet. According to the system, ultra-short and ultra-strong laser generated by the femtosecond laser isutilized to be coupled with the target body to generate a hundred-megabit electron volt ultrafast wide-spectrum electron beam, the ultrafast wide-spectrum electron beam passes through the combined magnet module to generate time chirp, and a picosecond-level ultrafast electron beam with time information is obtained through the femtosecond laser time precise time synchronization system and can be used for the ultrafast electron probe. The ultrafast wide-spectrum high-energy electron beam driven by the femtosecond laser is used as an electron source, the picosecond ultrafast high-energy electronic probe can be obtained, picosecond-level electron beam time resolution is realized, the time resolution of the electronic probe system is improved, the hundred-megabit electron volt high-energy electronic probe is obtained and the system has a wide application prospect in the aspect of ultrafast electronic detection.

A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced.

The invention belongs to the field of organic photoelectricity, particularly relates to a composition comprising an iridium metal complex and an organic compound, and also describes an organic electroluminescent element using the composition as an organic functional layer. The structure of the organic compound is shown as a formula (I), and the structure of the iridium metal complex is shown as a formula (II); the difference value [delta]ST between the singlet state energy level S1 and the triplet state energy level T1 of the compound shown as the formula (I) of the organic compound is less than or equal to 0.35 electron volt; and iridium metal complexes of Formula (II) and organic optoelectronic elements comprising them can be understood by referring to the specific description provided herein. The composition disclosed by the invention is applied to a light-emitting layer of an organic light-emitting diode, so that the current efficiency of a light-emitting element is improved, the driving voltage is obviously reduced, the service life is prolonged, and the composition has a good commercialization prospect.

The invention belongs to the field of organic photoelectricity, particularly relates to a host-guest composition which comprises an iridium metal complex and an organic compound, and also describes an organic electroluminescent element using the composition as an organic functional layer. The structure of the organic compound is shown as a formula (I), and the structure of the iridium metal complex is shown as a formula (II); the difference value delta ST between the singlet state energy level S1 and the triplet state energy level T1 of the compound shown as the formula (I) of the organic compound is less than or equal to 0.35 electron volt; iridium metal complexes of Formula (II) and organic optoelectronic elements comprising them can be understood by referring to the specific description provided herein. The host-guest composition disclosed by the invention is applied to a light-emitting layer of an organic light-emitting diode, so that the current efficiency of a light-emitting element is improved, the driving voltage is obviously reduced, the service life is prolonged, and the host-guest composition has a good commercial prospect.