64 results about "Electronvolt" patented technology

There are disclosed novel compounds, liquid crystal compositions, polymers, optically anisotropic producgs, and optical or liquid crystal elements that have large refractive index anisotropy, mix easily with other liquid crystals, have advantageous stability against light, and exhibit absorption at practically short wavelength in the ultraviolet region. The compounds are represented by the formula (1) and have a phenylacetylene structure, wherein difference ΔE in energy of HOMO of parts (1-1), (1-2) and (1-3) calculated by the method of molecular orbitals is not less than 0.3 electronvolt, and the polarizability anisotropy Δα of a molecule represented by the formula (1) calculated in the same way is not lower than 500 A.U.:P1—H  (1-2)P2—H  (1-3)(A1 to A4: H, F, alkyl or alkoxy group of C1 to C10 optionally substituted with F; P1, P2: structure fulfilling the conditions of HOMO energy and polarizability).

A positive electrode active material including: a lithium complex oxide represented by Formula 1; and a carbon coating layer disposed on the lithium complex oxide, wherein, in a C1s XPS spectrum of the positive electrode active material, a peak intensity of a first peak at a binding energy from about 288 eV to about 293 eV is greater than a peak intensity of a second peak at a binding energy from about 283 eV to about 287 eV, and in an O1s X-ray photoelectron spectrum of the positive electrode active material, a peak intensity of a third peak at a binding energy from about 530.5 eV to about 535 eV is greater than a peak intensity of a fourth peak at a binding energy from about 527.5 electron volts to about 530 electron volts,LiaMbM′cM″dOe.  Formula 1

Methods and systems for x-ray based semiconductor metrology utilizing a clean, hard X-ray illumination source are described herein. More specifically, a laser produced plasma light source generates high brightness, hard x-ray illumination having energy in a range of 25,000 to 30,000 electron volts. To achieve high brightness, a highly focused, very short duration laser beam is focused onto a denseXenon target in a liquid or solid state. The interaction of the focused laser pulse with the high density Xenon target ignites a plasma. Radiation from the plasma is collected by collection optics and is directed to a specimen under measurement. The resulting plasma emission is relatively clean because of the use of a non-metallic target material. The plasma chamber is filled with Xenon gas to further protect optical elements from contamination. In some embodiments, evaporated Xenon from the plasma chamber is recycled back to the Xenon target generator.

A thermoelectric material including: a thermoelectric matrix; and a plurality of metal nanoparticles disposed in the thermoelectric matrix, wherein a difference between a work function of thermoelectric matrix and a work function of a metal particle of the metal nanoparticles is about −1.0 electron volt to about 1.0 electron volt.

Disclosed is an organic light emitting device comprising a first electrode, two or more organic compound layers, and a second electrode, wherein the first electrode comprises a conductive layer and an n-type organic compound layer which is in contact with the conductive layer, one of the organic compound layers interposed between the n-type organic compound layer of the first electrode and the second electrode is a p-type organic compound layer forming an NP junction together with the n-type organic compound layer of the first electrode, energy levels of the layers satisfy the following Expressions (1) and (2), and one or more layers interposed between the p-type organic compound layer and the second electrode are n-doped with alkali earth metal:0 eV<EnL−EF1≦4 eV  (1)EpH−EnL≦1 eV  (2)where EF1 is a Fermi energy level of the conductive layer of the first electrode, EnL is an LUMO (lowest unoccupied molecular orbital) energy level of the n-type organic compound layer of the first electrode, and EpH is an HOMO (highest occupied molecular orbital) energy level of the p-type organic compound layer forming the NP junction together with the n-type organic compound layer of the first electrode.

The invention discloses a diagnostic method and a diagnostic device for electrostatic waves of laser plasma instability. The diagnostic method includes the following steps: S1, generating an electron beam probe with an energy of more than 100 MeV and a beam length of 0.1 μm to 100 μm ; S2, obtain the original density information of the electron beam probe; S3, excite the unstable electrostatic wave of the laser plasma, inject the electron beam probe with known original density information into the electrostatic wave, and make the electron beam probe pass through the plasma Density modulation is generated under the action of the electrostatic wave electric field; S4, obtain the spatial distribution information of the density modulation of the electron beam probe after passing through the electrostatic wave; S5, invert and reconstruct the spatial distribution information of the density modulation, and obtain the absolute intensity information of the electrostatic wave . The invention solves the problems in the prior art that it is difficult to build a diagnosis platform, the absolute intensity information of electrostatic waves cannot be obtained, and the simultaneous diagnosis of two or more laser plasma unstable electrostatic waves occurring at the same position cannot be performed at the same time.

The invention belongs to the field of organic photoelectricity, specifically relates to a composition comprising an iridium metal complex and an organic compound, and simultaneously describes an organic electroluminescent element using the composition as an organic functional layer. Wherein the structure of the organic compound is shown in the formula (I), and the structural formula (II) of the iridium metal complex is shown in: the difference ΔST between the singlet energy level S1 and the triplet energy level T1 of the compound represented by the organic compound formula (I) < 0.35 electron volts; and the iridium metal complex formula (II) and organic optoelectronic elements comprising them can be understood by referring to the specific description provided herein. The composition of the invention is applied to the light-emitting layer of the organic electroluminescent diode, so that the current efficiency of the light-emitting element is improved, the driving voltage is obviously reduced, the service life is prolonged, and it has good commercialization prospects.

The present invention provides methods, devices and systems for a selection device which may comprise at least one semiconductive stack of semiconductive material formed on a first electrode, wherein the semiconductive stack may have a thickness of about 700 Angstroms or less thickness. Each of the at least one semiconducting material can have an associated bandgap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconducting stack.