8 results about "Electronvolt" patented technology

A memory transistor has a tunneling dielectric layer and a charge trapping layer between a channel region and a gate electrode, wherein the charge trapping layer has a conduction band step below a low point of a tunneling barrier in the tunneling dielectric layer such that electrons tunnel directly into the charge trapping layer when a write voltage is applied. The conduction band step of the charge trapping layer is between -1.0 electron volts and 2.3 electron volts. The memory transistor can include a barrier layer between the tunneling dielectric layer and the charge trapping layer, the barrier layer having a conduction band step that is less than the conduction band step of the charge trapping layer.

A method of water purification includes mixing contaminated water with a zirconium dioxide (ZrO2) / calcium silicate (CaSiO3) / graphitic carbon nitride (g-C3N4) based nanocomposite material to form a reaction mixture, further exposing the resultant reaction mixture to light, and removing the nanocomposite material to form purified water. The nanocomposite material consists of spherical metal oxide nanoparticles including a ZrO2 phase and a CaSiO3 phase dispersed on a matrix of g-C3N4 nanosheets, where the spherical metal oxide nanoparticles have an average particle diameter in a range from 2-25 nanometer (nm), and the nanocomposite material has a band gap energy in a range from 1.5-4 electron volt (eV).

The invention discloses an integral active spectrum stabilization system and method of a desktop high-resolution X-ray emission spectrometer, and belongs to the field of precise spectrum analysis. The system comprises a single heat capacity main base which is integrally formed and internally provided with a temperature control flow channel and serves as a unified physical and thermal reference; an optical assembly directly rigidly mounted on the base; the module is used for supporting the base to actively isolate vibration; and the closed-loop feedback subsystem consists of a light beam position sensor, a micro-motion compensation mechanism and a controller. The method comprises the steps that base global heat balance and active vibration isolation are established; calibrating a light path and recording a zero position; monitoring the position of the reference beam in real time; and a micro-motion mechanism is driven to compensate the crystal angle according to the drift distance in a closed-loop manner, and a light path is dynamically locked. According to the invention, the problem of long-term drift of the desktop high-resolution X-ray spectrometer caused by module assembly and passive stability is solved, sub-electron volt-level long-term energy stability in a conventional laboratory environment is realized, and the measurement repeatability and reliability are remarkably improved.

The application discloses an ultralow-energy monochromatic electron beam generation and transmission device, and relates to the technical field of electron optical instruments, which comprises the following units arranged in sequence along an electron beam transmission path: an electron generation unit for generating an initial electron beam; an injection lens unit for receiving the initial electron beam generated by the electron generation unit; a monochromator unit having an inlet and an outlet and being used for energy screening of the electron beam from the injection lens unit to reduce energy spread thereof; and a deceleration and focusing lens unit for receiving the monochromatized electron beam output from the outlet of the monochromator unit. The device can output an ultralow-energy electron beam with a continuously adjustable energy of 0 eV to 5 eV through the cooperative work of the electron generation unit, the injection lens unit, the monochromator unit and the deceleration and focusing lens unit, and the energy spread is better than 90 meV, thereby improving beam monochromaticity and transmission efficiency.

Field effect transistor (FET) devices having a heterogeneous / segmented channel region and methods for fabricating the same are provided. In one example, a fin-like field effect transistor (FinFET) device includes a substrate, a fin structure disposed on the substrate, a segmented channel region formed in the fin structure, two source / drain (S / D) regions separated by the segmented channel region, and a gate structure wrapping around the segmented channel region. The segmented channel region further includes multiple channel segments sequentially arranged in the segmented channel region, and the multiple channel segments include a first channel segment and a second channel segment. The first channel segment includes a first channel barrier material dispersed therein and has a first energy barrier, and the first energy barrier is at least 0.1 electron volts (eV) in a carrier flow path between the two S / D regions when the FinFET device is not activated for operation.

A gate-all-around charge plasma-based dual-material gate stack nanowire field-effect transistor, consisting of: an undoped intrinsic silicon nanowire body whose thickness is smaller than the Debye length; a source electrode and a drain electrode generated in the undoped intrinsic silicon nanowire body by means of a charge plasma, wherein the source electrode and the drain electrode have metal contacts with a work function that is less than the sum of the electron affinity of silicon and half the band gap of silicon, and wherein the source electrode and the drain electrode are configured to generate an electron charge plasma in the source and drain regions of the silicon nanowire body; a gate structure surrounding the undoped intrinsic silicon nanowire body, wherein the gate structure comprises a dual-material gate containing a first gate metal material and a second gate metal material arranged along a length of the silicon nanowire body, and wherein the first gate metal material has a first work function and the second gate metal material has a second work function, the difference between the first and second work functions being 0.5 electron volts; and a gate dielectric layer arranged between the gate structure and the silicon nanowire body, wherein the gate dielectric layer comprises a gate stack structure containing a silicon dioxide layer and a layer of dielectric material with a high dielectric constant; the transistor is configured to provide improved analog performance with reduced short-channel effects and operates without chemical doping in the source and drain regions.

The method comprises the following steps: dissolving lead chloride, manganese chloride, hydrochloric acid and polyether amine D400 in N, N-dimethylformamide to form a polar precursor solution, mixing the polar precursor solution with an oleic acid / n-octane weak polar solvent containing cesium acetate, stirring for 1 hour at 20-30 DEG C and 400 r / min, centrifuging for 3-5 minutes at 8000-10000 r / min, and drying to obtain the manganese-doped flexible lead halide perovskite material. And washing with n-hexane for three times. The material is composed of an amorphous perovskite network and embedded nanocrystals with the average diameter of 6.8 nanometers, and has polymer-like viscoelasticity and 3D printing capacity; the photoluminescence quantum yield exceeds 50%, and the Stokes shift is gt; the X-ray excitation light yield is about 8.07 * 10 < 4 > photons / megaelectron volts, and the imaging resolution is 9.0 line pairs / mm. The material is still excellent in performance after being subjected to 300% stretching, 5000 times of bending circulation, air storage for nearly two months and 5 minutes of self-healing, and is suitable for flexible electronic devices, wearable X-ray detection equipment and complex three-dimensional common imaging systems.

An electroluminescent device includes a quantum dot layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit a first light, the quantum dot layer including first quantum dots, wherein the first quantum dots include a first semiconductor nanocrystal, wherein the electron transport layer includes zinc oxide nanoparticles, wherein the electroluminescent device further comprises a first layer between the quantum dot layer and the electron transport layer, the first layer including inorganic nanoparticles, wherein the inorganic nanoparticles has a different composition from the zinc oxide nanoparticles and the first quantum dots, and wherein the inorganic nanoparticles comprises a metal chalcogenide having a bandgap energy of greater than or equal to about 2.9 electron volts (eV) and less than or equal to about 10 eV.