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Complementary metal oxide image sensor and terminal

An image sensor, complementary metal technology, applied in image communication, TV, color TV components and other directions, can solve problems such as reducing full well capacity and increasing the range of detectable light intensity

Active Publication Date: 2021-03-05
GUANGDONG OPPO MOBILE TELECOMM CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present application provides a complementary metal oxide image sensor and terminal, which solves the problem that the full well capacity decreases when the size of the pixel unit decreases, thereby effectively improving the imaging quality and increasing the range of detectable light intensity

Method used

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  • Complementary metal oxide image sensor and terminal

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Embodiment Construction

[0043] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the specific embodiments described here are only used to explain the related application, not to limit the application. It should also be noted that, for the convenience of description, only the parts related to the relevant application are shown in the drawings.

[0044] In recent years, benefiting from the progress of the standard CMOS process and the continuous improvement of the CMOS manufacturing process, the CMOS image sensor has surpassed the charge-coupled device (Charge-coupled Device, CCD) image sensor and has become the mainstream of the solid-state image sensor. The rapid development of sensors.

[0045] The CMOS image sensor is composed of a pixel unit array, an analog front-end circuit, a digital-to-analog conversion unit and a timin...

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Abstract

The embodiment of the present application discloses a complementary metal oxide image sensor and terminal. The CIS includes a pixel unit, a filter unit, and a readout circuit. The pixel unit includes a first PD structure and a second PD structure; wherein, the first PD structure is close to The first size of the filter unit is greater than the second size of the first PD structure close to the readout circuit; the third size of the second PD structure close to the filter unit is smaller than the fourth size of the second PD structure close to the readout circuit; corresponding Specifically, the N-type region of the first PD structure is arranged in the first region corresponding to the first size; the N-type region of the second PD structure is arranged in the second region corresponding to the fourth size.

Description

technical field [0001] The embodiments of the present application relate to an image processing device, and in particular to a complementary metal oxide image sensor and a terminal. Background technique [0002] Complementary Metal Oxide Semiconductor (CMOS) is often used as a photosensitive element of digital imaging equipment. Among them, the complementary metal oxide image sensor (CMOS ImageSensor, CIS) is easy to integrate the system on chip because its manufacturing process is compatible with the signal processing chip and other manufacturing processes. It has occupied a dominant position in the field of image sensor applications. [0003] With the continuous improvement of CIS technology, the pixel size is getting smaller and smaller. However, with the continuous reduction of pixel size, the area of ​​a single pixel unit will also be gradually reduced. Correspondingly, the full well capacity of the pixel unit will be reduced, and then This results in a decrease in im...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/225H04N5/374H04N5/378
CPCH04N23/54H04N25/76H04N25/75
Inventor 杨鑫
Owner GUANGDONG OPPO MOBILE TELECOMM CORP LTD