MOS tube structure with electrostatic self-protection

A MOS tube and self-protection technology, applied in the field of semiconductor device design and manufacturing, can solve the problems of increasing cost and increasing tube area

Pending Publication Date: 2020-07-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, increasing L in the existing structure will increase the area of ​​the pipe and increase the cost

Method used

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  • MOS tube structure with electrostatic self-protection
  • MOS tube structure with electrostatic self-protection
  • MOS tube structure with electrostatic self-protection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Such as figure 2 As shown, it is a MOS tube structure with electrostatic self-protection provided by the present invention. The MOS tube is placed above the semiconductor substrate as a whole, and is a MOS tube with a larger overall size formed by a plurality of smaller-sized sub-MOS tubes. tubes, and the sub-MOS tubes are arranged in a multi-finger structure.

[0057] On the top view plane, the source region and the drain region of the MOS device are respectively located on both sides of the polysilicon gate, and the polysilicon gate is in the shape of a polysilicon line with a characteristic dimension width, and the polysilicon line is used as a multi-silicon gate. The gate of each sub-MOS transistor is also used as a wire connecting the gates of multiple sub-MOS transistors.

[0058] In the active area of ​​the entire MOS transistor, there are multiple polysilicon lines arranged in parallel. Except for the two outermost source active areas, the source active area a...

Embodiment 2

[0064] Such as image 3As shown, it is a MOS transistor structure with electrostatic self-protection provided by the present invention. In the entire active region of the MOS transistor structure, there are multiple polysilicon lines arranged in parallel, except for the two outermost active region active regions. In addition, the active area of ​​the source area and the active area of ​​the drain area in the middle area are shared by adjacent MOS transistors, that is, the active area of ​​the source area or the active area of ​​the drain area between every two adjacent polysilicon lines , are used by the two adjacent polysilicon lines to form MOS transistors respectively; there are multiple contact holes in the active area of ​​the source area and the active area of ​​the drain area to connect the active area of ​​the source area and the active area of ​​the drain area respectively lead out.

[0065] In the active region of the source region of the MOS transistor, there are c...

Embodiment 3

[0070] Such as Figure 4 As shown, it is a MOS tube structure with electrostatic self-protection provided by the present invention. The third embodiment is basically the same as the first embodiment, and the direction of the field oxygen isolation groove and the arrangement of the contact holes are the same, the difference is , in the source active area of ​​the third embodiment, except for the outermost two source active areas, the rest of the source active areas also maintain the same layout design as the drain active area:

[0071] In addition to the two outermost source active regions, in the source active region of the MOS transistor, there are two columns and multiple rows of source region active region contact holes; in the source region of the MOS transistor The active area also has a field oxygen isolation trench, and the contact holes in the active area of ​​the source area are arranged in two columns in the Y direction, and in the X direction are arranged in multipl...

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Abstract

The invention discloses an MOS tube structure with electrostatic self-protection. An active region of a source region or an active region of a drain region is divided into specific shapes which are staggered and occluded with each other through a field oxide isolation trench. A path direction from a grid electrode to a source region contact hole or from the grid electrode to a drain region activeregion contact hole is changed into a curve direction from a traditional straight line; effective paths from the grid electrode to the source region active region contact hole and the drain region active region contact hole are increased under the condition that the areas of the source region active region and the drain region active region are small; or the areas of the drain region active regionand the source region active region are reduced under the same effective path from the grid electrode to the source region active region contact hole and from the grid electrode to the drain region active region.

Description

technical field [0001] The invention relates to the field of design and manufacture of semiconductor devices, in particular to a MOS tube structure with electrostatic self-protection. Background technique [0002] Static electricity is an objective natural phenomenon, which can be produced in many ways, such as contact, friction, induction between electrical appliances, etc. Static electricity is characterized by long-term accumulation, high voltage, low power, small current and short action time. Static electricity causes serious harm in many fields. Friction electrification and human body static electricity are two major hazards in the electronics industry, which often cause unstable operation or even damage of electronic and electrical products. [0003] As the feature size of the semiconductor integrated circuit manufacturing process becomes smaller and smaller, the size of the chip unit is also smaller and smaller, and the antistatic ability of the chip becomes more a...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L27/02H01L27/088
CPCH01L27/0207H01L27/0296H01L27/088
Inventor苏庆
OwnerSHANGHAI HUAHONG GRACE SEMICON MFG CORP