Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flash memory programming failure processing method and system and storage medium

A programming failure, flash memory technology, applied in the direction of redundant code error detection, response error generation, etc., can solve problems such as programming failure, and achieve the effect of reducing data movement and reducing the probability of traffic congestion

Pending Publication Date: 2022-07-01
ALIBABA (CHINA) CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Flash memory is known to experience physical imperfections that cause programming to fail

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory programming failure processing method and system and storage medium
  • Flash memory programming failure processing method and system and storage medium
  • Flash memory programming failure processing method and system and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to make the objectives, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be clearly and completely described below with reference to the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0030] The technical solutions provided by the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0031] It should be noted that the same reference numerals refer to the same object in the following figures and examples, so once an object is defined in one figure...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a flash memory programming failure processing method and system and a storage medium. In the embodiment of the invention, when programming fails in the process of writing the to-be-written data into the flash memory, the to-be-written data continues to be written into the original physical address; counting the number of bits failed in programming; and when the number of the bits failed in programming is smaller than or equal to the set number threshold value, the data of the bits failed in programming is recovered by utilizing the data of the bits successfully programmed and a redundancy check algorithm adopted when the data to be written is stored in the flash memory, and a write command in an original write message queue does not need to be revoked, and a new physical address does not need to be redistributed, so that the writing efficiency is improved. The mapping relation between the logic address and the physical address of the to-be-written data can be kept unchanged, data movement of write operation processing when flash memory programming fails can be reduced, and the probability of flow congestion of a computing system can be reduced.

Description

technical field [0001] The present application relates to the technical field of data storage, and in particular, to a method, system and storage medium for processing a flash memory programming failure. Background technique [0002] The proliferation of the Internet and e-commerce has generated vast amounts of data. Numerous storage systems and servers have been created in the art to store and access data. A storage system or server may include volatile memory (eg, dynamic random access memory (DRAM)) and multiple storage drives (eg, solid state drives (SSD), etc.). The storage drive may include non-volatile memory (such as NAND flash or flash memory, etc.) for persistent storage. Storage in a server plays a key role in the performance and capacity of a storage system. [0003] Storage drives typically utilize internal data buffers as write caches to reduce write latency. When the host write command reaches the data buffer inside the storage drive, the storage drive imm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/10
CPCG06F11/1056G06F11/1064G06F11/1068
Inventor 李舒
Owner ALIBABA (CHINA) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com