Methods of forming fusible devices

a technology of fusible devices and components, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve problems such as economic undesirable, reducing and eliminating increasing the risk of defects in electronic elements,

Inactive Publication Date: 2006-11-23
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The DARC coating enables more efficient and controlled laser trimming with reduced energy usage, minimizing substrate damage and enhancing the reliability and uniformity of semiconductor products, thereby reducing semiconductor scrap and production costs.

Problems solved by technology

As the number of electronic elements fabricated on and within a semiconductor with integrated circuits continues to rise, problems of reducing and eliminating defects in the elements become more difficult to solve.
The reduced size makes the electronic elements increasingly susceptible to defects caused by material impurities during fabrication, however.
Scrapping or discarding an entire chip because of a finding of defective electronic elements is economically undesirable, particularly if only a small number of electronic elements are actually defective.
Relying upon zero defects in fabrication of integrated circuits is not a realistic option either.
These fuse openings frequently lower chip yields and circuit reliability by allowing contamination to penetrate from the openings to the device regions.
The pressure causes any overlying film to be blown off.

Method used

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  • Methods of forming fusible devices
  • Methods of forming fusible devices
  • Methods of forming fusible devices

Examples

Experimental program
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Embodiment Construction

[0021] In the following detailed description of the invention, reference is made to the accompanying drawings which form a part hereof, and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. In the drawings, like numerals describe substantially similar components throughout the several views. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the invention.

[0022] For purposes of this specification, the terms “chip”, “wafer” and “substrate” include any structure having an exposed surface of semiconductor material with which to form integrated circuit (IC) structures. These terms are also used to refer to semiconductor structures during processing and may include other layers that have been fabricated thereupon. The terms include doped and ...

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Abstract

The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer insulating element that overlays and encloses the heat conductive element and the absorption element.

Description

RELATED APPLICATIONS [0001] This application is a Divisional of U.S. Ser. No. 11 / 140,859 filed May 31, 2005, which is a Continuation of U.S. Ser. No. 10 / 200,413 filed Jul. 22, 2002, now issued as U.S. Pat. No. 6,900,515, which is a Divisional of U.S. Ser. No. 09 / 257,756 filed on Feb. 25, 1999, now issued as U.S. Pat. No. 6,423,582. All of these applications are incorporated herein by reference.FIELD OF THE INVENTION [0002] The present invention relates to a use of a deposited antireflective coating, DARC, to modulate the environmental conditions of laser fuse blows and to a laser fuse that comprises a DARC coating. BACKGROUND OF THE INVENTION [0003] As the number of electronic elements fabricated on and within a semiconductor with integrated circuits continues to rise, problems of reducing and eliminating defects in the elements become more difficult to solve. To increase semiconductor capacity, circuit designers have reduced the size of individual elements to maximize available spa...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L21/82H01L21/8222H01L23/525H01L29/00
CPCH01L23/5258H01L23/5256H01L2924/0002H01L2924/00
InventorFISCHER, MARKYIN, ZHIPINGGLASS, THOMAS R.PAREKH, KUNAL R.SANDHU, GURTEJ SINGH
OwnerMICRON TECH INC