Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor

a technology semiconductor devices, which is applied in the direction of semiconductor devices, electrical devices, transistors, etc., can solve the problems of poly doping affecting the work function of silicided metal gates is not without problems, and the problem of poly doping becomes a serious issu

Inactive Publication Date: 2007-03-22
TEXAS INSTR INC
View PDF11 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as device feature size continues to shrink, poly depletion becomes a serious issue when using polysilicon gate electrodes.
Furthermore, poly doping has been shown to affect the work function of the silicided metal gates.
The silicided metal gates are not without their problems.
One of the more significant problems associated with the silicided metal gates is attributed to the simultaneous formation of the silicided metal gate and the silicided source / drain regions.
Deep silicided source / drain regions are nonetheless undesireable.
The main drawback of this approach originates from the across-wafer non-uniformity inherently associated with polishing (such as dishing, etc.).
As a result, the height of the poly gate after polishing may suffer significant variation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor
  • Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor
  • Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Referring initially to FIG. 1, illustrated is a cross-sectional view of one embodiment of a semiconductor device 100 constructed according to the principles of the present invention. In the embodiment illustrated in FIG. 1, the semiconductor device 100 includes a substrate 110. Located within the substrate 110 in the embodiment of FIG. 1 is a well region 120. Additionally located over the substrate 110 and well region 120 is a gate structure 130.

[0028] The gate structure 130 illustrated in FIG. 1 includes a gate oxide 140 located over the substrate 110, as well as a fully silicided gate electrode 150 located over the gate oxide 140. The silicided gate electrode 150 may have a variety of thicknesses, nonetheless, a thickness ranging from about 50 nm to about 150 nm is exemplary. The silicided gate electrode 150, when constructed in accordance with the principles of the present invention, may comprise a number of different materials. For instance, in the illustrative embodimen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (100), among other possible elements, includes a silicided gate electrode (150) located over a substrate (110), the silicided gate electrode (150) having gate sidewall spacers (160) located on sidewalls thereof. The semiconductor device (100) further includes source / drain regions (170) located in the substrate (110) proximate the silicided gate electrode (150), and silicided source / drain regions (180) located in the source / drain regions (170) and at least partially under the gate sidewall spacers (160).

Description

[0001] This application is a divisional of application Ser. No. 10 / 808,168, filed Mar. 24, 2004.TECHNICAL FIELD OF THE INVENTION [0002] The present invention is directed, in general, to a semiconductor device and, more specifically, to a semiconductor device having a fully silicided gate electrode, a method of manufacture therefor, and an integrated circuit including the same. BACKGROUND OF THE INVENTION [0003] Metal gate electrodes are currently being investigated to replace polysilicon gate electrodes in today's ever shrinking and changing transistor devices. One of the principle reasons the industry is investigating replacing the polysilicon gate electrodes with metal gate electrodes is in order to solve problems of poly-depletion effects and boron penetration for future CMOS devices. Traditionally, a polysilicon gate electrode with an overlying silicide was used for the gate electrodes in CMOS devices. However, as device feature size continues to shrink, poly depletion becomes a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L29/76H01L29/94H01L31/00H01L27/108H01L31/119H01L21/28H01L21/336H01L21/8238H01L29/49H01L29/78
CPCH01L21/28097H01L21/823835H01L21/823864H01L29/7833H01L29/66507H01L29/6656H01L29/6659H01L29/4975
InventorBU, HAOWENLU, JIONG-PINGYU, SHAOFENGJIANG, PINGMONTGOMERY, CLINT
OwnerTEXAS INSTR INC