Semiconductor devices with a layer of material having a plurality of source/drain trenches

Abstract

One device disclosed herein includes an active region defined in a semiconductor substrate, a layer of material positioned above the semiconductor substrate, first and second laterally spaced-apart source / drain trenches defined in the layer of material above the active region, first and second conductive source / drain contact structures positioned within the first and second laterally spaced-apart source / drain trenches, respectively, a gate trench formed at least partially in the layer of material between the first and second laterally spaced-apart source / drain trenches in the layer of material, wherein portions of the layer of material remain positioned between the first and second laterally spaced-apart source / drain trenches and the gate trench, a gate structure positioned within the gate trench, and a gate cap layer positioned above the gate structure.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present disclosure generally relates to the fabrication of integrated circuits, and, more particularly, to various methods of forming a semiconductor device using a layer of material having a plurality of trenches formed therein and the resulting semiconductor device.[0003]2. Description of the Related Art[0004]In modern integrated circuits, such as microprocessors, storage devices and the like, a very large number of circuit elements, especially transistors, are provided and operated on a restricted chip area. In integrated circuits fabricated using metal-oxide-semiconductor (MOS) technology, field effect transistors (FETs) (both NMOS and PMOS transistors) are provided that are typically operated in a switching mode. That is, these transistor devices exhibit a highly conductive state (on-state) and a high impedance state (off-state). FETs may take a variety of forms and configurations. For example, among other conf...

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