A High Voltage Bidirectional Transient Voltage Suppressor

A transient voltage suppression, high voltage technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the SCR device performance per unit area is not significantly improved, transient electrical signal stress direction uncertainty, ESD protection and anti-wave The problem of poor surge function, etc., achieves the effect of extending the ESD current discharge path, extending the SCR current discharge path, and enhancing the ESD robustness.

CN108807374BActive Publication Date: 2020-07-24JIANGNAN UNIV
4 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2020-07-24

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a high-voltage bidirectional transient voltage suppressor and belongs to the fields of electrostatic discharge protection and surge resistance of an IC (integrated circuit). Thehigh-voltage bidirectional transient voltage suppressor can be used for improving system reliability of an on-chip IC and an electronic product and comprises a P substrate, an N type buried layer, aP well, a first N type middle doped area, a second N type middle doped area, a first N+ injection area, a first P+ injection area, a second P+ injection area, a third P+ injection area, a second N+ injection area and a metal wire. By introduction of the highly-doped P+ injection areas, adjustment for space between the two N type middle doped areas and design of sectional structure with center axissymmetry, an SCR current discharge path with strong anti-latch-up capacity can be formed under the action of forward and reverse electrical stress, and bidirectional ESD (electrostatic discharge) ortransient surge protection is realized.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the field of electrostatic discharge protection and anti-surge of integrated circuits, relates to an ESD protection or anti-surge device, in particular to a high-voltage bidirectional transient voltage suppressor, which can be used to improve the system reliability of on-chip ICs and electronic products . Background technique

[0002] Suppression of transient electrical signal interference, such as surge voltage or current, and transient signals such as electrostatic discharge (ESD), which affect the performance of integrated circuits (ICs) or electronic systems, is widely used in electronic engineering design and its applications. A technical challenge that circuit engineers cannot avoid. Usually, the action time of transient interference electrical signals is very short, but the instantaneous energy is large, and the peak voltage or current is large, which may easily cause voltage fluctuations in the power supply or control ...

Examples

Embodiment Construction

[0022] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:

[0023] The present invention designs a device by combining the characteristics of low reverse breakdown voltage of the highly doped implanted region, extended current path of the N-type medium doped region, strong ESD robustness of the SCR structure, and central axis symmetry of the device cross-sectional structure. High voltage bidirectional transient voltage suppressor. Under the action of forward and reverse electrical stress, the device of the invention can form an SCR current discharge path with strong anti-latching ability, and realize bidirectional ESD or transient surge protection.

[0024] A high-voltage bidirectional transient voltage suppressor proposed by the present invention, the device structure profile is as follows figure 1 As shown, it is characterized in that: the high-voltage bidirectional transient voltage suppressor i...