2results about How to "Clean and thorough" patented technology

The utility model discloses a turnover box / turnover basket double-channel four-side swinging spraying basket / tray washing machine which comprises a spraying basket / tray / rack and a spraying washing area of the spraying basket / tray / rack, and the spraying washing area is a four-side swinging dead-corner-free high-pressure spraying washing area. The upper, lower, left and right directions of a turnover box / turnover basket in the four-side swinging dead-corner-free high-pressure spraying cleaning area are each provided with a swing type spraying frame cleaning mechanism, each swing type spraying frame mechanism is provided with a swing type spraying frame and a swing rotation driving structure, and the swing type spraying frames are provided with a plurality of spraying pipes. A plurality of spray heads are distributed on each spray pipe, the swing type rotary driving structure is connected with the corresponding swing type spray frame in a driving manner to swing in the cleaning area, and drives the plurality of spray heads on the plurality of spray pipes to swing, spray and clean along with the swing, so that a four-side swing dead-corner-free high-pressure spray cleaning mechanism for the turnover box / turnover basket is formed. And the cleaning effect is good, cleaning dead corners can be thoroughly cleaned better, and the cleaning efficiency and quality are high.

This invention relates to the field of semiconductor technology and discloses a surface planarization method for epitaxial group III nitride materials based on a 3D mask substrate. The method includes using an etchant to achieve anisotropic etching rate differences between the c, a, and m faces of the group III nitride material, thereby performing surface planarization on the epitaxially grown group III nitride material layer. The surface planarization process is a solution etching process. This invention only requires placing the epitaxial group III nitride material on the 3D mask substrate in a mixed solution of potassium hydroxide and sodium chloride or a mixed solution of phosphoric acid and sodium chloride under specific conditions for chemical wet etching. Sodium chloride can increase the etching rate difference between the horizontal and vertical surfaces of the uneven epitaxial GaN layer, while potassium hydroxide or phosphoric acid solutions will etch the protruding parts of the uneven epitaxial group III nitride material layer surface, making the GaN thickness uniform throughout the entire epitaxial wafer, thus achieving global planarization.