Data scanning method and device for storage device

A scanning device and data scanning technology, applied in static memory, instruments, etc., to achieve the effect of using idle time

Active Publication Date: 2012-12-12
CHENGDU HUAWEI TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004]Because the ECC logic cannot actively correct the error data, especially for the data error accumulation caused by the NAND Flash bit flip, until the data is read If the error data exceeds the ECC error correction capability, even if the error is found, the data error cannot be corrected, which will affect the reliability of the data stored in the storage device

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  • Data scanning method and device for storage device
  • Data scanning method and device for storage device
  • Data scanning method and device for storage device

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Embodiment Construction

[0049] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0050] figure 1 A block diagram of a storage device according to an embodiment of the present invention is shown, referring to the accompanying drawings, including:

[0051] The storage device 01 includes a storage unit array 10, an interface 02 connecting the storage device 01 and a data processing system, and an ECC module 31, wherein the stor...

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Abstract

The embodiment of the invention discloses data scanning method and device for a storage device. The device is connected with an ECC (Error Correction Code) module for checking data. The method comprises the following steps of: reading data from a storage cell array based on a preset reference value when a scanning period comes; carrying out the error correction on the data; and rewriting the error-corrected data in the storage cell array when the error-corrected data is accumulated to a threshold value. By using the method, the error bits in the storage cell array can be processed in advance to lessen the diffusion of error bits in the storage cell array, thereby improving the reliability of the stored data in the storage device.

Description

technical field [0001] The invention relates to the technical field of semiconductor storage, in particular to a data scanning method and device for a storage device. [0002] Background technique [0003] NAND Flash (and non-flash memory) is widely used in large-capacity storage devices, for example, the common solid state disk (Solid State Disk, solid state disk) in the current market, in NAND Flash, the phenomenon of data bit reversal is a widespread problem . In data storage applications, when operating NAND Flash, the operation error of the NAND Flash device may be caused by factors such as voltage instability. These operating errors will lead to the generation of error bits. Since some storage devices provide write-back ( Copy-Back) function, resulting in error diffusion in NAND Flash. [0004] Error checking and correcting (Error checking and correcting, ECC) logic can correct error data within a certain range of error bits. When writing data to a NAND Flash page (p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/32G11C29/44
Inventor 段雨梅周丹
Owner CHENGDU HUAWEI TECH
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