Epitaxial structure body

A structure and epitaxy technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of contamination of the epitaxial growth surface of sapphire substrate, affecting the quality of the epitaxial structure, complex process, etc. simple effect

Active Publication Date: 2012-10-10
TSINGHUA UNIV +1
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AI Technical Summary

Problems solved by technology

However, in the prior art, microelectronic processes such as photolithography are usually used to form grooves on the surface of the sapphire substrate to form a non-flat epitaxial growth surface.
This method is not only complicated in process and high in cost, but also pollutes the epitaxial growth surface of the sapphire substrate, thereby affecting the quality of the epitaxial structure.

Method used

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preparation example Construction

[0028] see figure 1 , an embodiment of the present invention provides a method for preparing an epitaxial structure 10, which specifically includes the following steps:

[0029] S10: providing a substrate 100, and the substrate 100 has an epitaxial growth surface 101 supporting the growth of the first epitaxial layer 104;

[0030] S20: disposing a first carbon nanotube layer 102 on the epitaxial growth surface 101 of the substrate 100;

[0031] S30: growing a first epitaxial layer 104 on the epitaxial growth surface 101 of the substrate 100;

[0032] S40: disposing a second carbon nanotube layer 107 on the surface 106 of the first epitaxial layer 104 away from the substrate 100;

[0033] S50 : growing a second epitaxial layer 109 on the surface 106 of the first epitaxial layer 104 away from the substrate 100 .

[0034] In step S10 , the substrate 100 provides the epitaxial growth plane 101 of the first epitaxial layer 104 . The epitaxial growth surface 101 of the substrate...

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Abstract

The invention relates to an epitaxial structure body which comprises: a substrate with an epitaxial growth face; a first epitaxial layer formed on the epitaxial growth face of the substrate; a first carbon nanotube layer disposed between the epitaxial layer and the substrate; a second epitaxial layer formed on one side of the first epitaxial layer which is far from the substrate; and a second carbon nanotube layer disposed between the first epitaxial layer and the second epitaxial layer.

Description

technical field [0001] The present invention relates to an epitaxial structure. Background technique [0002] Epitaxial structures, especially heteroepitaxial structures, are one of the main materials for making semiconductor devices. For example, in recent years, the preparation of GaN epitaxial wafers for light-emitting diodes (LEDs) has become a research hotspot. [0003] The gallium nitride epitaxial wafer means that under certain conditions, the molecules of gallium nitride material are regularly arranged and directional grown on the sapphire substrate. However, the preparation of high-quality GaN epitaxial wafers has always been a difficult research point. Due to the difference in lattice constant and thermal expansion coefficient between gallium nitride and sapphire substrates, there are many dislocation defects in the epitaxial layer of gallium nitride. Moreover, there is a large stress between the GaN epitaxial layer and the sapphire substrate, and the greater st...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L29/06H01L33/20
Inventor魏洋范守善
OwnerTSINGHUA UNIV