Memory storage device, memory controller and data writing method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- PHISON ELECTRONICS
- Publication Date
- 2013-01-23
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Abstract
Description
technical field
[0001] The invention relates to a data writing method, in particular to a data writing method for strengthening the protection of specific data, a memory storage device and a memory controller for implementing the method. Background technique
[0002] Rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size and no mechanical structure, so it is widely used in various electronic devices. The rewritable non-volatile memory has multiple physical blocks, and each physical block has multiple physical pages. Wherein, the physical block is the smallest unit of data erasing, and the physical page is the smallest unit of data writing. The memory management circuit in the storage device converts the logical access address to be accessed by the host system into the corresponding logical page, and then accesses the physical page corresponding to the logical page.
[0003] Since the data sto...