Double electron beam Terahertz wave radiation source of cascade high-frequency structure

A high-frequency structure and dual-electron injection technology, which is applied in the direction of time-of-flight electron tubes, electron/ion guns and circuits of time-of-flight electron tubes, can solve adverse anti-interference and detection of harmful substances, and limit the power level of excitation sources , application restrictions and other issues, to achieve the effect of saving external signal sources, reducing interference, and reducing development costs

Active Publication Date: 2014-03-12
INST OF ELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0007] (1) For the THz oscillator radiation source, it can generate a large output power, but the frequency band is narrow, which is not conducive to the application of anti-interference and detection of harmful substances;
[0008] (2) For traveling wave tube amplifiers, power amplification and frequency band broadening can be achieved, but for the entire amplification system, an external excitation signal is required, and at the same time, under the current conditions, the power level of the excitation source is greatly limited, so that Applications such as ultra-wideband radar long-distance detection and high-resolution imaging radar have been greatly restricted

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  • Double electron beam Terahertz wave radiation source of cascade high-frequency structure
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  • Double electron beam Terahertz wave radiation source of cascade high-frequency structure

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[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0031] It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. In addition, the directional terms mentioned in the following embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only re...

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Abstract

The invention provides a double electron beam THz wave radiation source of a cascade high-frequency structure. The double electron beam THz wave radiation source uses a backward wave oscillator to generate THz signals as drive signals of a travelling wave amplifier. In a same THz wave radiation source, high-power THz waves are generated and at the same time the power amplification and band spread of the THz waves are realized, thereby being beneficial for applying the THz wave radiation source in anti-interference, harmful substance detection, ultra wide band radar long-range detection and high resolution imaging radar aspects, etc.

Description

technical field [0001] The invention relates to the technical field of vacuum electronic devices, in particular to a double-electron beam terahertz wave radiation source with a cascaded high-frequency structure. Background technique [0002] Terahertz (Terahertz, THz) wave is the frequency at 0.1THz-10THz (1THz=10 12 Hz) between the relatively mature microwave and millimeter waves and far-infrared light waves. Its unique wavelength characteristics make this wave band ideal for measuring optical properties of materials, biomedical imaging, surface chemistry, and strong-field condensed matter. Research and other fields have extensive application value, and at the same time, there are important application prospects in radar detection and secure communication in the military field. The important application value of THz waves in the military and civilian fields has attracted the attention of governments, especially the military, and invested a lot of resources in the developme...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J25/42H01J23/06H01J23/087
Inventor 刘文鑫张兆传王勇赵超
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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