Thin film transistor and manufacturing method therefor
A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., to achieve the effect of reducing contact resistance
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experiment example 1
[0042] A thin film transistor is manufactured according to the steps in the above embodiments, and ITO is used as the metal oxide conductive layer of the source S and the drain D. The thickness of the ITO is 500 angstroms, and the thickness of the metal layer of the source S and the drain D is 2000 angstroms. Before coating the solution-state metal-semiconductor material, measure the resistance of the S / D wire, which is the resistance of the S / D wire before sintering in Table 1. Next, after coating the solution-state metal-semiconductor material and performing one sintering at 370° C., the resistance of the S / D wire is measured again, which is the resistance of the S / D wire after sintering in Table 1.
experiment example 2
[0044] Similar to Experimental Example 1, the thickness of the metal layer of the source S and the drain D is 2000 angstroms, and the difference is that the thickness of ITO is 750 angstroms. Likewise, the resistance of the S / D wires was measured before coating the solution-state metal-semiconductor material. Next, after applying the solution-state metal-semiconductor material and performing sintering at 370° C. twice, the resistance of the S / D wire was measured again, and the results are shown in Table 1.
experiment example 3
[0046] Similar to Experimental Example 1, the thickness of the metal layer of the source S and the drain D is 2000 angstroms, and the difference is that the thickness of ITO is 1300 angstroms. Likewise, the resistance of the S / D wires was measured before coating the solution-state metal-semiconductor material. Next, after coating the solution-state metal-semiconductor material and firing once at 370° C., the resistance of the S / D wire was measured again, and the results are shown in Table 1.
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