Preparation method of tellurium copper compound nanometer material

A technology of nanomaterials and compounds, applied in the field of electrochemistry, can solve the problems that the amount of tellurium and copper cannot be accurately controlled, and the molar ratio of compounds is not easy to control, so as to achieve the effects of improving purity, reducing energy loss, and avoiding loss

Active Publication Date: 2017-04-19
XIAN JIAOTONG LIVERPOOL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the amount of evaporated tellurium and copper cannot be precisely controlled, the molar ratio of the compound obtained by this method is not easy to control

Method used

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  • Preparation method of tellurium copper compound nanometer material
  • Preparation method of tellurium copper compound nanometer material
  • Preparation method of tellurium copper compound nanometer material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036]Ordinary quartz glass sheet is selected as the substrate, copper powder is evenly sprinkled on the quartz sheet, and put into the tube furnace. Set the target temperature to 950°C and bake for 30 minutes. A protective atmosphere is provided by blowing argon gas at a flow rate of 500 sccm. After reaching the set temperature, cool at a rate of 20°C / min. After the copper powder is cooled to room temperature, take it out, put it into the etchant and corrode it for 5s. After the copper powder was filtered out with filter paper, it was washed three times repeatedly with 18MΩ·cm deionized water. The composition ratio of the etchant is: H3PO4:CH3COOH:HNO3=50:28:22. Then put it into the replenishing solution to corrode for 3s. After the copper powder was filtered out with filter paper, it was washed three times repeatedly with 18MΩ·cm deionized water. The composition ratio of the replenishing solution is: NH3OH: H2O2: CH3CH2OH (anhydrous): H2O (DI) = 5:15:50:50. The obtaine...

Embodiment 2

[0038] The copper powder is placed in a crucible and placed in a tube furnace. The target temperature set is 850°C and baked for 1 hour. Nitrogen gas was supplied to provide a protective atmosphere, and the flow rate of nitrogen gas was 1 LPM. After reaching the set temperature, cool at a rate of 20°C / min. Continue to pass nitrogen gas for protection. After the copper powder is cooled to room temperature, take it out and put it into the etchant for 10 seconds. After the copper powder was filtered out with filter paper, it was washed three times repeatedly with 18MΩ·cm deionized water. The composition ratio of the etchant is: H3PO4:CH3COOH:HNO3=50:28:22. Then put it into the replenishing solution to corrode for 5s. After the copper powder was filtered out with filter paper, it was washed three times repeatedly with 18MΩ·cm deionized water. The composition ratio of the replenishing solution is: NH3OH: H2O2: CH3CH2OH (anhydrous): H2O (DI) = 15:5:50:50. The obtained copper p...

Embodiment 3

[0040] Choose ordinary mica sheet as the substrate, sprinkle copper powder evenly on the mica sheet, and put it into the tube furnace. The set target temperature is 1000°C and baked for 30 minutes. Introduce argon gas to provide a protective atmosphere. During the heating and cooling process, the flow rate of argon gas is 100 sccm, and the flow rate of argon gas is 1 LPM at the highest temperature. After baking for 30 minutes, it is then cooled at a rate of 20°C / min. After the copper powder is cooled to room temperature, take it out and put it into the etchant for 3s corrosion. After the copper powder was filtered out with filter paper, it was washed three times repeatedly with 18MΩ·cm deionized water. The composition ratio of the corrosive agent is: H 3 PO 4 :CH 3 COOH: HNO 3 =50:28:22. Then put it into the replenishing solution to corrode for 10s. After the copper powder was filtered out with filter paper, it was washed three times repeatedly with 18MΩ·cm deionized w...

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Abstract

The invention discloses a preparation method of a tellurium copper compound nano material and relates to a heavily doped layer in contact with the back of a thin film solar cell. The preparation method of the tellurium copper compound nano material comprises the following steps: firstly putting copper powder into a tubular furnace for heating and baking, then adding the copper powder into an organic acid-inorganic acid mixed solution for corroding, washing the copper powder for a plurality of times by using deionized water, putting the copper powder into a plasma washing machine to process the copper powder for a period of time, and finally mixing the processed copper powder and tellurium powder according to a certain chemical ratio, putting a mixture in a ball milling tank of a planetary ball mill to seal, grinding and heating the material for a plurality of times, gradually increasing the heating temperature of each cycle, and finally preparing the tellurium copper compound nano powder with adjustable chemical ratio. The CuxTe nano powder can be used for greatly improving the purity; the chemical ratio of the CuxTe nano powder is fixed; the material can be applied to back contact electrodes of cadmium telluride thin film solar cells; and meanwhile, the overall preparation process is sealed, so that the pollution to the environment and operators can be avoided.

Description

technical field [0001] The invention relates to the technical field of electrochemistry, in particular to a preparation method of a tellurium-copper compound nanometer material. Background technique [0002] CdTe solar cell is an important thin film solar cell. Such as figure 1 As shown, a typical CdTe solar cell deposits a layer of n-type doped cadmium sulfide (CdS) on a glass substrate deposited with a transparent conductive oxide (TCO) film as a window layer, and p-type doped The CdTe layer is used as the absorbing layer. After annealing, the p-type semiconductor and n-type semiconductor are combined to form a p-n junction, and finally a layer of metal film is deposited. The whole solar cell uses TCO film as the front electrode and metal film as the back electrode. However, cadmium telluride has a very high work function (~5.5eV), so it is difficult for CdTe films to form ohmic contacts with most metals. The Schottky barrier formed between CdTe and the metal will incr...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C01B19/04B82Y30/00
CPCC01B19/04Y02P20/133
Inventor吴京锦赵策洲
OwnerXIAN JIAOTONG LIVERPOOL UNIV