Bilayer graph based optical proximity correction method
A technology of optical proximity effect and graphics, which is applied in the direction of optics, photographic process of patterned surface, and originals for photomechanical processing, etc. It can solve problems such as circuit failure, affecting device performance or circuit characteristics, and affecting product yield. , to achieve the effect of improving process stability
Inactive Publication Date: 2015-09-09
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
[0005] In the advanced process, some key layers such as the front gate layer and the back metal layer, the design of the pattern on the upper layer may cause the pattern size of the layer pattern after the actual exposure and development to not meet the design expectation, thus affecting the performance of the device or circuit characteristics
Take the latter metal layer and the upper connection hole as an example. In the photolithography process, it is often ignored that the result of actual exposure and development may cause insufficient envelopment of the upper connection hole. Please refer to figure 1 and figure 2 , a structural schematic diagram of the metal layer reducing the surrounding degree of the connection hole in the existing OPC method, which includes the connection hole 10 and the metal layer 20, and the metal layer 20 reduces the surrounding and blocking phenomenon of the connection hole 10, thereby forming a process weakness, In severe cases, it may even lead to line failure, greatly affecting the product yield
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[0026] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe the implementation of the present invention in detail in conjunction with the accompanying drawings. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0027] The above and other technical features and beneficial effects will be combined with the embodiments and the accompanying Figure 3-6 The method for correcting the optical proximity effect based on the double-layer pattern of the present invention will be described in detail. image...
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The invention discloses a bilayer graph based optical proximity correction method. The bilayer graph based optical proximity correction method includes steps of firstly providing original layout data; optionally adjusting target size of the original layout data; judging relation between the very layer of graphs and the upper layer of graphs and adjusting size of the target graph; finally integrating the above results and outputting the final OPC (optical proximity correction) data based on OPC of the model. The upper layer of graphs is introduced as correction reference during adjustment of OPC target size. When the very layer of graphs has an effect on the upper layer of graphs due to size adjustment, and target size is adjusted and compensated so as to meet requirement of surrounding degree of the metal layer to upper holes; compared with a conventional OPC method, surrounding degree of the metal layer to the upper holes is increased by 5-20%, and technical stability is greatly improved.
Description
technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and relates to a method for correcting optical proximity effects based on double-layer graphics. Background technique [0002] In the semiconductor manufacturing process, in order to transfer the circuit pattern of an integrated circuit (IC, Integrated Circuit) to a semiconductor chip, it is necessary to design the circuit pattern of the integrated circuit as a mask pattern, and then remove the mask pattern from the surface of the mask transferred to a semiconductor chip. [0003] However, with the continuous shrinking of the feature size of integrated circuits and the influence of the resolution limit of the exposure machine, the optical proximity effect (OPE, Optical Proximity Effect). For example, Right-angled corner rounded (Right-angled corner rounded), Line End Shortened (Line End Shortened), and Line Width Increase / Decrease (Line WidthIncrease / Decre...
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IPC IPC(8): G03F1/36
CPCG03F1/36
Inventor陈翰魏芳张旭昇朱骏吕煜坤
OwnerSHANGHAI HUALI MICROELECTRONICS CORP