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Carbon-based material resistive memory unit with unilateral resistive characteristic and preparation method thereof

A carbon-based material and resistive storage technology, which is applied in the field of electrochemical technology and microelectronics, can solve problems such as research that has not been reported in the literature, and achieve the effects of simple structure and preparation process, low cost, and low heat loss

Inactive Publication Date: 2018-08-17
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no literature report on the research on magnetic element-doped amorphous carbon film resistive memory cells.

Method used

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  • Carbon-based material resistive memory unit with unilateral resistive characteristic and preparation method thereof
  • Carbon-based material resistive memory unit with unilateral resistive characteristic and preparation method thereof
  • Carbon-based material resistive memory unit with unilateral resistive characteristic and preparation method thereof

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Embodiment Construction

[0065] Preferred embodiments of the present invention are described in detail as follows:

[0066] In this example, see figure 1 and image 3 , a carbon-based resistive memory cell with unilateral resistive characteristics, which consists of a substrate layer 1, a resistive layer 2 and an electrode layer 3 in sequence to form a sandwich structure, and the resistive layer 2 is located between the bottom layer 1 and the electrode layer 3, The substrate layer 1 is made of SiO 2 / Si composite material, the electrode layer 3 is composed of two patterned planar electrodes, the cathode film and the anode film, forming a planar electrode structure, the electrode layer 3 is an Au electrode layer, the thickness of the electrode layer 3 is 200 nm, and the resistive layer 2 is an amorphous carbon film composite resistive material film doped with a magnetic element material, the thickness of the resistive layer 2 is 100nm, and in the resistive layer 2, the doping mass of the magnetic ele...

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Abstract

The invention discloses a carbon-based material resistive memory unit with unilateral resistance-switching characteristics and a preparation method thereof. The carbon-based material resistive memory unit of the invention includes a substrate layer, a resistive layer on the substrate layer, a An electrode layer comprising two planar electrodes on the resistive layer, the resistive layer is an amorphous carbon film resistive layer doped with magnetic elements, wherein the doping mass ratio of the magnetic elements is 5-20 wt%. The invention uses a novel electrode structure to make the resistance change phenomenon only occur at negative voltage, and the unilateral resistance change phenomenon makes the heat loss of the resistance change storage unit smaller, and improves the reading times of the resistance change storage unit. In the present invention, by doping magnetic elements in amorphous carbon, the doped amorphous carbon thin film resistive layer has certain magnetic properties while having stable resistive properties; the resistive window is >10, and the storage time is >1×105 s; simple structure and low cost.

Description

technical field [0001] The invention relates to a nonvolatile memory and a preparation method thereof, a resistive variable memory and a preparation method thereof, which are applied in the fields of electrochemical technology and microelectronic technology. Background technique [0002] Currently, silicon-based flash memory devices account for half of the non-volatile memory (NVM) market due to their high density and low cost. With the development and popularization of various portable digital products such as mobile storage devices, mobile phone communication devices, and digital cameras, the market demand for non-volatile storage has further increased. In addition to high density and low cost, it should also have low power consumption, read It has the characteristics of fast writing speed, stable performance and long storage time. However, the scaling feature of flash memory, that is, to further increase the density of flash memory, is approaching its physical limit. The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/8845H10N70/026H10N70/041H10N70/011
Inventor 汪琳周家伟张电季欢欢杨瑾张淑玮任兵王林军
Owner SHANGHAI UNIV
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