Carbon-based material resistance storage unit having unilateral resistance characteristic and preparation method thereof

A carbon-based material and resistive storage technology, which is applied in the field of electrochemical technology and microelectronics, can solve problems such as research that has not been reported in the literature, and achieve the effects of simple structure and preparation process, increased reading times, and low cost

Inactive Publication Date: 2016-07-06
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no literature report on the research on magnetic element-doped amorphous carbon film resistive memory cells.

Method used

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  • Carbon-based material resistance storage unit having unilateral resistance characteristic and preparation method thereof
  • Carbon-based material resistance storage unit having unilateral resistance characteristic and preparation method thereof
  • Carbon-based material resistance storage unit having unilateral resistance characteristic and preparation method thereof

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Embodiment Construction

[0065] Preferred embodiments of the present invention are described in detail as follows:

[0066] In this example, see figure 1 and image 3 , a carbon-based resistive memory cell with unilateral resistive characteristics, which consists of a substrate layer 1, a resistive layer 2 and an electrode layer 3 in sequence to form a sandwich structure, and the resistive layer 2 is located between the bottom layer 1 and the electrode layer 3, The substrate layer 1 is made of SiO 2 / Si composite material, the electrode layer 3 is composed of two patterned planar electrodes, the cathode film and the anode film, forming a planar electrode structure, the electrode layer 3 is an Au electrode layer, the thickness of the electrode layer 3 is 200nm, and the resistive layer 2 It is an amorphous carbon thin film composite resistive material film doped with magnetic element materials. The thickness of the resistive layer 2 is 100nm. In the resistive layer 2, the doping mass of the magnetic e...

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Abstract

The invention discloses a carbon-based material resistance storage unit having unilateral resistance characteristic and a preparation method thereof. The carbon-based material resistance storage unit comprises a substrate layer, a resistance layer and an electrode layer, wherein the resistance layer is arranged on the substrate layer, the electrode layer is arranged on the resistance layer and comprises two planar electrodes, the resistance layer is an amorphous carbon thin film resistance layer doped with a magnetic element, and the doping mass ratio of the magnetic element is 5-20%. A resistance phenomenon is only generated in a negative voltage by a novel electrode structure, the heat loss of the resistance storage unit is lower due to a unilateral resistance phenomenon, and the reading frequency of the resistance storage unit is increased. By doping the magnetic element to amorphous carbon, the doped amorphous carbon thin film resistance layer has stable resistance characteristic and also has certain magnetic characteristics, a resistance window is larger than 10, and the storage time is large than 1*10<5> seconds; and the carbon-based material resistance storage unit is simple in structure and low in cost.

Description

technical field [0001] The invention relates to a nonvolatile memory and a preparation method thereof, a resistive variable memory and a preparation method thereof, which are applied in the fields of electrochemical technology and microelectronic technology. Background technique [0002] Currently, silicon-based flash memory devices account for half of the non-volatile memory (NVM) market due to their high density and low cost. With the development and popularization of various portable digital products such as mobile storage devices, mobile phone communication devices, and digital cameras, the market demand for non-volatile storage has further increased. In addition to high density and low cost, it should also have low power consumption, read It has the characteristics of fast writing speed, stable performance and long storage time. However, the scaling feature of flash memory, that is, to further increase the density of flash memory, is approaching its physical limit. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/8845H10N70/026H10N70/041H10N70/011
Inventor 汪琳周家伟张电季欢欢杨瑾张淑玮任兵王林军
Owner SHANGHAI UNIV
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