Groove structure on silicon carbide substrate and manufacturing method thereof

Abstract

A groove structure on a silicon carbide substrate and a manufacturing method thereof. The manufacturing method includes sequentially providing a silicon carbide substrate, forming a protective layer on the silicon carbide substrate, forming a barrier layer on the protective layer, patterning the barrier layer, the protective layer, and Form the opening, pattern the silicon carbide substrate for the hard mask using the patterned barrier layer to form trenches, remove the patterned barrier layer, perform a high temperature tempering process to form the arc-shaped trench bottom, and remove the protection Floor.

Description

technical field [0001] The invention relates to a groove structure on a silicon carbide substrate and a manufacturing method thereof, in particular to a groove structure with an arc-shaped groove bottom on a silicon carbide substrate and a manufacturing method thereof. Background technique [0002] Silicon carbide materials have the characteristics of wide band gap, high thermal conductivity, and low thermal expansion rate. As a semiconductor material with physical properties that supplement silicon, it is used in high-frequency, high-power devices, and power devices. [0003] In the modern era of high-density integration in semiconductor devices, more dense and fine pattern processing is required. Therefore, the trench process of silicon carbide materials is usually processed by dry etching. Although dry etching is easy to obtain high aspect ratio However, the arc-shaped groove bottom cannot be produced, so it is usually tempered in an inert gas environment after etching to...

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