Semiconductor device, manufacturing method thereof and electronic device comprising device

Abstract

The invention relates to a semiconductor device, a manufacturing method thereof and an electronic device comprising the device. According to an embodiment, the semiconductor device may include a substrate, a first source / drain layer, a channel layer, a second source / drain layer and a gate stack, wherein the first source / drain layer, the channel layer and the second source / drain layer are sequentially stacked on the substrate, the second source / drain layer comprises a first semiconductor material having stress, and the gate stack is formed around the periphery of the channel layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a vertical type semiconductor device, a method of manufacturing the same, and an electronic device including such a semiconductor device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. Contents of the invention [0003] In view of this, it is an object of the present disclosure to provide, at least in part, a vertical type semiconductor device capable of providing ...

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Problems solved by technology

Due to this arrangement, horizontal type devices are not easy to further shrink

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