Thin film transistor, manufacturing method thereof, array substrate and display device

A technology of thin film transistors and conductorization, which is applied in the display field and can solve problems such as low product yield and conductorization

Active Publication Date: 2022-06-07
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the current thin film transistors, due to the limitation of the manufacturing process, the design of the channel region is easy to make the channel region of the thin film transistor conductive, and the product yield is low, which limits its application.

Method used

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  • Thin film transistor, manufacturing method thereof, array substrate and display device
  • Thin film transistor, manufacturing method thereof, array substrate and display device
  • Thin film transistor, manufacturing method thereof, array substrate and display device

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Embodiment Construction

[0023] Embodiments of the present invention are described in detail below. The embodiments described below are exemplary, only for explaining the present invention, and should not be construed as limiting the present invention. If no specific technique or condition is indicated in the examples, the technique or condition described in the literature in the field or the product specification is used. The reagents or instruments used without the manufacturer's indication are conventional products that can be obtained from the market.

[0024] The present invention is accomplished based on the following knowledge and findings of the inventors:

[0025] After extensive research, the inventor found that the existing top-gate thin film transistor (wherein, the specific structure of the active layer in the top-gate thin film transistor can refer to figure 1 ), when conducting the conducting treatment on the first conducting region 120 and the second conducting region 130, due to the...

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Abstract

The invention provides a thin film transistor, a manufacturing method thereof, an array substrate and a display device. Wherein, the active layer of the thin film transistor comprises a channel region, a first conductorized region and a second conductorized region, and the channel region is arranged between the first conductorized region and the second conductorized region, wherein the channel region comprises Opposite the first side and the second side, the first side is in contact with the third side of the first conductorization region, the second side is in contact with the fourth side of the second conductorization region, and the length of the first side is greater than the length of the first conductorization region The length of the three sides. The inventors have found that the thin film transistor has a simple structure, is easy to implement, has a high yield rate, and has a relatively uniform width of the channel region along the direction of the first side, so that the threshold voltage of the thin film transistor is relatively uniform, and the channel region is almost inert. The phenomenon of conductorization occurs.

Description

technical field [0001] The present invention relates to the field of display technology, and in particular, to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. Background technique [0002] Thin film transistors have been widely used due to their advantages of simple fabrication process and small parasitic capacitance between the gate and the source and drain. However, in the current thin film transistor, due to the limitation of the manufacturing process, the design of the channel region of the thin film transistor can easily lead to the phenomenon of conduction in the channel region of the thin film transistor, and the product yield is low, thereby limiting its application. [0003] Therefore, the current thin film transistors still need to be improved. SUMMARY OF THE INVENTION [0004] The present invention aims to solve one of the technical problems in the related art at least to a certain extent. Therefore, an objec...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L29/786H01L21/336H01L29/06H01L27/12
CPCH01L27/1214H01L29/0603H01L29/0684H01L29/66742H01L29/786H01L29/78618H01L27/1288H01L29/78696
Inventor苏同上王东方王庆贺闫梁臣
OwnerBOE TECH GRP CO LTD