A broadband photodetector based on a Schottky barrier

A photodetector and Schottky potential technology, applied in the field of photodetectors, can solve the problem of photothermal detectors being unable to detect light, and achieve the effect of simple structure and good absorption characteristics

Inactive Publication Date: 2019-01-04
中山科立特光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above problems, the purpose of the present invention is to solve the problem that existing photothermal detectors cannot detect light of a wider frequency band

Method used

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  • A broadband photodetector based on a Schottky barrier
  • A broadband photodetector based on a Schottky barrier
  • A broadband photodetector based on a Schottky barrier

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Embodiment 1

[0022] In order to solve the problem that the existing photothermal detector cannot detect light with a wider frequency band. The present invention provides a figure 1 The shown wide-band photodetector based on Schottky barrier includes a substrate layer 1, which mainly plays a supporting role, and the substrate layer 1 can be made of silicon dioxide, quartz, glass, etc.; A first electrode layer 2 is arranged above the bottom layer 1, an organic material 3 is arranged above the first electrode layer 2, and a plurality of periodically distributed holes 4 are arranged on the upper surface of the organic material 3, and the organic material 3 The upper surface is also covered with a metal film 5; a Schottky barrier is formed between the first electrode layer 2, the metal film 5 and the organic material 3. At the same time, when the first electrode layer 2 and the metal film 5 are used in practice, They are also connected to the external power line to detect the voltage change at...

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Abstract

The invention relates to a wide-band photodetector based on Schottky barrier, comprising a substrate layer, wherein a first electrode layer is arranged above the substrate layer, an organic material is arranged above the first electrode layer, a plurality of periodically distributed holes are arranged on the upper surface of the organic material, and the upper surface of the organic material is also covered with a metal film; The Schottky barrier based wide-band photodetector solves the problem that the prior photothermal detectors can not detect light in a wide-band, the Schottky junction isformed by an organic substance and a metal, the Schottky junction is influenced by incident light, and the change of the Schottky barrier is detected so as to reflect the characteristics of incident light; The wide-band photodetector provided by the invention is provided with deep holes on the organic material, which can have good absorption characteristics for incident light in a wider frequencyband, thereby influencing carriers inside the organic material, and changing the Schottky barrier of the Schottky junction formed by the Schottky junction.

Description

technical field [0001] The invention relates to the technical field of photodetectors, in particular to a Schottky barrier-based broadband photodetector. Background technique [0002] The physical effects of photodetectors are usually divided into photon effects and photothermal effects, and the corresponding detectors are called photon detectors and photothermal detectors, respectively. The common feature of various photon-type detectors is the use of semiconductor energy band materials. The photon energy has a direct effect on the generation of photoelectrons in the detection material. Therefore, photon-type detectors have a cut-off response frequency or wavelength, and the spectral response is limited to a certain band. Therefore Different material systems determine that detectors have different response wavelength ranges, which are generally difficult to use for wide-spectrum or multi-spectrum detection. For the photothermal detector, after absorbing the light radiation...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L31/0232H01L31/108G01J1/42
CPCH01L31/108G01J1/42H01L31/02327
Inventor不公告发明人
Owner中山科立特光电科技有限公司